025MW Search Results

KSP12

Abstract: transistor 605
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • CoHector-Emitter Voltage: V C e s “ 2 0 V • Collector DissipatkxrPc max «025mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic CoHector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SDP8105 Silicon Photodarlington FEATURES . T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8105 is an NPN silicon photodarlington

Contextual Info: 12-Bit 800kHz Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • 1.25|is THROUGHPUT TIME The ADS7819 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a complete 12-bit capacitor-based SAR A/D with inher­

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S ADVANCE INFORMATION DS3645-1-2 SP8680B 575MHZ+10/11 The SP8680B is an ECL variable modulus divider, with ECL and TTL compatible outputs. The circuit can operate from either ECL or TTL supplies. It divides by 10 when either of the

ME0412

Abstract: ME0413 ME0411
Contextual Info: M E4101 • ME4102 • ME4103 M SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO FEATURES • H ig h G a i n M ECH AN ICAL O UTLINE APPLICATIO NS h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y