02S7S2Ö Search Results

Contextual Info: ADV MICRO M E M O R Y b4E J> D2S7S2Ô m 0031^21 T3T Advanced Micro Devices Am27C128 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity

Contextual Info: ADV MICRO M E M O R Y 4ÛE D 025752Û DD3DSÛ3 ö T—46—13-25 Am27X512 Advanced Micro Devices 65,536 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

Contextual Info: bME D ADV MICRO MEMORY WM 02S7S2Ö DÜ35177 bl5 • A M D 4 Am27X010 1 Megabit (131,072 x 8-Bit) CMOS ExpressROM Device ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime

Contextual Info: ADV MICRO b4E MEMORY D • 02S7SEÖ 00321SÖ 7bD ■ Advanced Micro Devices Am27X256 256 Kilobit (32,768 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

D0304

Abstract: T-46
Contextual Info: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:

Contextual Info: ADV M IC RO A m MEMORY IME d | 0ES75SÔ Q027S45 7 £ 1 Advanced Micro Devices 2 1 4 7 / A m 21 L 4 7 4096x1 Static RAM DISTINCTIVE C H A RA CTERISTICS • High speed — access times down to 35 ns maximum • Automatic power-down when deselected • Low power dissipation

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

Contextual Info: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current

am28F020

Abstract: 28F020
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

AM27CO10

Abstract: AM27C010-120DC AM27C010 gg2mt
Contextual Info: ADV MICRO MEMORY 14E 0 1 Q5S?5Eâ 0Ü27M07 t | Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMO,S EPROM DISTINCTIVE CHARACTERISTICS Compact 32-pin DIP package requires no hardware change for upgrades to 8 megabits Easy upgrade from 28-pin JEDEC EPROMs

am28c256

Contextual Info: ADV M IC R O ÍM E H O R Y } l b De | [1 2 5 7 5 2 6 Am28C256 0G2fe.fe.2fl i 27 32K x 8 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current

amd socket 940 pinout

Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
Contextual Info: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

DG33 transistor

Contextual Info: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase

AM27C64

Abstract: DG3032 AM27C64-90DC
Contextual Info: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■

AMD am3 socket pinout

Abstract: amd am3 pin out AM28F512
Contextual Info: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption

AM28F020

Abstract: D0307 28F020 G03G 32ag
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

Contextual Info: ADVANCE INFORMATION * Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Embedded Program Algorithms

Contextual Info: ADV NICRO {MEHORY} Tb D eT| 0 2 S 7 52 Ô 002SÖ71 Q J " T - % - l5 : 2 5 Am10P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with Increasing tempera­

Contextual Info: a FINAL Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard on most speeds — 100 ns

Contextual Info: ADV MI CRO ME MORY b4E » GSS7SSÛ DD3SÜSD ÖS1 • AMD4 il Am27C400 Advanced Micro Devices 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tim e Single +5 V pow er sup ply — 100 ns ■ Low pow er consum ption

Contextual Info: — B M M B B B iw n n iim v i w i r w m w M t æ ^ i — -^-“ *i71iiHrcnfnORY> It 0257528 003585? I - S H b - 13 Ami OP14/Am1 OOP14/Am1 OKP14 4,096-Bit 1 0 2 4 x 4 ECL Bipolar PROM ADVANCE INFORM ATIO N • Fast Access tim e (8 ns typ.) — im proves system cycle