056S443 Search Results

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

AS117-45

Abstract: AD004T2-00 AK006R2-01
Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control

AFM02N5-55

Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Contextual Info: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

AD004T2-00

Abstract: CVE7800-06 CVE7800-12 CVE7800-18 CVE7800-30 CVE7800-36 CVE7800-42 varactor high power 226 varactor
Contextual Info: GaAs Abrupt Varactor Diodes CVE7800 Series Features • Low Series Resistance - High Q ■ Low Capacitance Values for Applications at Millimeter W ave Frequencies ■ Available in Ceramic Packages with Low Parasitics and Also in Die Form Maximum Ratings Description

c1842

Abstract: SMC HF 270
Contextual Info: Ceramic Packaged Surface Mount PIN Diodes SMC1800 Series Features • Industry Standard Outline ■ Hermetically Sealed Ceramic Package ■ Non-Rollable Surface Mount Design ■ Full Face PIN diode Chip Bond ■ For High Performance Switches and Attenuators

SPD3465

Abstract: SPD3510-XX SPD3510
Contextual Info: BÌAlphi Sampling Phase Detectors SPD3465, SPD3471, SPD3472 Series Features • Low Cost Design for Phase Lock ■ Rugged, Modular, Hybrid Construction ■ Phase Locks VCO and DROs up to 20 GHz ■ Wide Frequency Range ■ Available for Oscillator Signal Levels from

Contextual Info: Silicon Hyperabrupt Varactors for General Wide Band Applications EBAJphi CKV2020 Series exDKV6530 Series Features V H F to U H F Operation Guaranteed Minimum Q Values Octave Tuning from 3 to 20 Volts Linear Frequency vs Voltage Characteristics Maximum Ratings

Contextual Info: GaAs MIUIIC SPST FET Switch Low Loss Reflective DC-6 GHz EEQAIph AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz EHAlph AK002D4-11 Features • Designed for Military and Commercial Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Current < 16 mA Total ■ Integral Driver +5V, -5V; CMOS & TTL*

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator EHAlph 3 ,6 ,1 2 ,2 4 dB Bits DC-1 GHz AT001D6-31 Features • 3 ,6 , 12, 24 dB Bits ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements

DSG6474

Abstract: Alpha Industries handling of beam lead diodes DSM6355 DSG6405 DSG6470-06 DSG6470-30 DSG6474-06 Design with PIN diode alpha
Contextual Info: Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 1 5 0 °C Storage Temperature:

AD004T2-00

Abstract: AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS349-12 AH002R2-11
Contextual Info: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on

AS103-59

Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443
Contextual Info: GaAs MMIC Two Watt High Linearity Cellular SPDT Switch AS103-59 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control Voltages ■ Extremely Low Cost

Contextual Info: ALPHA IND / SEMICONDUCTOR MAE D • 0585443 DD03,2G1 DfiD ■ ALP Industry Standard PIN Diode Chips 'T -07-1 s' Features ■ ■ ■ ■ General Purpose PIN Switching Diodes Oxide/Nitride Passivated Series Resistance to 0.4 Ohms Switching Time to 5 ns Types

Contextual Info: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EBAlpha AS373-12 Features • Low Loss <0.5 dB @ 900 MHz ■ Dual Positive Control Logic ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost ■

Contextual Info: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL

Contextual Info: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface

Contextual Info: GaAs 15 dB MMIC FET Voltage Variable Attenuator DC-2 GHz AF002N2-12 Features • Single Voltage Control ■ Low Cost ■ 15 dB Range ■ Very Low DC Dissipation ■ Easily Adapted for Positive Control ■ Non-Reflective Description Absolute Maximum Ratings

AS373-12

Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EBAlpha AS373-12 Features • Low Loss <0.5 dB @ 900 MHz ■ Dual Positive Control Logic ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost ■