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Rochester Electronics LLC SPP03N60S5XKSA1 MOSFET N-CH 600V 3.2A TO220-3
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DigiKey	SPP03N60S5XKSA1	Tube	51,588		406	1 - 10 - 100 - 1000 $0.74 10000 $0.74	Buy Now
Rochester Electronics LLC SPD03N60S5BTMA1 MOSFET N-CH 600V 3.2A TO252-3
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DigiKey	SPD03N60S5BTMA1	Bulk	11,526		461	1 - 10 - 100 - 1000 $0.65 10000 $0.65	Buy Now
Rochester Electronics LLC SPB03N60S5 N-CHANNEL POWER MOSFET
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DigiKey	SPB03N60S5	Bulk	1,000		550	1 - 10 - 100 - 1000 $0.55 10000 $0.55	Buy Now
Infineon Technologies AG SPN03N60S5 MOSFET N-CH 600V 700MA SOT223-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPN03N60S5	Reel			1,000	1 - 10 - 100 - 1000 $0.54596 10000 $0.4445	Buy Now
Bristol Electronics	SPN03N60S5		1,550			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	SPN03N60S5		515			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP03N60S5HKSA1 MOSFET N-CH 600V 3.2A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP03N60S5HKSA1	Tube			500	1 - 10 - 100 - 1000 $0.6489 10000 $0.6489	Buy Now

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03N60S5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
03N60S5 Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 Contextual Info: 03N60S5 03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5	PDF
03n60s5 Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5 Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5	PDF
DIODE JS.9 smd Contextual Info: SIEMENS 03N60S5 03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd	PDF
03n60s5 Contextual Info: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5	PDF
P-TO263-3-2 Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPB03N60S5 P-TO263-3-2 03N60S5 SPB03N60S5 Q67040-S4197 P-TO263-3-2	PDF
03N60 Abstract: SPB03N60S5 Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	SPB03N60S5 PG-TO263 03N60S5 SPB03N60S5 Q67040-S4197 03N60	PDF
transistor smd 6.z Abstract: SPN03N60S5 Contextual Info: 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5	PDF
Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197	PDF
Contextual Info: 03N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors	Original	SPN03N60S5 VPS05163 SPN03N60S5 OT-223 03N60S5 Q67040-S4203	PDF
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code	PDF
03N60S5 Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2 Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2	PDF
03n60s5 Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5 Contextual Info: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5	PDF
SPPX4N60S5 Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5 Contextual Info: 03N60S5 03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated	Original	SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5	PDF
SPN03N60S5 Contextual Info: 03N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax 650 V • Optimized capacitances RDS on 1.4 Ω • Improved noise immunity ID	Original	SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 SPN03N60S5	PDF

diode 1538 Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5 diode 1538	PDF
Contextual Info: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5	PDF
Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5	PDF
03n60s5 Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5	PDF
03n60s5 Contextual Info: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 03n60s5	PDF
03N60S5 Abstract: SPN03N60S5 GPS05560 VPS05163 Contextual Info: 03N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors	Original	SPN03N60S5 VPS05163 SPN03N60S5 OT-223 03N60S5 Q67040-S4203 03N60S5 GPS05560 VPS05163	PDF
Contextual Info: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5	PDF
03N60S5 Contextual Info: SIEMENS 03N60S5 03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-T0251 03N60S5 Q67040-S4227 P-T0252 03N60S5	PDF
03n60s5 Abstract: TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 Contextual Info: 03N60S5 03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-TO220-3-1 03N60S5 Q67040-S4184 P-TO263-3-2 SPP03N60S5 03n60s5 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5	PDF
03N60S5 Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5 Contextual Info: 03N60S5 03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 SPU03N60S5 P-TO251-3-1 P-TO252 03N60S5 Q67040-S4227 03N60S5 SPD03N60S5 P-TO251-3-1 P-TO252	PDF

03N60S5 Search Results

03N60S5 Price and Stock

Rochester Electronics LLC SPP03N60S5XKSA1

Rochester Electronics LLC SPD03N60S5BTMA1

Rochester Electronics LLC SPB03N60S5

Infineon Technologies AG SPN03N60S5

Infineon Technologies AG SPP03N60S5HKSA1

03N60S5 Datasheets Context Search

03N60S5

03n60s5

DIODE JS.9 smd

03n60s5

P-TO263-3-2

03N60

transistor smd 6.z

STK and STR integrated circuits

03N60S5

03n60s5

SPPX4N60S5

SPN03N60S5

diode 1538

03n60s5

03n60s5

03N60S5

03N60S5

03n60s5

03N60S5