Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    01AC09 Search Results

    SF Impression Pixel

    01AC09 Price and Stock

    TE Connectivity YCTD126E01AC098000

    Terminal Junction Modules MODULE ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics YCTD126E01AC098000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    01AC09 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


    Original     		PDF

    ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    Contextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have


    Original     		01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology PDF