03NOV09 Search Results
03NOV09 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
VSMG2720
Abstract: VSMG2720-GS08 VSMG2720-GS18
|
Original |
VSMG2720 VSMG2720 11-Mar-11 VSMG2720-GS08 VSMG2720-GS18 | |
VSMG2700
Abstract: VSMG2700-GS08 VSMG2700-GS18
|
Original |
VSMG2700 VSMG2700 11-Mar-11 VSMG2700-GS08 VSMG2700-GS18 | |
VSMF3710-GS18
Abstract: VSMF3710 VSMF3710-GS08
|
Original |
VSMF3710 VSMF3710 18-Jul-08 VSMF3710-GS18 VSMF3710-GS08 | |
stud 180RKI
Abstract: 180A4000 180RKI 181RKI IGD 001
|
Original |
180RKI. 181RKI. O-209AB 2002/95/EC 18-Jul-08 stud 180RKI 180A4000 180RKI 181RKI IGD 001 | |
BPW34 application noteContextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60° |
Original |
VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note | |
BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
|
Original |
VSMF4720 VSMF4720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 lux meter calibration RB94 | |
VSMG2720
Abstract: VSMG2720-GS08 VSMG2720-GS18
|
Original |
VSMG2720 VSMG2720 18-Jul-08 VSMG2720-GS08 VSMG2720-GS18 | |
|
Contextual Info: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability |
Original |
VSMG2720 VSMG2720 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power |
Original |
VSMF9700X01 J-STD-020 VSMF9700X01 AEC-Q101 2002/hay 11-Mar-11 | |
|
Contextual Info: GPP20A thru GPP20M Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability • Meets environmental standard MIL-S-19500 |
Original |
GPP20A GPP20M MIL-S-19500 22-B106 2002/95/EC 2002/96/EC DO-204AC DO-15) DO-204AC, 11-Mar-11 | |
VSMF4720
Abstract: VSMF4720-GS08 VSMF4720-GS18
|
Original |
VSMF4720 VSMF4720 11-Mar-11 VSMF4720-GS08 VSMF4720-GS18 | |
|
Contextual Info: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability |
Original |
VSMG2720 VSMG2720 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability |
Original |
VSMF4710 VSMF4710 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability |
Original |
VSMG2720 VSMG2720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
|
|||
|
Contextual Info: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level |
Original |
180RKI. 181RKI. O-209AB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability |
Original |
VSMF4720 VSMF4720 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability |
Original |
VSMF4710 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
|
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability |
Original |
VSMF4720 VSMF4720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
Original |
VSMF3710 VSMF3710 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level |
Original |
180RKI. 181RKI. O-209AB 2002/95/EC 180RKI 181RKI 11-Mar-11 | |
VSMG2700
Abstract: VSMG2700-GS08 VSMG2700-GS18 IR photodetectors
|
Original |
VSMG2700 VSMG2700 18-Jul-08 VSMG2700-GS08 VSMG2700-GS18 IR photodetectors | |
|
Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60° |
Original |
VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability |
Original |
VSMF3710 VSMF3710 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: 180RKI.PbF, 181RKI.PbF Series Vishay High Power Products Phase Control Thyristors Stud Version , 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level |
Original |
180RKI. 181RKI. O-209AB 2002/95/EC 180RKI 181RKI 2011/65/EU 2002/95/EC. 2002/95/EC | |