02SEP05 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — 2 - LOC ALL RIGHTS RESERVED. R EVIS IO N S DIST 6 AJ LTR DESCRIPTION H1 DATE REVISED PER E C O - 0 5 - 0 0 7 7 0 4 DWN APVD BM KW 02SEP05 D D CONTACT CRIMP TOOLING: CRIMP TOOL M 2 2 5 2 0 / 2 - 0 1 WITH POSTITIONER DMC K997

aj 312

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S 6 AJ LTR B ,675 17,1 ,535 13,6 DESCRIPTION DATE DWN BM KW 02SEP05 REVISED PER E C O - 0 5 - 0 0 7 6 8 7 1, DESIGNED FOR USE WITH .085 SEMI-RIGID CABLE.

aj 312

Contextual Info: TH IS DRAWING IS U N P U B LIS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR PUBLICATION A L L RIGHTS LOC RESERVED. R E V IS IO N S D IST 6 AJ LTR B ,675 17,1 ,535 13,6 DESC RIPTIO N DATE DWN BM KW 02SEP05 REVISED PER E C O - 0 5 - 0 0 7 6 8 7

DMC CRIMP

Abstract: 535B spec cable RG-174 DMC TOOL spec RG-174 cable tyco crimp specification
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — - LOC ALL RIGHTS RESERVED. REVIS IO N S DIST 6 AJ LTR DESCRIPTION 01 REVISED PER E C O - 0 5 - 0 0 7 7 0 4 DATE DWN APVD 02SEP05 BM KW D D CONTACT CRIMP TOOLING: CRIMP TOOL M 2 2 5 2 0 / 2 - 0 1 WITH POSTITIONER

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. G REVISIONS DIST 14 LTR G1 1 W IRE IN S U LA T IO N DESCRIPTION REV ECR 05-010246 DATE DWN APVD 02SEP05 JR TM D.D. 2,7-3,6

74109

Abstract: 0619 817A AN609 Si4496DY 74109 application circuit
Contextual Info: Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: TR3 Vishay Sprague Solid Tantalum Chip Capacitors Tantamount Low ESR, Molded Case FEATURES • Terminations: 100 % Tin, Standard. SnPb available. • Molded case available in five case codes. • Compatible with "High Volume" automatic pick and place equipment.

SOT23 N-Channel mark 6

Abstract: 38Nx SOT323 reflow sot323 transistor marking STM1061 5304 marking 45Nx 41Nx sc70-3 sot323 marking 34 37
Contextual Info: STM1061 Low Power Voltage Detector FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ FACTORY-TRIMMED VOLTAGE THRESHOLDS IN 0.1V INCREMENTS FROM 1.6V TO 5.5V ±2% VOLTAGE THRESHOLD ACCURACY OPERATING VOLTAGE 0.7V to 6.0V OPEN DRAIN OUTPUT LOW SUPPLY CURRENT - 0.9µA typ

SOT323-3

Abstract: SS 3 MARKING sot23-3 STM1061
Contextual Info: STM1061 Low Power Voltage Detector Features • Factory-trimmed Voltage Thresholds in 0.1V Increments from 1.6 to 5.5V ■ ±2% Voltage Threshold Accuracy ■ Operating Voltage 0.7 to 6.0V ■ Open Drain Output ■ Low Supply Current of 0.9µA typ ■ Guaranteed OUT Assertion Down to VCC = 0.7V

Contextual Info: STM1061 Low Power Voltage Detector PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ FACTORY-TRIMMED VOLTAGE THRESHOLDS IN 0.1V INCREMENTS FROM 1.6V TO 5.5V ±2% VOLTAGE THRESHOLD ACCURACY OPERATING VOLTAGE 0.7V to 6.0V OPEN DRAIN OUTPUT LOW SUPPLY CURRENT - 0.9µA typ

4894

Abstract: AN609 Si4490DY 74108
Contextual Info: Si4490DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74107

Abstract: 74107 data sheet AN609 Si4484EY
Contextual Info: Si4484EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

BA20-BA31

Abstract: AT75C AT75C221 PA11 PA12 PA19 atmel ice
Contextual Info: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz Operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • – Up to 60 MHz Operations – 104K bytes of Integrated Fast RAM, Codec Interface

Contextual Info: VO3062 / 3063 Vishay Semiconductors Phototriac, Zero Crossing, 1.5 kV/µs dV/dt, 600 V Features • • • • • • • 1500 V/µs dV/dt minimum 600 V Blocking Voltage Zero Crossing Detector e3 Low Input Trigger Current 6 pin DIP package Lead Pb -free component

Contextual Info: STM1061 Low Power Voltage Detector Features • Factory-trimmed Voltage Thresholds in 0.1V Increments from 1.6 to 5.5V ■ ±2% Voltage Threshold Accuracy ■ Operating Voltage 0.7 to 6.0V ■ Open Drain Output ■ Low Supply Current of 0.9µA typ ■ Guaranteed OUT Assertion Down to VCC = 0.7V

VO3063

Abstract: VO3063-X007T Zero Crossing Triac Detector
Contextual Info: VO3062 / 3063 Vishay Semiconductors Phototriac, Zero Crossing, 1.5 kV/µs dV/dt, 600 V Features • • • • • • • 1500 V/µs dV/dt minimum 600 V Blocking Voltage Zero Crossing Detector e3 Low Input Trigger Current 6 pin DIP package Lead Pb -free component

IEC 60603-7 variant 02

Contextual Info: tile Rechte Vorbehalten/ ÁII rights reserrei 6 5 recommended view PC-Board components layout side H.i.1 I = |D.05|*h »1 O.Sil.1 & »1 ^ O l \ SsNv x4 pjds 4000 I /IEC S MC 60603-7 modular 1 2 mm m a x i . above 0 ? ,? -*J *16 pads >H * I0O.o s it i

74103

Abstract: 74103 datasheet 7916 AN609 Si4473BDY 74103+flip+flop
Contextual Info: Si4473BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

N2T-TR-A02-00250

Abstract: TRANSCALC N2A-XX-S1449-1KB HA 11561 N2F-TR-E01-00005 N2A-XX-S056R-350 t029 ir M-Flux AR kit fet 27611 U G N 3140 sensor v
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book transducer-class strain gages vishay micro-measurements vse-db0075-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

strain gage

Contextual Info: Creep and Modulus Compensation Vishay Micro-Measurements Transducer-Class Strain Gages CREEP COMPENSATION Commercial transducers regularly achieve a creep specification of less than ± 0.02% of full scale FS for a 20-minute test. To attain this level on a high production basis,