04NOV2008 Search Results

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC DIM D 00 P LTR DESCRIPTION DATE DWN APVD C REV PER ECR-08-027811 04NOV2008 IL SY C1 REV PER ECR-12-009459 28MAY2012 CZ SZ .150 DIM M D .130 2 PLC .185 2 PLC C REVISIONS

inverter schematic

Abstract: PMSM stm32 L6390 STM32 STD5NK52ZD-1 STM3210B-EVAL Power INVERTER schematic circuit 3 phase inverter 3phase MOSFET INVERTER
Contextual Info: STEVAL-IHM021V1 100 W 3-phase inverter for speed FOC of 3-phase PMSM motor drive based on the L6390 and STD5NK52ZD-1 Data Brief Features • Input voltage wide range 110 Vac and 230 Vac ■ Maximum power-up to 100 W at 230 Vac input voltage ■ Power MOSFET STD5NK52ZD-1(4.4 A 520 V)

Contextual Info: TDA7479 Single chip RDS demodulator + filter Features • Very high RDS demodulation quality with improved digital signal processing ■ High performance, 57 kHz bandpass filter 8th order ■ FIlter adjustment free and without external components ■ Purely digitaL RDS Demodulation without

STL11NH3LL

Abstract: schematic diagram of energy saving device st marking code JESD97 11NH3L STL11
Contextual Info: STL11NH3LL N-channel 30 V, 0.0078 Ω , 11 A, PowerFLAT 3.3 x 3.3 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL11NH3LL 30 V < 0.0092 Ω 11 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio

D15NF10

Abstract: STD15NF10 75A12 JESD97 STD15NF10T4
Contextual Info: STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type VDSSS RDS on max ID STD15NF10 100 V < 0.065 Ω 23 A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

STM11

Abstract: marking DF DFN-8 STM11C10DF4P28F
Contextual Info: STM11 Power control switch Features • Operating voltage 2.5 V to 5.5 V ■ Supply current of 2.0 µA typ. ■ Low on-resistance P-channel MOSFET: – Continuous drain current 3.7 A – Typical RDS(ON) of 0.065 Ω at 4.5 V ■ Slew rate controlled switching to prevent

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

TMC332-EVAL

Abstract: kt42jm06 24V BIPOLAR STEPPER MOTOR KT42JM06-551 riacon transistor r1009 TMC603 tmc428 eval board v2 R1009 SPEED CONTROL of DC MOTOR using 3 phase bridge co
Contextual Info: TMC332 Evaluation Board Manual Version: 2.10 January 8, 2010 TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg, Germany Phone +49-40-51 48 06 – 0, FAX: +49-40-51 48 06 – 60 http://www.trinamic.com TMC332 Evaluation Board Manual V. 2.10 / January 8, 2010

STM11

Abstract: st mosfet UC 3245 DFN-8 stm111
Contextual Info: STM11 Power control switch Features • Operating voltage 2.5 V to 5.5 V ■ Supply current of 2.0 µA typ. ■ Low on-resistance P-channel MOSFET: – Continuous drain current 3.7 A – Typical RDS(ON) of 0.065 Ω at 4.5 V ■ Slew rate controlled switching to prevent

Contextual Info: STL11NH3LL N-channel 30 V, 0.0078 Ω , 11 A, PowerFLAT 3.3 x 3.3 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL11NH3LL 30 V < 0.0092 Ω 11 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio

ST1S10

Abstract: AN2620 application diagram ST1S10 st c447 STMicroelectronics C447 C3216X7R1475K equivalent diode for C447 C1005X5R1E104K GRM319R71H104KA01 GRM32ER61C226KE20L
Contextual Info: AN2620 Application note 3 A high-frequency synchronous 900 kHz step-down converter based on the ST1S10 Introduction The ST1S10 is a step-down DC-DC converter with an optimized inhibit function for powering high-voltage LCD applications and low-voltage digital core HDD applications. Generally, it

Contextual Info: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ■ Very high frequency inverters, UPS

GY50NC60WD

Abstract: STGY50NC60WD
Contextual Info: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■

uart emulator

Abstract: AN2800 ST232 STM8S
Contextual Info: AN2800 Application note STM8A UART emulator Introduction This application note describes a technique to emulate the universal asynchronous receiver transmitter UART hardware peripheral, through the microcontroller medium end timer (TIMER3), without the use of additional hardware.

ST2N

Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

SPC560B60

Abstract: SPC560B54 SPC560B54x SPC560B64x SPC560B64 spc560b SPC560B64L7 IC ap 4614 Nexus S JTAG pins LQFP176
Contextual Info: SPC560B54x SPC560B60x, SPC560B64x 32-bit MCU family built on the Power Architecture for automotive body electronics applications Data brief Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ High performance 64 MHz e200z0h CPU – 32-bit Power Architecture™ book E CPU

Contextual Info: STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type VDSSS RDS on max ID STD15NF10 100 V < 0.065 Ω 23 A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

15n3l

Abstract: JESD97 STL15N3LLH5
Contextual Info: STL15N3LLH5 N-channel 30 V, 0.0045 Ω, 15 A, PowerFLAT 3.3 x 3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL15N3LLH5 30 V < 0.0054 Ω 15 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

RDS decoder

Abstract: Biphase space decoder TDA7479 TDA7 E-TDA7479AD Tube 4-400 tube fm radio diagram E-TDA7479D JESD97 TSSOP16
Contextual Info: TDA7479 Single chip RDS demodulator + filter Features • Very high RDS demodulation quality with improved digital signal processing ■ High performance, 57 kHz bandpass filter 8th order ■ FIlter adjustment free and without external components ■ Purely digitaL RDS Demodulation without

TSSOP14

Contextual Info: DATA SHEET AS5163 12 BIT AUTOMOTIVE Angle Position Sensor General Description The AS5163 is a contactless magnetic angle position sensor for accurate angular measurement over a full turn of 360°. A sub range can be programmed to achieve the best resolution for the application. It is a system-on-chip,

Contextual Info: DATA SHEET AS5163 14 BIT AUTOMOTIVE Angle Position Sensor General Description The AS5163 is a contactless magnetic angle position sensor for accurate angular measurement over a full turn of 360°. A sub range can be programmed to achieve the best resolution for the application. It is a system-on-chip,

Contextual Info: T H I S DR AW I NG IS UNPUBL I S H E D . DI F F US I ON R E S T R E I N T E _ RELEASED F OR P U B L I C A T I O N LIBRE A L A DI F F U S I O N BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION. LOC IsIONS rev D I ST ALL RIGHTS RESERVED.

94V-0 POLYCARBONATE

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR A BACK HOUSING SUB-ASSEMBLY 1 D DESCRIPTION DATE ECO-13-008665 DWN APVD JM 04JUN2013 SJ MATERIAL: -FRONT HOUSING - POLYCARBONATE, 94V-0 RATED.

GY50NC60WD

Contextual Info: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■