07MAR2008 Search Results

Contextual Info: STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ) s ( ct du 3 Applications 1 ■ High frequency inverters

TRIAC BTB 16 600 BW

Abstract: triac bta06 Z0405 equivalent TRIAC BTA 16 600b Z0409 equivalent OPTO TRIAC TRIAC BTB 12.600 data sheet Triacs equivalent TRIAC inductive reference book on triacs
Contextual Info: AN439 Application note Snubberless and logic level TRIAC behavior at turn-off Introduction The use of TRIACs is limited by their switching behavior. Indeed, there is a risk of spurious triggering after conduction if the slope of the decreasing current is too high, and/or if the

GD18N40LZ

Abstract: GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1
Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

vogt transformer s3

Abstract: l6562 flyback led design bz84c l6562 flyback design L6562 TL431 dali master schematic l6561 flyback pfc led schematic diagram ac-dc inverter l6562 isolated flyback l6562
Contextual Info: AN2708 Application note 2X36 W digital dimmable ballast with L6574 and ST7FDALI Introduction This document describes a high-efficiency, high power factor, low THD and digital dimming electronic ballast designed to drive 2X36 W T8 tube lamps. The system consists of three main blocks:

Contextual Info: ST72361xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

TIP35C

Abstract: TIP36C to-247 TIP36C st marking code TIP36C morocco tip35c equivalent TIP35C equivalents TO-218 Package Transistor 150 A pnp JESD97
Contextual Info: TIP35C TIP36C Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 1 Description The devices are manufactured in epitaxial-base planar technology and are suitable for power

GP30NC60K

Abstract: JESD97 STGB30NC60K STGB30NC60KT4 STGP30NC60K
Contextual Info: STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ High frequency inverters ■ Motor drivers

JESD97

Abstract: ST1S03 ST1S03PU ST1S03PUR
Contextual Info: ST1S03 1.5 A, 1.5 MHz adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DC-DC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for START-UP current limitation and power on delay of 50-100 µs ■

GB18N40LZ

Abstract: GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4
Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

vfqfpn-32

Abstract: VFQFPN32 L6733 L6733TR
Contextual Info: L6733 Advanced modular synchronous PWM controller Data Brief Features • High current embedded drivers with programmable supply voltage ■ Operative supply voltage range: 4.5 V to 16 V with selectable UVLO threshold ■ Adjustable output voltage: 0.6 V reference

W435

Abstract: atx 220 corrugated box spec
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. R E V IS IO N S DW LTR B DESCRIPTION REVISED E C R - 0 8 - 0 1 1573 DATE DWN APVD 07MAY08 SC WK D D 13.2 NOTES: 1. MATERIAL: 1.1 HOUSING: THERMOPLASTIC(PBT), U L94V-0;

TIP36C morocco

Abstract: TIP36C TIP35C equivalents TIP35C tip35c equivalent JESD97 TIP36C to-247
Contextual Info: TIP35C TIP36C Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio amplifier 3 2 1 TO-247 Description The devices are manufactured in planar

GW30NC60KD

Abstract: STGW30NC60KD p21xc JESD97
Contextual Info: STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode

GB18N40LZ

Abstract: GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4
Contextual Info: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

TIP35CW

Abstract: TIP36CW
Contextual Info: TIP35CW TIP36CW Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 1 Description The devices are manufactured in epitaxial-base planar technology and are suitable for power

INVERTER 10kW

Abstract: LQFP32 LQFP44 LQFP64 ST72361 ST7261
Contextual Info: ST72361xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

Contextual Info: M95160-W4 M95160-W3 16 Kbit serial SPI bus EEPROM with high speed clock Custom data Features • Compatible with SPI bus serial interface positive clock SPI modes ■ Extended operating temperature range: – Device grade 3: –40 °C to +125 °C – Device grade 4: –40 °C to +145 °C