D0201AD
Abstract: MBR340 MBR350 MBR360 MS30 MS304 MS305 MS306 SR306
Text: 3 Amp Schottky Rectifier MS304 - MS306 £ ‘ : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim eter Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D 0201AD -i-1 Microsenni Catalog Number
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MS304
MS306
D0201AD
MBR340
MS305
MBR350
MS306
MBR360
SR306
D0201AD
MS30
SR306
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D0201AD
Abstract: MBR3100 MS308 MS309 MS310 SR3010 SR308
Text: 3 Amp Schottky Rectifier MS308 £ MS310 ‘ : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 -.375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D 0201AD - i- 1 Microsemi Catalog Number
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MS308
MS310
D0201AD
SR308
MS309
MS310
MBR3100
SR3010
D0201AD
SR3010
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Untitled
Abstract: No abstract text available
Text: LITEM £I SEMICONDUCTORS KBPC15 KBPC KBPC-W T 442 m 23 T 432 11097), o 'MAX> 25.4) _L ' 1.2 M IN. 130.5) Jfc_ 0.04 {1.0) D IA T Y p U H O lS FOR NO. B SCREW 193 <4.9) 0 1 A FEATURES • Rating to 1000V PRV • 300 amperes surge cap ability f i l i l i
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KBPC15
E95060
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: Data Sheet 2 .5 An*> FAST SW ITCHING MEGARECTIFIERS Semiconductor Mechanical Dimensions JE D E C D0-201 A D 1 r .1 9 0 1 .210 285 t . 3751 . 1.00 M in . r _L 1 t Features • HIGH TEMPERATURE METALLURGI C A L!^ BONDED CONSTRUCTION ■ 2JS AMP OPERATION T . = 55°C, WITH
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D0-201
RGP25A
RGP25A
RGP25B
RGP25D
RGP25J
RGP25K
RGP25M
1021X21X5
48X22X36cm
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Untitled
Abstract: No abstract text available
Text: 2.0 A n * SMD SUPER FAST RECTIFIERS D a ta Sheet miconductor Mechanical Dimensions Description ^>_4.06/4.60U| Cathode Package “SMB” I3.30/3.90 M .L _ .11/.30 UFS21 1 .6 5 /2 .1 ^ -*1 1 .9 1/2 .4 l = r =^ p . 0 l / . 20 1.90/2.15 Features • HIGH SURGE C A M B IU T Y
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UFS21
UFS22
UFS24
IIFS26
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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FR610
Abstract: No abstract text available
Text: Data Sheet 6.0 Amp FAST RECOVERY PLASTIC RECTIFIERS Semiconductor 0 M echanical Dim ensions Description JEDEC R6 . r t .340 i .360 .340 . 1.00 Min. . .3601 _L i t .050 typ. • FAST SW ITCHING FOR HIGH EFFICIENCY ■ 6.0 AMP OPERATION @ T = 5 5 °C , WITH
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FR610
21X21X5
48X22X36cm
51X25X30cm
47X22X27cm
FR610
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITON E L E C T R O N I C M^E D • LITEM * I SEMICONDUCTORS 8835^5 0 0 0 4 2 4 0 114 ■ T L I T KBPC10005 thru 1010 P rv o i VO LTA G E RANGE 50 to 1000 Volts C U R R EN T 10 Amperes PBPC-8 .500 094 2 381x45 CHAM HOLE FOR # 6 SCREW .158 (4.0 .142 (3.6)
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KBPC10005
381x45
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: LITE:*] : I PR1001L thru PR1007L SEMICONDUCTORS • L o w co st • Diffused ¡unction • L o w leakage • L o w fo rw a rd voltage d ro p .025 .64 .021 { 53) 1.0 (25.4} M IN • H igh c u rre n t ca p a b ility • E a s ily cleaned w ith F re o n , A lc o h o l, C h lo ro th e n e and
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PR1001L
PR1007L
DO-15
0201AD
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bta 41 1200 b
Abstract: No abstract text available
Text: l i t e s AKBPC2502 thru 2508 : I SEMICONDUCTORS VOLTAGE RANGE 200 to 800 Volts CURRENT 25 Amperes t i r " ' KBPC KBPC-W FEATURES • 1.2 M IN . 30.5 C o n tro lle d A va la n ch e Series w it h 2 5 0 V , H O LE FO R NO. 8 / S C R E W . 193 (4 9) O IA 4 5 0 V , 6 5 0 V , and 8 5 0 V minimum
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AKBPC2502
T90IUI,
DO-15
0201AD
bta 41 1200 b
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Untitled
Abstract: No abstract text available
Text: HIE D TAIWAN LITON ELECTRONIC U T E H iH • flflBSb'iS D0QM23H 110 » T L I T KBPC3005 thru 310 SEMICONDUCTORS 'V ' i 'h - v s VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere« PBPC-3 .445 111.3 FEATURES • • Rating to 1000V PRV Surge overload rating to 45 Amperes peak
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D0QM23H
KBPC3005
MIL-STD-202
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: LITEME SEMICONDUCTORS PR3001G thru PR3007G V O L T A G E RANGE 50 to 1000 V olts CURRENT 3.0 Amperes FEATURES • DO-201 AD Low cost • Glass passivated ju n c tio n • Low leakage • Low forw ard voltage drop • High cu rre n t cap ability • • 210 5.3
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PR3001G
PR3007G
DO-201
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: LITEttül SBL1630CT thru 1660CT SEMICONDUCTORS TO-220CT FEATURES • Plastic package has U /L • Flam m ability Classification 9 4 V -0 • Exceeds environm ental standards of M IL -S -1 9 5 0 0 • Metal o f silicon rectifier, m ajority carrier conduction
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SBL1630CT
1660CT
O-220CT
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC L I T E M : I 41E » S E M IC O N D U C T O R S • &&35h^B QQ04222 17T * T L I T 1N4001G thru 1N4007G -1 “ - 0 v - v 3 VO LTA G E RANGE 5 0 to 1000 Volts C U R R EN T 1.0 Ampere D O -4 1 FEATURES • Glass passivated chip • Low leakage
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QQ04222
1N4001G
1N4007G
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: LITEM BI 1N5400 thru 1N5408 s e m ic o n d u c to r s FEATURES • L o w co st DO-201 AD • D iffu s e d ju n c tio n • L o w leakage • L o w fo rw a r d vo lta g e d ro p .2 1 0 1.0 25.4 M IN L • High current capability • (5.3) .188 (4.8) E a sily cle a n ed w ith F re o n , A lc o h o l, C h lo ro th e n e and
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1N5400
1N5408
DO-201
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: UTE ? I SEMICONDUCTORS PBPC601 thru PBPC607 V O LTA G E RANGE 50 to 1000 Volts C U R R EN T 6 .0 Amperes PBPC-6 .445 11.3 H O L E FO R -405 (10.3) # 6 SCREW .158 (4.0) .142 (3.6) FEATURES • Rating to 1000V PRV • Surge overload rating to 125 Amperes peak.
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PBPC601
PBPC607
DO-15
0201AD
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HSM560
Abstract: DO-215AB
Text: Schottky Rectifiers Microsemi Division Package Outline Type Mil Data S p e c 1Sheet 10 IO Amps IFSM V F @ I Q VR (Volts) (Amps) (Volts) «I Part Number Microsemi CJ (pF> 1 SR504 MS504 SCF1045 LSM545G LSM545J MSP545 MSS45 MS505 HSM550G HSM550J SR505 HSM560G
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SR504
MS504
SCF1045
LSM545G
LSM545J
MSP545
MSS45
MS505
HSM550G
HSM550J
HSM560
DO-215AB
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bym26
Abstract: No abstract text available
Text: FAGOR a BYM26 SERIES 2.3 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. D 0-201AD Plastic Voltage 200 to 1000 V Current 2.3 A at 55 °C. • Glass Passivated Junction Mounting instructions • High current capability 1. Min. distance from body to soldering point,
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0-201AD
BYM26
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26
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N5401
Abstract: D0201AD N4935 DO-41 6R600 1N4140 D0-201AD DO41 1N4142 1N4007 DO-41 package
Text: INTERNATIONAL SEMICOND 4^E ]> • T00037Ô OOOOOll 471 B I S E » SCH OTTKY RECTIFIERS r Vrrm 7 O p e ra tin g a n d ^ S to ra g e Temp. R a n g e Type 1N5817 Package Volts DO-41 20 1.0 25 1N5818 1N5819 SR 120 DO-41 DO-41 DO-41 30 40 20 1.0 1.0 1.0 25 25
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1N5817
DO-41
1N5818
SR130
SR140
N5401
D0201AD
N4935
6R600
1N4140
D0-201AD
DO41
1N4142
1N4007 DO-41 package
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Untitled
Abstract: No abstract text available
Text: LITEM I P R 1501 s e m ic o n d u c t o r s th ru P R 1507 V O LT A G E RANGE .* 50 t o 1000 V olts CURRENT 1.5 Amperes . " DO-15 FEATURES • L o w cost • D iffused ju n c tio n • Low leakage • Low forw ard voltage d rop
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DO-15
DO-41,
0201AD
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Untitled
Abstract: No abstract text available
Text: i I SEMICONDUCTORS L IT E M 1 N 5 8 2 0 th r u 1 N 5 8 2 2 VO LTAG E 20 to SCHOTTKY BARRIER RECTIFIERS -.3 A M P S 40 RANGE V o lts CURRENT 3 . 0 A m peres DO-201 AD FEATURES • M e ta l-S e m ic o n d u c to r ju n c tio n w ith gua rd ring • E p ita x ia l c o n s tru c tio n
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DO-201
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: POWER l it e :*: i SEMICONDUCTORS KBP2005G thru 21OG VOLTAGE RANGE 50 to 1000 Volts CURRENT 2 AMPS. GLASS PASSIVATED SILICON BRIDGE RECTIFIERS & 2.0 A m p e re s FEATURES R atin g to 1 0 0 0 V PR V Surge overlo ad ra tin g to 65 A m peres peak Ideal fo r p rin te d c irc u it board
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KBP2005G
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: LITEM? I SE M IC O N D U C T O R S DF1500S thru DF1510S VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere 1.5 AMPS. SURFACE MOUNT GLASS PASSIVATED SILICON BRIDGE DF-S .3 1 0 7 .9 1 — .2 9 5 (7.41—— .255 (6.5 h .2 4 5 ( 6 .2 H a . + F E A TU R ES J.
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DF1500S
DF1510S
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: UTE[*]?I M SEMICONDUCTORS P 1 5 ,2 5 ,3 5 MP-CASE .0 3 2 84 FEATURES 3 9 (9 9) 3 8 I9 7) 'w R a tin g to 1 0 0 0 V P R V . . y ^ 4 0 0 am peres surge c a p a b ility HOLE FOR # 1 0 S C R E W H igh e ffic ie n c y K 1 7 .5 ) 2 2 (5 5 9 ) EPOXY CASE X 7 ^ — 7 D IA .
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DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: L IT E M E MBR730 thru MBR760 SEMICONDUCTORS VOLTAGE RANGE •5 AMPS. SCHOTTKY BARRIER RECTIFIERS 30 to 60 Volts CURRENT 7.5 Amperes _ TQ -2 20 FEATURES • P lastic package has U /L • F la m m a b ility C la ssifica tio n 9 4 V -0
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MBR730
MBR760
DO-15
0201AD
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