05NOV01 Search Results

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L

Contextual Info: I 6 7 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 5 4 2 3 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST F T p 6 4 LTR DESCRIPTION R E V c 1. 2N D RECEPTABLE ACCEPTS THK I . C . L E A D . AN M A T E R IAL = H 0 U 5 I N G - G L A S S

Contextual Info: XT49ML Vishay Dale Quartz Crystals 3.579MHz to 66.0MHz FEATURES • Low profile. • Hermetically sealed. • Tape and reel packaging. STANDARD ELECTRICAL SPECIFICATIONS FREQUENCY RANGE MHz MODE OF VIBRATION ESR MAX. (Ohms) 3.579 - 4.999 5.0 - 5.999 6.0 - 7.999

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. - 1 D 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD J REV ECO-12-019894 12NOV2012 JM SJ J1 REV ECO-14-002629 25FEB2014 JM SJ MATERIAL: JACK HOUSING - POLYCARBONATE, 94V-0 RATED.

PA66-GF20

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2000 2 3 20 01 NOV RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN MATED WITH: PASSEND ZU: LOC 1534127 A3 Wie gezeigt: REVISIONS

Si1304DL

Contextual Info: SPICE Device Model Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

M29W160DB

Abstract: M29W160DT TFBGA48
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

TSOP48 outline

Abstract: M29W160DB M29W160DT TFBGA48 A/M29F010B(45/70/90/MT352/CG/M29W160DT
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W160DB

Abstract: M29W160DT TFBGA48
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

1251 8pin

Abstract: Si9181 Si9181DQ-15-T1 Si9181DQ-18-T1 Si9181DQ-20-T1 Si9181DQ-25-T1 Si9181DQ-28-T1 Si9181DQ-30-T1 Si9181DQ-33-T1 Si9181DQ-50-T1
Contextual Info: Si9181 New Product Vishay Siliconix Micropower 350-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES D D D D D D D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V, or Adjustable Output Voltage Options D Other Output Voltages Available by Special Order

Contextual Info: XT49M Vishay Dale Quartz Crystals 3.579MHz to 66.0MHz FEATURES • Low profile. • Hermetically sealed. • Tape and reel packaging. STANDARD ELECTRICAL SPECIFICATIONS FREQUENCY RANGE MHz STANDARD SPECIFICATIONS Operating Temperature Range: 0°C to + 70°C. (Contact

M29W160DB

Abstract: M29W160DT TFBGA48 CP-26
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W160DB

Abstract: M29W160DT TFBGA48
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

SUB45N03-13L

Abstract: S-05010-Rev
Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L