03A S4 Search Results

epson cb report

Abstract: 03a a03 E0C6002 ICE6200 KIT6002 PC-9801 OPT1301
Contextual Info: MF973-03a CMOS 4-BIT SINGLE CHIP MICROCOMPUTER E0C6002 DEVELOPMENT TOOL MANUAL NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

CORE i3 ARCHITECTURE

Abstract: Cpu Core i7 1186D core i3 core i7 alu I3 CPU IA15 S1C63000 jrc 1001b x0s7
Contextual Info: MF855-03a CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63000 Core CPU Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. NOTES: 1. TO BE USED WITH PANDUIT METAL BANDING MBH-MR & MBH-TLR. 2. APPLICATION TOOL: GS4MT, ST2MT, PPTMT, ST3MT, OR HTMT. 3. TOOL TENSION SETTING: 4 TO 8 GS4MT AND PPTMT ONLY

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. NOTES: 1. TO BE USED WITH PANDUIT METAL BANDING MBSH-TR 2. INSTALLATION TOOL: RT2HT, PBTMT, RT2HTN 3. BRACKETS [ ] DENOTES DIMENSIONS IN MILLIMETERS

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. A NOTES: 1. FOR USE WITH PANDUIT MSW50T15-CR4 & MSW50T15-CR6 CONTINUOUS STRAPPING. 2. APPLICATION TOOL: BT2MS75, BT2HT .610 3. DIMENSIONS IN BRACKETS [ ] ARE IN MILLIMETERS

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. MAX.BUNDLE PACKAGE "L" LENGTH DIA QTY +/-.3 [7] MLT4DEH15-Q316 4" [102] 25 29.5" [749] MLT6DEH15-Q316 6" [152] 25 41.5" [1054] MLT8DEH15-Q316

pic646

Contextual Info: PIC645 PIC646 PIC647 PIC655 PIC656 PIC657 POWER INTEGRATED CIRCUIT Switching Regulator 15 Am p Positive and Negative Power Output Stages FEATURES • Designed and characterized for sw itching regulator a p p licatio ns • Cost saving design reduces size, im proves efficiency, reduces noise and RFI See note 4.

SS89 transistor

Abstract: SS89 siemens BS 240 siemens SS89 ss89 to-92 BSS89 BSS 89
Contextual Info: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Is • Logic Level • ^ G S th 1 ^ 3 ^ = 0.8.2.0V VPT05158 Pin 1 Pin 2 G Type BSS 89 ^bs 240 V Type BSS 89 BSS 89 BSS 89 BSS 89 Ordering Code Q62702-S455 Q62702-S519

BSS98

Abstract: ss98 transistor siemens ss98
Contextual Info: SIEMENS BSS98 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Type hi 0.3 A BSS98 Vqs 50 V Type BSS98 BSS98 BSS98 BSS98 Ordering Code Q67000-S464 Q62702-S053 Q62702-S517 Q62702-S635 flbs(on)

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. .35 9.0 .30 (8.0) .06 .09 (1.5) (2.3) B B .71 (18.0) CLEARANCE FOR #8 [4mm] MOUNTING SCREW .176 [4.5] DIA. NOTES: 1. DIMENSIONAL TOLERANCES:

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. B NOTES: 1. FOR USE WITH PANDUIT,MSW38T15-CR4 & MSW38T15-CR6 CONTINUOUS STRAPPING. 3. DIMENSIONS IN BRACKETS [ 316 2. APPLICATION TOOL: BT2MS75, BT2HT

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER MLT4SH-LP316 MLT6SH-LP316 MLT8SH-LP316 MLT10SH-LP316 MLT12SH-Q316 .88 22.4 B .75 .02 [19.1] MAX BUNDLE DIAMETER

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. MAX.BUNDLE DIA 4" [102] 6" [152] 8" [203] 10" [254] 12" [305] PANDUIT PART NO MLT4EH15-LP316 MLT6EH15-LP316 MLT8EH15-LP316 MLT10EH15-LP316

Contextual Info: II 12 NO. OF CKTS. DIM. A . IB ± .004 4.981 -15 •I9 6 i .006 .24 MIN. PIN INSERTION DEPTH 10.19 .13 .400 ± .005 _6_ I2-T0t .13 .500 ±.005 .5961 .007 RECOMMENDED P.C. BOARD LAYOUT 7 I5.24i .15 .600 ±.006 I7 .6 8 i.2 0 .6 9 6 1 .008 FOR ASS'Y. PROC. A

3PHA 20

Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
Contextual Info: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は，次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様

Contextual Info: LM2664 Switched Capacitor Voltage Converter General Description Features The LM2664 CMOS charge-pump voltage converter inverts a positive voltage in the range ot +1.8V to +5.5V to the cor­ responding negative voltage ot - 1 .8V to -5.5V. The LM2664 uses two low cost capacitors to provide up to 40 mA of out­

TN0201K

Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35

PY 471

Abstract: EH 050 AP
Contextual Info: i DRAWING MADE IN AMERICAN PROJECTION THIS DRAWING IS UN PUBLISHED * . 19 R E L E A S E D FOR PUBLICATION REVISIONS 19 b y AM P I n c o r p o r a t e d , H a r r is b u r g , P a . A l l in t e r n a t io n a l r ig h t s A M P PRODUCTS MAY BE COVERED BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING.

Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V APPLICATIONS TN0201K TN0201KL 0.42

TN0201K

Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35

TN0201K

Abstract: TN0201KL TN0201KL-TR1 MOSFET SOT-23
Contextual Info: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35

Contextual Info: S P E C I F I C A T I O N DEV I CE NAME : Power M O S F E T TYPE NAME ; SPEC. No. :_ 2 S K 2 7 6 2 - 0 1 Fuji L. S E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJLtd

ENC471

Abstract: ELLS 110 ENC391C-14A ENC621 ENC471D-10A ENC221K-14A ENCI12D-10A ENC221C-14A ENC271C-14A ENC271K-14A
Contextual Info: 8S-V a / u & : r - r z/. bgwwç'Q I ' P5 o < 7P§> < m m ± m O m % 01=Fi < ? Ö3 I S ° |!i!l ¿ ujuj V Q> s*0Z/8 : ¥ l i ^ — ^ ‘ ¿ * tí >' ‘ Í 7 ' n 33ifmi 2 ¿ s m i# S 3 'Z iín w m m & w íH c Z o w z ° ® B : í M ÍIÍÜY ¥ 9 í } i f : I VOSÜ3f e ' t ' i n " - Y

fuji ipm

Abstract: AC2500 7mbp25ru2a120 ipm application note fuji 11 kw ED-4701 H04-004 HCPL-4504 MT5F12959
Contextual Info: This material and the information herein is the property of Fuji Electric Device Technology Co., Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor usBd for the manufacturing purposes without the express written consent of