02AUG10 Search Results
02AUG10 Datasheets Context Search
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC DIST R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR B1 DESCRIPTION REVISED PER DATE DWN HMR MW 02AUG10 E C O - 1 0 - 0 1 41 68 |
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02AUG10 FTD0904 | |
FTD0904
Abstract: nut ring
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02AUG10 FTD0904 ALLAUG10 nut ring | |
BC360Contextual Info: 6 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 3 2 PU B LIC ATIO N R E VIS IO N S D IS T LOC ALL INTERNATIONAL RIGHTS RESERVED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. LTR A1 D E S C R IP T IO N REVISED PER DATE DWN 02AUG10 E C O - 1 0 - 0 1 41 68 |
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02AUG10 ETD7904 BC360 | |
IRF9Z24L
Abstract: IRF9Z24S SiHF9Z24S
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IRF9Z24S, SiHF9Z24S IRF9Z24L, SiHF9Z24L 2002/95/EC 11-Mar-11 IRF9Z24L IRF9Z24S | |
IRF9510SContextual Info: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21 |
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IRF9510S, SiHF9510S O-263) 2002/95/EC 11-Mar-11 IRF9510S | |
IRF9530S
Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
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IRF9530S, SiHF9530S O-263) 2002/95/EC 11-Mar-11 IRF9530S SiHF9530S-E3 SiHF9530S-GE3 | |
si7997Contextual Info: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7997DP 18-Jul-08 si7997 | |
C 128 NContextual Info: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R P U B L IC A T IO N A L L INTERNATIO NAL RIGHTS C O P Y R IG H T - B Y TYCO E LE C TR O N IC S 1 - QUALITY 2. RESERVED. C O R P O R A TIO N . C ON F O R M A N C E PACKAGED PER I NSPECTION SLOT |
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sharp laser diodes
Abstract: TSOP855
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vse-db0090-1010 sharp laser diodes TSOP855 | |
Contextual Info: T95 Vishay Sprague Solid Tantalum Chip Capacitors, TANTAMOUNT , High-Rel COTS, Conformal Coated Case FEATURES • High reliability; Weibull grading available • Surge current testing per MIL-PRF-55365 options available • Standard and low ESR options • Terminations: SnPb, standard. 100 % tin |
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MIL-PRF-55365 2002/95/EC 18-Jul-08 | |
SQD50N04-4m5L
Abstract: SQD50N04-4M5L-GE3
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SQD50N04-4m5L AEC-Q101 2002/95/EC O-252 O-252 SQD50N04-4m5L-GE3 18-Jul-08 SQD50N04-4m5L SQD50N04-4M5L-GE3 | |
SQJ469EPContextual Info: SQJ469EP Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 6 V 0.029 ID (A) - 32 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21 |
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SQJ469EP 2002/95/EC AEC-Q101 SQJ469EP-T1-GE3 11-Mar-11 SQJ469EP | |
G 1754 diode
Abstract: Diode 1754
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SQS404EN 2002/95/EC AEC-Q101 SQS404EN-T1-GE3 18-Jul-08 G 1754 diode Diode 1754 | |
Contextual Info: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21 |
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IRF9540S, SiHF9540S 2002/95/EC O-263) 18-Jul-08 | |
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Contextual Info: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
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SQS466EEN 2002/95/EC AEC-Q101 SQS466EEN-T1-GE3 18-Jul-08 | |
Contextual Info: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21 |
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SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 18-Jul-08 | |
capacitor 0.01 k 630 MKT
Abstract: capacitor 0.33 k 100 MKT
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2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 capacitor 0.01 k 630 MKT capacitor 0.33 k 100 MKT | |
Contextual Info: SQJ844EP Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd |
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SQJ844EP 2002/95/EC AEC-Q101 SQJ844EP-T1-GE3 18-Jul-08 | |
91077Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
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IRF9530S, SiHF9530S 2002/95/EC O-263) 18-Jul-08 91077 | |
Contextual Info: SQ4920EY Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.016 • TrenchFET Power MOSFET RDS(on) () at VGS = 4.5 V |
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SQ4920EY 2002/95/EC AEC-Q101 SQ4920EY-T1-GE3 18-Jul-08 | |
Contextual Info: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
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SQS466EEN 2002/95/EC AEC-Q101 SQS466EEN-T1-GE3 11-Mar-11 | |
sq2337esContextual Info: New Product SQ2337ES Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.270 ID (A) - 2.2 TO-236 (SOT-23) G S 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SQ2337ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2337ES OT-23 SQ2337ES-T1-GE3 18-Jul-08 | |
Contextual Info: SQS464EEN Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
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SQS464EEN 2002/95/EC AEC-Q101 SQS464EEN-T1-GE3 18-Jul-08 | |
Contextual Info: SQD50N04-4m5L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQD50N04-4m5L AEC-Q101 2002/95/EC O-252 O-252 SQD50N04-4m5L-GE3 11-Mar-11 |