038S Search Results

Contextual Info: 33-43 GHz GaAs MMIC Single Balanced Up/Down Converter Mixer ESAlpha AM 038S 1-00 Chip Outline Features • Low Conversion Loss, 6.5 dB a 1.435 — ■ Low LO Power Requirement, 6 dBm ■ Wide IF Bandwidth, 0 -5 GHz 1 1 H L IIH y ~ i= \ 1.102 ■ No DC Bias Required

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

Contextual Info: PANASONIC PANASONI C -CIO 72 I NDL t E L E C T R O N I C ~~.~ 1 7 ^ 3 2 0 5 2 7 2Ç 0 6 6 1 3 — p M N 8038, M 038S • M M N 8038, & Í É Í f D !iV., T R T ^ CCD Delay Line for Video Signal ■ ^^SESO/Pin Assignment £ l tz M N 8 0 3 8 S I± ,

Contextual Info: B w d u it Aluminum One-Hole Aluminum Lugs For use with aluminum or copper cables One-Hole LugType LAA LISTED n yp eLAB Dimensions in Inches Bolt Hole Size I.D. O.D. A W G C 1 /4 " 5 /1 6 " .20 .20 .34 .34 2 .2 0 2 .2 0 .55 .55 .41 .41 52 52 T Std. Pkg.

K1502

Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

A0937

Contextual Info: Intelligent Access Voice Solutions AMDÌ1 Am79D2251 Dual Intelligent Subscriber Line Audio-Processing Circuit ISLAC™ DISTINCTIVE CHARACTERISTICS • High performance digital signal processor provides programmable control of all major linecard functions

SCR 30A 100V

Abstract: do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr
Contextual Info: Microsemi Corporation Colorado Product Selection Guide Spring 2004 Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules

Contextual Info: lOrdering number : EN5115| MOS LSI LC89915, 89915M No. 5115 NTSC 1 H Delay Line Overview Package Dimensions The LC89915 and LC89915M are delay lines that produce a 1 H delayed signal for NTSC format with an external low-pass filter. It can also provide 1 H delayed signal for

do213ab

Abstract: do215 MS10411 SCR 30A 100V microsemi cross index X3420 Bridge Rectifier, 35A, 600V DO215AA 1N5823 scr 1a 1200V
Contextual Info: POWER CONDITIONING PRODUCT SELECTION GUIDE Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules 9-10 Hermetic Power Packages