01FEB99 Search Results

Contextual Info: 7 TH IS JÊL DRAWING CO PYRIGHT 15 U N P U B L I S H E D . RELEASED 19 BY AMP INCORPORATED. 6 4 5 3 2 ,19 FOR P U B L I C A T I O N DI ST LOC ALL R IG H T S R E S E R V E D . REVISIONS 14 AD D ESCRIPTION 109=86 87 DRAWN 010CT98 REV PER EC 0G51-0294-98 01 7 20 /9 9

Contextual Info: Si9926DY VISHAY Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ VGS = 2.5 V ±5 .2 20 □i D, D2 D2 Q P p Q SO-8 6 Si s2 6 N-Channel MOSFET N-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED)

Si4800DY

Contextual Info: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V "9 0.033 @ VGS = 4.5 V "7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4890DY

Contextual Info: Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V "11 0.020 @ VGS = 4.5 V "9 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si6469DQ

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S

Contextual Info: Si4880DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4800DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V "9 0.033 @ VGS = 4.5 V "7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: 4 3 T H IS DRAWING 15 UNPUBLISHED. i£L COPYRIGHT 2 RELEASED FOR PUBLICATION BY 19 AMP IN COR PO RA TE D. LOC AA ALL RIGHTS RESERVED. DIST REVISIONS 2 2 p LTR A •21 . 336[ .840] 0.381 —, [.015] j 3=175 [ . 125] 2 PLACES 3 . 937 [ . 155] c# J EC 0U1C-0043-00

Si4880DY

Contextual Info: Si4880DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V "13 0.014 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 D 1 S 2 S 3 G 4 D Si6469DQ

Contextual Info: Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V "11 0.020 @ VGS = 4.5 V "9 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si9926DY

Abstract: 70162
Contextual Info: Si9926DY Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) 20 ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

Contextual Info: _ SÌ9926DY VISHAY Siliconix ▼ Dual N-Channel 2 .5 -V G-S Rated MOSFET PRODUCT SUM M ARY V ds (V) r I d (A) DS(ON) (-2) 0.03 @ V GS = 4.5 V ±6 0.04 @ V GS = 2.5 V ± 5 .2 20 Di Dì D2 D2 Q Q Q SO-8 Di Di D2 d2 O Si O S2 N-Channel M O SFET

Contextual Info: n 6 7 T H I S DRAWING JÊL C OPYRIGHT 15 U N PU B L IS H E D . BY AMP INCORPORATED. D I ST LOC ALL R IG H T S R ES E R V E D . AD 109.86 87 2 3 , 19 R E L E A S E D FOR P U B L I C A T I O N 19 4 5 REVISIONS 14 DESCRIPTION DRAWN B C D REV PER REVISED REV PER

Contextual Info: Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V "11 0.020 @ VGS = 4.5 V "9 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST AA REVISIONS 22 LTR DESCRIPTION B A D 0.381 [.0 1 5 ] -3.56 ±0.25 [.1 40±.01 O] 8 PLACES □ D SHIELDS - 0 .2 5 4 [ .0 1 0] THICK COPPER ALLOY

Contextual Info: Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V "11 0.020 @ VGS = 4.5 V "9 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)