05043 Search Results

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

TPQ2222

Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
Contextual Info: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic

ULN2032A

Abstract: driver ULN pnp 2032A uln driver circuit IC 2032A ULN2031A ULN2033 ULN-2033A D 2033A 8 darlington arrays current 3A
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC D • SEM ICO NDS/ IC S 050433fl 0 0 0 3 6 1 2 7 M A L G R 93D 0 3 8 1 2 J ULN-2031A, ULN-2032A, AND ULN-2033A HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS U LN-2031A, ULN-2032A, A N D U LN -20 3 3A H IG H -C U R R E N T D A R L IN G T O N T R A N SIST O R A R R A Y S

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

transistor a1023

Abstract: ULN2083A transistor D 667 C S2083 transistor D 667 S2083H
Contextual Info: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC T3 0504330 D S E M I C O N D S / ICS 0003022 T • ALGR 93 D 03 8 2 2 ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS Five Independent NPN Transistors ■ p \E S IG N E D for use in general purpose, medium

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

PJ99

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. I NC T3 D • 0504336 SEM ICONDS/ IC S 00 0 3 h 0 M 93D 0 ■ ALGR 3> 03604 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VgsioH Limits V BR)GSS Device

Contextual Info: 05043 422ELC DIGITAL PROCESS DATA LINE PROTECTOR APPLICATIONS ✔ RS-422 Data Lines ✔ Digital Process Control Loop ✔ Long Line Digital Systems ✔ Digital Transmission ✔ Telemetry Systems ✔ Smoke Detector & Fire Alarm Systems IEC COMPATIBILITY EN61000-4

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

THC3251A

Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro

VEE25

Abstract: UCN5840A UCN5840LW UCN5841A UCN5842LW UCN5843A allegro 5841 UCN5841ALW
Contextual Info: ALLEGRO MICROSYSTEMS INC blE J> Mt 050433Û QQQbQSl 5841 5S43 • ALGR THRU BiM O S I I 8 -B IT SEBIAL-INPU T, LATC H ED D B IV EB S U C N 5841A - UCN5843A vEE CLO CK S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L DATA OUT STR O B E O U TP U T E N A B LE

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.

transistor a13

Abstract: A13 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt­

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

faa 13

Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • 0504330 0Q03bfi7 Ö ■ T-91-01 PROCESS FAA Process FAA PNP High-Power Transistor Process FAA is a double-diffused epitaxial planar PN P silicon device designed as a high-speed, highcurrent switch and for use in other high-power

Contextual Info: ALLEGRO MICROSYSTEMS'INC 33E H • 0504333 0005543 b Ü I a l SR MOTOR DRIVER The UDS2998V dual full-bridge driver is designed for bidirectional operation of 2-phase stepper motors, a pair of dp servo motors, 2-phase brushless dc motors, or two solenoids at up to 50 V with

Contextual Info: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its

PC001

Contextual Info: 050433Ô GGOSbbè 33E J> MICROSYSTEMS INC 5 6 .1 5 thZji* t* 5 6 1 « : 2-FUNCTION, 4^DIGIT LCD AUTOMOTIVE CLOCKS—PROGRAMMABLE SCL5615HN/HW or SCL5616HN/HW The SCL5615EP/HN/HW and SCL5616EP/HN/HW are 2-function digital automotive clock circuits. Fabricated on a single monolithic chip

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

UDS2983H

Abstract: UDS2983 UDS2981H883 UDS2981H GM003 UDS2982H 84VN
Contextual Info: ALLEGRO MICROSYS TEMS INC 33E D mßu ni.i • jpj ii-.,iiL>iUUiuü> iif iM.il I. ■ 0504338 0005577 0 ■ ÄLGR HIGH-VOLTAGE, HIGH-CURRENT SOURCE DRIVERS Series UDS2980H and UDS2980R hermetically sealed source drivers link standard low-power digital logic and relays, solenoids,

A1058

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 050433A 0003778 0 ■ AL GR T-91-01 PROCESS BKA Process BKA Schottky Diode Process BKA is a silicon high-speed Schottkybarrier junction diode. It has a typical breakdownvoltage rating of 60 V and can operate with a forward

lc 945 transistor

Abstract: transistor LC 945 2N3904 2N3904 F14 4102 transistor 2n3904 TRANSISTOR PNP transistor 4103
Contextual Info: ALLE&RO N I C R OSYSTEMS INC T3D » 0504330 0003733 0 • AL6R PROCESS TVO Process TVO NPN High-Speed Switching Transistor Process TVO is an NPN double-diffused silicon epitaxial planar device with gold diffusion. It is used as a general-purpose switch and amplifier. The PNP

Contextual Info: AL L E G R O MICROSYSTEMS INC » 0504330 0 0 0 3 7 Ô 1 Q I ALGR T-91-01 PROCESS BQB Process BQB Power Schottky Diode P ro c e ss B Q B is a silicon Schottky-barrier diode with a typical breakdown-voltage rating of 45V. D e ­ sign e d for high-power applications, it ca n sustain a