0235BQS Search Results

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

Contextual Info: FEATURES • High-speed operation • 1500 Vrms I/O isolation • Current-limit protection • High surge capability • Linear, ac/dc operation • Clean, bounce-free switching • Extremely low power consumption • High-reliability monolithic receptor • Surface-mountable

SDA30C162

Abstract: 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor
Contextual Info: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C163-2 Advanced Data Sheet 05.94 ÖB3SbQ5 0 0 ö0 5b 3 447 • SD A 30C163-2 Revision History: Original Version: 05.94 Previous Releases: Page Subjects changes since last revision

automatic phase selector circuit diagram

Abstract: smd ags "if amplifier" siemens P-DSO-20 Q6700-A5046 TDA6142X gg53 SIEMENS saw filter Quadrature Demodulator
Contextual Info: bSE ]> • 023StiGS 00537L,G S77 ISIEG SIEMENS SIEMENS AKTIEN6ESELLSCHAF SAT-IF-Demodulator TDA 6142X Bipolar IC Preliminary Data Features • Good C/N response through high input sensitivity • Reduced noise bandwidth of prescaler at 480MHz through LC circuit

514100J-80

Abstract: 514100j-10
Contextual Info: El SIEMENS f l5 3 5 b 0 5 0G2G140 1 E21SIEG S IE M E N S A K T I E N 6 E S E L L S C H A F 4M X 1-Bit Dynamic RAM 4 7 E 3> HYB 514100-80/-10 Advanced Information • • • • • • • • • • • 4 194 3 04 words by 1-bit organization Fast access and cycle time

Contextual Info: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit sehr kleinem Dunkelstrom Silicon PIN Photodiode with Very Low Dark Current BPW 32 s p a c in g E L - R a d ia n t se nsitive UJ a re a 1.Ox 1.0 C a th o d e geooboi A p p ro x. w eigh t 0 .0 5 g M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller SAB-C502 Preliminary • Fully compatible to standard 8051 microcontroller • Versions for 12 / 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing of program and external data memory

Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n

101F

Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Contextual Info: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal

sfh 309 fr

Contextual Info: SIEM EN S GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat* M f 0 .4 oo^ öö V 4.1 I—-3 .9 § .? !_ 4.0 3.6 -ífeÆ sa o -r Mw , 3.5 I Chip positio n X m 0 .4 — 29— 27 C athode=SFH 409 Anode =SFH487 A p p ro x. w e ig h t 0 .3 g

Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

SLE4412

Abstract: 4412 SLE4412C
Contextual Info: SIEMENS Intelligent non erasable PROM SLE 4412 NMOS Features • • • • • 256 x 1 bit organization EPROM Bit by bit memory access (to realize a debit card) 96 bits protected in write mode by security cell Three areas: protected area, transaction area, test area

Contextual Info: S IE M E N S NPN Silicon High-Voltage Transistors BFN 16 BFN 18 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low coilector-emitter saturation voltage • Complementary types: BFN 17, BFN 19 PNP

bch limit switch ll1

Abstract: SDA9064 EP-613 power supply sda 20160 EP-603 power supply ep 613 27mhz remote control transmitter and receiver ci VL-609 EP-613 DC POWER SUPPLY sda20160
Contextual Info: bSE D • ÖSBSbQS DQ53EÖ4 HTb WÊSIZG SIEMENS SIEMENS AKTIENGESELLSCHAF Digital Deflection Controller SDA 9064 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically

Contextual Info: • fl23Sb05 0 0 * 1 3 01 6 Sb^ ■ SIEMENS PROFET BTS 621 L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9

Contextual Info: SIEMENS SFH750 SFH750V T13/4 5 mm LED PACKAGE PLASTIC CONNECTOR HOUSING Plastic Fiber Optic Emitter FEATURES • 2.2 mm aperture holds standard 1000 micron plastic fiber • No fiber stripping required • • • • Good linearity Sensitive in visible and near IR range

Q62702-D1070

Abstract: TRANSISTOR D 1785 BD430
Contextual Info: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

A6 9008 ADM

Abstract: sem 2106 circuit diagram free sem 2106 sem 2106 24 pin sem 2106 diagram sem 2106 G1235 sem 2106 data set BC517A
Contextual Info: SIEM ENS 8-Bit CMOS Microcontroller C517A Advanced Inform ation Full upward com patibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers

HYB514256A

Abstract: Q67100-Q490 514256A HYB514256 514256az
Contextual Info: a ô23SbOS 0 0 2 0 4 2 1 b B I S I E 6 SIEMENS AKTIENGESELLSCHAF SIE ^ 47E D ^ ' 2 3 - / 7 ì 4 HYB514256AL-60/-70 256K x 4-Bit Dynamic RAM Low Power Version Advance Information • 262 144 x 4-bit organization • Fast access and cycle time 60 ns access time

Contextual Info: Capacitors with Soldering Star SIKOREL 125, LL Grade B 41 592 Extremely high reliability and long service life Operation at temperatures up to 125 *C Construction • Charge-discharge proof, polar • Aluminum case, partially insulated • Solder pin terminals on mounting base that is securely