ME8604AS7G
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MICRONE
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Non-isolated buck-boost regulator with integrated high-voltage MOSFET, available in multiple variants up to 10W output power, featuring built-in protections, 70kHz maximum switching frequency, and support for various topologies. |
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CBM2904AS8
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COREBAI
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Dual operational amplifier with internal frequency compensation, 100 dB DC voltage gain, wide supply range 3V to 32V, input common-mode voltage range includes ground, output swing from 0V to VCC-1.5V, suitable for battery operation. |
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JMSH1504AS
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Jiangsu JieJie Microelectronics Co Ltd
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150V N-channel Power MOSFET in TO-247-3L package with 4.0 mΩ typical RDS(ON) at 10V VGS, 203A continuous drain current at 25°C, and low gate charge for efficient switching applications. |
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FM25Q04A-SO-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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4M-bit serial flash memory with 2.3V to 3.6V supply, supporting standard, dual, quad SPI and QPI interfaces, 104MHz fast read clock, 128 sectors of 4KB each, and features like XIP, software/hardware write protection, and 64-bit unique ID. |
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CBM2004AS16
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COREBAI
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Seven-channel Darlington transistor array with 500 mA rated collector current per channel, 50 V high-voltage outputs, integrated clamp diodes, and 10.5 kΩ base resistors for direct logic interface. |
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JMSH1504ASQ
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Jiangsu JieJie Microelectronics Co Ltd
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150V 230A N-channel Power MOSFET with 4.0 mΩ RDS(ON) at 10V VGS, TO-247-3L package, designed for automotive applications with low gate charge and high avalanche energy capability. |
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AW86504ASTR
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Shanghai Awinic Technology
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High Sensitivity Micropower Omnipolar Hall-effect Switch |
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LM2904A-S
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3peak Incorporated
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36-V General Purpose Op Amps, Automotive Qualification |
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FM25F04A-SO-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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4M-bit serial flash memory with 2.3V to 3.6V supply, supports SPI and Dual I/O modes, 128 sectors of 4KB each, 256-byte page programming, and features write protection, 64-bit unique ID, and high reliability with 100K program/erase cycles. |
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ME8604AS7G
