017250 Search Results

TLR4182

Abstract: TLR2 TLR4
Contextual Info: TOSHIBA {DISCRETE/OPTO} "T í 9097250 TOSHIBA DISCRETE/OPTO m T | ^017250 99D 17256 OD 1 7 5 5 b 7 DT-M'l'-SS TLR2 I57, TLR4 I52, TLR2 I87, TLR4 I82 RED COLOR 4 D IG ITS L E D D ISP LA Y • Clock display for oultlplex drive operation and available both polarity

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D TO S H IB A F IE L D E F F E C T TR A N S IS TO R SILICON N C H A N N EL MOS T Y P E (tt - • ^017250 □DlT'ibfl 1 «TO S H -YTFP151 MOSI) ' P i - ß INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 ÏT TOSHIBA dF | ^017250 □□□□45b DISC R ETE/O PTO 39C 00426 T -3 i~ /7 O UHF~ S '' X K o ¡a f fi * * v f - v r f à O U H F ~ S Band Low N o i s e Amp l i 1 e r App 1 i c a t i one O Hi gh Sp e e d S w i t c h i n g A p p l i c a t i o n s

OPTO 817 C

Abstract: 0817B opto 817 817 OPTO
Contextual Info: TOSHIBA {DISCRET E/OP TO 3- Sb 9097250 T O S H IB A i Ê| ^017250 0DQñl74 4 ‘j o C 0 817 '+ D IS C R E T E /O PT O ) T - 74- 09-01 TOSHIBA RF POWER AMPLIFIER MODULE 800MHE UHF POWER AMPLIFIER MODULE <FM) Unit in m m 6 6.0 FEATURES: -&ÜQ- . Output Power

Contextual Info: PHOTO RELAY TLP595A TLP595A TELECOM M UNICATION DATA ACQUISITION M EASUREM ENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

Contextual Info: TOSHIBA { DI SC RE TE/OPTO} Tí 99D 16737 9 097250 TOSH I BA <DISCRETE/OPTO> ¿foSTulli, DE^I T D ci72SD GGlb737 7 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 6 7 h T E C H N IC A L DA TA SILICON N CHANN EL MOS TYPE 7T-M0S I TENTATIVE INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz

FAZ-C4 equivalent

Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
Contextual Info: 12/0 Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2004/2005 For Immediate Delivery call KMParts.com at 866 595-9616 Overview 12/1 Miniature circuit-breakers MCB enclosures, fuse enclosures

2SK941

Abstract: transistor 2SK941 za sot89 d3s diode
Contextual Info: T O S H IB A 2SK941 TGTTSSD 0Q2327cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: TOSHIBA J {DISCRETE/OPTO} 9097250 TOSHIBA tfoiìììbu m D eT | T O T 75-50 9 0 D 16270 <DISCRETE/OPTO SEMICONDUCTOR DDlti57D D T -3 3 - 3 5 TOSHIBA GTR MODULE MG 10 0H 2C K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power • p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

ihp 1c manual

Abstract: Nsx160b DC 24V double POLE MCB Schneider IC60N C CURVE A9C62216 schneider 15336 SCHNEIDER MCB
Contextual Info: Acti 9 Advanced Communication Technology that Inspires…… Leading Future. >Innovative >Efficient >Reliable About Schneider Electric About Schneider Electric As a global specialist in energy management, Schneider Electric offers integrated solutions across

um1233

Abstract: HONEYWELL MODULATOR MOTOR RS7660 siemens servo motor connector tms 1601 Burr Brown PWR 74 ORP 12 SIMATIC S5-100u programming cable 014374 SN 576B
Contextual Info: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.

Contextual Info: PRELIMINARY JS8905-AS FEATURES: ULTRA LOW NOISE FIGURE 0.9 dB at f = 18 GHz 1.4 dB a t f = 26GHz • 0.25 Aim GATE LENGTH SUPER HIGH ASSOCIATED GAIN 10 dB at f = 18 GHz 7 dB at f = 26 GHz ■ T-SHAPED GATE HIGH MAXIMUM AVAILABLE GAIN 1 2 d B a tf = 18 GHz

TCD5241BD

Abstract: TCD5240D
Contextual Info: TCD6220AF TCD5241BD, TCD5240D, TCD5251BD, TCD5250D TIMING PULSE GENERATING IC The CMOS LSI of TC6220AF was developed to drive thè TCD5241BD, TCD5251BD, TCD5240D and TCD5250D. The TC6220AF can be combined with a vertical clock driver to constitute the CCD area image sensor driving

2N3904

Abstract: 2N3906 2N3906 JEDEC
Contextual Info: 4SE D • =10=17250 0017746 IT O S H b TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL T Y P E PCT PROCESS ~> TOSHIBA ' T ■i (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV~“50nA(Max.)» lBEV=50nA(Max.)

FAZ-2-C16

Abstract: REG-sd230 moeller nzm7 FAZ-2-C6 FAZ-3-B16 FILS-C10-0 ELCB 4 pole reg-sud-w2k ELCB 3 pole FIP 7000
Contextual Info: 12/000 Miniature Circuit-Breakers MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2001/2002 12/001 Moeller HPL0211-2001/2002 Miniature circuit-breakers System overview Miniature circuit-breakers FAZ miniature circuit-breakers

2sc power amp TOSHIBA

Abstract: 2SC1551
Contextual Info: 3T TOSHIBA -CDISCRETE/OPTOl 9097250 TOSHIBA D I S C R E T E /O P T O 39C 00421 O U H F ~0' X K O Ö Ä ä * - i v f-y ? m O UHF~C O H i g h S p e e d Swi t c h i n g A p p i i c a t i o n s DË’J'ïa'iTasa 0000421 G ^ T - 3 Unit B a n d Low N o i s e A m p l i f i e r A p p l i c a t i o n s

JS8819-AS

Abstract: T-1228
Contextual Info: JS8819-AS FEA TU R ES: • LOW N O ISE FIG U R E ■ 0.5 G ATE LEN G TH ■ CH IP FO R M 1.1dB at f = 8 G H z I . 6 dB at f = 12 G H z ■ HIG H ASSO C IA TED GAIN I I . 5 dB at f = 8 G H z 9.5 dB at f = 12 G H z ■ H IG H M AXIM UM AVAILABLE GAIN 15.5 dB at F = 8 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)