030619EAA Search Results

Contextual Info: CMS15 TOSHIBA Schottky Barrier Diode CMS15 Switching Mode Power Supply Applications Output voltage: ≤12 V Unit: mm DC/DC Converter Applications • • • • Forward voltage: VFM = 0.58 V (max) Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 60 V

2SC5563

Contextual Info: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: S6903G,S6903J TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE S6903G, S6903J AC POWER CONTROL APPLICATIONS Unit: mm z High Rush Current Capability Optimal for controlling actuators where high rush current may flow : ITRM = 120A n = 100k cycle, Tc = 45°C

Contextual Info: 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.5A • Very Fast Reverse Recovery Time: trr = 400ns (Max)

Contextual Info: CRS02 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS02 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm • Low forward voltage: VFM = 0.40 V max • Average forward current: IF (AV) = 1.0 A • Repetitive peak reverse voltage: VRRM = 30 V

VR1G

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

Contextual Info: 5JUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5JUZ47 SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Forward Current : IF AV = 5 A z Ultra Fast Reverse-Recovery Time

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current

GT40Q323

Contextual Info: GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector

Contextual Info: 1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5JZ41, 1R5NZ41 General Purpose Rectifier Applications • Unit: mm Average Forward Current: IF AV = 1.5 A (Ta = 25°C) • Repetitive Peak Reverse Voltage: VRRM = 600V, 1000 V • Peak One Cycle Surge Forward Current (non repetitive): IFSM = 100 A

Contextual Info: S5688B,S5688G,S5688J,S5688N TOSHIBA Rectifier Silicon Diffused Type S5688B, S5688G, S5688J, S5688N General Purpose Rectifier Application Unit: mm • Average forward current: IF AV = 1.0 A • Repetitive peak reverse voltage: VRRM = 100 V ~ 1000 V Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1S1832 TOSHIBA Rectifier Silicon Diffused Type 1S1832 High-Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.7 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 1800 V • Reverse Recovery Time: trr = 6.0 µs •

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

Contextual Info: 16DL2CZ47A,16FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 16DL2CZ47A,16FL2CZ47A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage Unit: mm : VRRM = 200 V, 300 V z Average Output Rectified Current : IO = 16 A

Contextual Info: U20DL2C53A TOSHIBA High Efficiency Diode Stack HED Silicon Epitaxial Type U20DL2C53A Switching Mode Power Supply Application Converter and Chopper Application • Repetitive peak reverse voltage: VRRM = 200 V • Average output recified current: IO = 20 A

10lc48

Contextual Info: U10LC48 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE U10LC48 Unit: mm General Purpose Rectifier Applications Repetitive Peak Reverse Voltage • Average Forward Current • TO-220 SM Package : VRRM = 800 V : IF AV = 10 A 3±0.2 • ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

marking 2gw

Contextual Info: U2GWJ44 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U2GWJ44 SWITCHING MODE POWER SUPPLY APPLICATION z z z z Unit: mm Low Forward Voltage : VFM = 0.55V Max Average Forward Current : IF (AV) = 2.0A Repetitive Peak Reverse Voltage : VRRM = 40V

1ZC24

Contextual Info: 1ZC12~1ZC120 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZC12~1ZC120 Unit: mm CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES z Average Power Dissipation : P = 1.0W z Zener Voltage : VZ = 12 V ~ 120 V z Tolerance of Zener Voltage VZ : ±10% z Plastic Mold Package

Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

Contextual Info: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 20 A

Contextual Info: CMS02 TOSHIBA Schottky Barrier Rectifier Trench Schottky Barrier Type CMS02 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.40 V max Average forward current: IF (AV) = 3.0 A

TRANSISTOR 15J321

Abstract: 15j321 RG105
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.