ST1S03APMR
Abstract: schematic diagram dc-dc 12 to 5v/1,5A JESD97 ST1S03A ST1S03AIPMR ST1S03AIPUR ST1S03APUR
Text: ST1S03A 1.5A, 1.5 MHz Adjustable, with inhibit function Step-down switching regulator in DFN6 3x3 Features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100µs
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ST1S03A
200mV
750mA
ST1S03A
ST1S03APMR
schematic diagram dc-dc 12 to 5v/1,5A
JESD97
ST1S03AIPMR
ST1S03AIPUR
ST1S03APUR
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JESD97
Abstract: STS15N4LL
Text: STS15N4LL N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LL 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description
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STS15N4LL
JESD97
STS15N4LL
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STGW40NC60WD
Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Text: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW40NC60WD
O-247
STGW40NC60WD
icl 298
HF IGBT
GW40NC60WD
ic MARKING QG
JESD97
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Untitled
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
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Untitled
Abstract: No abstract text available
Text: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
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STL80N4LL
STL80N4LL
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P75NS04Z
Abstract: No abstract text available
Text: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature
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STP75NS04Z
O-220
P75NS04Z
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ST1S06A
Abstract: 1S0633 ST1S06 ST1S06APUR ST1S06PU12R ST1S06PU33R ST1S06PUR ST1S06XX12
Text: ST1S06xx Synchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed or adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification ■ Inhibit function
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ST1S06xx
ST1S06A
1S0633
ST1S06
ST1S06APUR
ST1S06PU12R
ST1S06PU33R
ST1S06PUR
ST1S06XX12
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ST1S06
Abstract: ST1S06A ST1S06APUR ST1S06PM33 ST1S06PU12R ST1S06PU33R ST1S06PUR ST1S06XX12 ST1S0 dfn 3x3 footprint
Text: ST1S06xx Synchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed or adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification ■ Inhibit function
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ST1S06xx
ST1S06
ST1S06A
ST1S06APUR
ST1S06PM33
ST1S06PU12R
ST1S06PU33R
ST1S06PUR
ST1S06XX12
ST1S0
dfn 3x3 footprint
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Untitled
Abstract: No abstract text available
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •
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STL80N4LLF3
STL80N4LLF3
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gp10nc60k
Abstract: RG 2006 10A 600V JESD97 STGB10NC60K STGB10NC60KT4 STGD10NC60K STGP10NC60K
Text: STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K STGD10NC60K 600V 600V 600v <2.5V <2.5V <2.5V 10A 10A 10A
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STGB10NC60K
STGD10NC60K
STGP10NC60K
O-220
STGB10NC60K
O-220
gp10nc60k
RG 2006 10A 600V
JESD97
STGB10NC60KT4
STGD10NC60K
STGP10NC60K
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STL80N4LLF3
Abstract: JESD97 L80N4LLF3 st MARKING E4
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
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STL80N4LLF3
STL80N4LLF3
JESD97
L80N4LLF3
st MARKING E4
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Untitled
Abstract: No abstract text available
Text: ST1S03A 1.5 A, 1.5 MHz adjustable, with inhibit function step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100 µs
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ST1S03A
ST1S03A
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P75ns04z
Abstract: STP75NS04Z JESD97
Text: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature
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STP75NS04Z
O-220
P75ns04z
STP75NS04Z
JESD97
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Untitled
Abstract: No abstract text available
Text: ST1S03A 1.5A, 1.5 MHz Adjustable, with inhibit function Step-down switching regulator in DFN6 3x3 PRELIMINARY DATA General features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Internal soft start for start-up current limitation
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ST1S03A
200mV
750mA
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STEP-DOWN SWITCHING REGULATOR IN DFN6
Abstract: No abstract text available
Text: ST1S06 Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3 General features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Synchronous rectification
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ST1S06
typ150m
STEP-DOWN SWITCHING REGULATOR IN DFN6
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Untitled
Abstract: No abstract text available
Text: ST1S03A 1.5 A, 1.5 MHz adjustable, with inhibit function step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DCDC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100 µs
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ST1S03A
ST1S03A
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diode met st
Abstract: Vdss 1500V
Text: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching
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STFV4N150
O-220FH
O-220
O-220FH
diode met st
Vdss 1500V
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ST AN2349 PFC
Abstract: N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode
Text: AN2349 Application note Simple cost-effective PFC using Bipolar Transistors for low-to-medium power HF Ballasts Introduction This note deals with the implementation of a Power Factor Correction PFC in a Discontinuous-mode Boost Converter where a PFC stage is achieved with a power bipolar
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AN2349
ST AN2349 PFC
N27-E20
an2349
ptc c884
ba159 st make
e20 220v
EF20 TRANSFORMER
EFD25/13
Voltage Regulator Circuit e20 220v
200V Zener Diode
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TSOP48 outline
Abstract: AI-0065 st 339 TSOP32 TSOP56 TSOP*56 pd0003 TSOP56 Package Tape
Text: PD0003 Packing information Thin Small Outline packages for memory products Tape and Reel shipping media Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.
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PD0003
330mm
TSOP48 outline
AI-0065
st 339
TSOP32
TSOP56
TSOP*56
pd0003
TSOP56 Package Tape
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FV4N150
Abstract: JESD97 STFV4N150
Text: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching
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STFV4N150
O-220FH
O-220
FV4N150
JESD97
STFV4N150
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Untitled
Abstract: No abstract text available
Text: 4 TH 1S DRAW 1NG C 3 I S UNPUBL 1S H E D . C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC REVISIONS D I ST R E SE RV ED. P LTR D E S C R 1P T 1ON DATE RELEASE TO A CT I VE A 06JUN2006
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06JUN2006
2DEC2005
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TE 108-18717
Abstract: 114-18387 0-1241388-2 ECR-11-007727
Text: T H I S DRA W IN G I S U N P U B L I S H E D . VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C R E L E A S E D FOR P U B L I C A T I O N FREI FUER VEROEFFENTLICHUNG ALL R IG H T S R E S E R V E D . AII F RFCHTF VDRRFHAI TFN. C OP Y R I G H T 2005 200S MATED WITH:
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ECR-11-007727
APR2011
TE 108-18717
114-18387
0-1241388-2
ECR-11-007727
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC RESERVED. R E V ISIONS DIST 00 GP LTR DESCRIPTION DATE DWN APVD R E V PE R ECO - 0 8 - 0 0 8 0 3 5 08APR2008 RG PD R E V PE R E C O - 0 8 - 0 1 6 2 8 7
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08APR2008
020CT2008
UL94V-0
JUN2006
3IMAR2000
P2-S24-PI2
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC RESERVED. CE REV ISIONS D I ST 00 LTR DE S C R I P T I O N 06J1JN2006 R E L PER NPR 0 6 - 0 4 6 5 * DWN DATE EJH APVD DB MATER I A L :
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06J1JN2006
MAR200Ã
JUN2006
06JUN2006
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