06AUG07 Search Results

SiA929DJ

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

SIA456DJ

Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: 4 TH IS D R A W IN G IS 2 U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY ^C O ELECTRONICS P U B LIC A TIO N R IG H TS - - R E V IS IO N S RESERVED. G CORPORATION. LT R E2 D E S C R IP T IO N REVISED PER ECR 0 7 - 0 2 2 9 3 2 D APVD JR CLIPPER PER ASTM B152

Contextual Info: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21

marking code vishay SILICONIX

Abstract: SIA915DJ
Contextual Info: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SIA461DJT1GE3

Abstract: 63838 sia461djt
Contextual Info: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package

SiA445EDJ

Abstract: SIA445EDJ-T1-GE3
Contextual Info: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single

Contextual Info: New Product SiA462DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

Contextual Info: GUR5H60, GURF5H60 & GURB5H60 Vishay General Semiconductor Ultrafast Rectifier FEATURES ITO-220AC TO-220AC • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability 2 2 1 1 GUR5H60

Contextual Info: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiA777EDJ Vishay Siliconix N- and P-Channel for Level Shift Load Switch FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2800 V P-Channel 1900 V • 100 % Rg Tested

Contextual Info: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable

Contextual Info: New Product SMMB411DK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow - 20 RDS(on) (Ω) at VGS = - 4.5 V 0.066 RDS(on) (Ω) at VGS = - 2.5 V 0.094 RDS(on) (Ω) at VGS = - 1.8 V

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

mosfet 4800

Abstract: SUB75N06-08
Contextual Info: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiA427DJ

Abstract: SiA427DJ-T1-GE3 SIA427DJ-T1
Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V

Contextual Info: New Product BYD33DGP thru BYD33MGP Vishay General Semiconductor Avalanche Glass Passivated Junction Fast Switching Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Fast reverse recovery time • Low switching losses, high efficiency

SUP85N15-21

Abstract: sup85n15 SUP85N15-21-E3
Contextual Info: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch

VPR220SZ

Contextual Info: VPR220SZ Z-Foil Vishay Foil Resistors Ultra High Precision Z-Foil Surface Mount Power Resistors in TO-220 Configuration with TCR of ± 0.05 ppm/°C, Tolerance to ± 0.01 % and Power Rating to 8 W FEATURES • Temperature Coefficient of Resistance (TCR):

FES8JT-E3/45

Abstract: JESD22-B102D J-STD-002B FES8GT fesf8jt-e3 FES8AT
Contextual Info: FES F,B 8AT thru FES(F,B)8JT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction ITO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2 1 FES8xT • High forward surge capability

BA157GP

Abstract: BA159GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: BA157GP thru BA159GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*