04JAN2007 Search Results
04JAN2007 Datasheets Context Search
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Contextual Info: THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST REVI S IONS FT LTR DI HOUSI NG, OTY: I MATERIAL: THERMOPLASTIC, \ MAY BE COLOR-SEE DESCRIPTION DATE DWN REVISED |
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O-06-013152 07JUN2006 04JAN2007 24AUG2001 24AUG200I 29JUL2004 AR2000 | |
JESD97
Abstract: L100NH3LL STL100NH3LL
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STL100NH3LL JESD97 L100NH3LL STL100NH3LL | |
Contextual Info: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances |
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STW9N150 O-247 | |
LVDS to MIPI DSI
Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
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OT-666 OT-666 LVDS to MIPI DSI MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode | |
STL65N3LLH5Contextual Info: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) |
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STL65N3LLH5 STL65N3LLH5 | |
Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories |
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OT-666 | |
zener B51
Abstract: Zener diode A01
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DSE-451-009 04-Jan-2007 zener B51 Zener diode A01 | |
9N150
Abstract: STW9N150 8A720 JESD97 9n15
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STW9N150 O-247 9N150 STW9N150 8A720 JESD97 9n15 | |
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.4mm Height 19-217/T7D-CS2T2B2/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow |
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19-217/T7D-CS2T2B2/3T SZDSE-197-T19 04-Jan-2007 | |
Contextual Info: STL65N3LLH5 N-channel 30 V - 0.006 Ω - 17 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0075 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark |
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STL65N3LLH5 | |
dsilc6-4xx
Abstract: kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8
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OT-666 dsilc6-4xx kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8 | |
Contextual Info: STL65N3LLH5 N-channel 30 V - 0.0048 Ω - 19 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) |
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STL65N3LLH5 STL65N3LLH5 | |
Contextual Info: STL100NH3LL N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type RDS(on) max ID <0.0035 Ω 25A (1) VDSS ) s ( t c u d o ) r s ( P t c e t u e d l o o r Application s P b e O t e l ) Description o s ( s t b c u |
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STL100NH3LL STL100NH3LL | |
JESD97
Abstract: L100NH3LL STL100NH3LL PowerFLAT
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STL100NH3LL JESD97 L100NH3LL STL100NH3LL PowerFLAT | |
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JESD97
Abstract: L100NH3LL STL100NH3LL
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STL100NH3LL JESD97 L100NH3LL STL100NH3LL | |
Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type VDSS RDS(on) (max) ID STL100NH3LL 30 V <0.0035 Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) |
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STL100NH3LL STL100NH3LL |