08MAR2005 Search Results

AN1995

Abstract: M25P10-A ufdfpn8
Contextual Info: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features • 1 Mbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (1 Mbit) in 1.7 s (typical) ■ 2.3 to 3.6 V single supply voltage

ISD12A

Abstract: JESD97 S12NH3LL STS12NH3LL
Contextual Info: STS12NH3LL N-channel 30V - 0.008Ω - 12A - SO-8 Ultra low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID STS12NH3LL 30V <0.0105Ω 12A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Switching losses reduced ■ Low input capacitance ■

W25NM50N

Abstract: p25nm50n B25NM50N f25nm50n
Contextual Info: STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 21.5 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @TjMAX ID STB25NM50N-1 STF25NM50N STP25NM50N

B25NM50N

Abstract: p25nm50n
Contextual Info: STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @TjMAX ID STB25NM50N-1 STF25NM50N STP25NM50N

W25NM50N

Abstract: p25nm50n B25NM50N f25nm50n
Contextual Info: STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @TjMAX ID STB25NM50N-1 STF25NM50N STP25NM50N

F25NM50N

Abstract: P25NM50N W25NM50 W25NM50N STMicroelectronics DIODE marking code STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N
Contextual Info: STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM50N 550V <0.140Ω 22A STB25NM50N-1 550V <0.140Ω

Contextual Info: STM705, STM706 STM707, STM708, STM813L 5 V supervisor Datasheet - production data • 200 ms typ trec  Watchdog timer - 1.6 s (typ) 8  Manual reset input (MR)  Power-fail comparator (PFI/PFO) 1  Low supply current - 40 A (typ)  Guaranteed RST (RST) assertion down to

STM705

Abstract: STM706 STM707 STM708 STM813L st mar 705
Contextual Info: STM705, STM706 STM707, STM708, STM813L 5 V supervisor Features • 5 V operating voltage ■ Precision VCC monitor – STM705/707/813L – 4.50 V ≤ VRST ≤ 4.75 V – STM706/708 – 4.25 ≤ VRST ≤ 4.50 V 8 1 SO8 M ■ RST and RST outputs ■ 200 ms (typ) trec

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. MECHANICAL: D \ c + .015 .660 - . 0 0 0 ELECTRICAL: 426 SERIES MAGNETIC CIRCUIT Q O' CL + .015 -.000 Q O' O O' 0.O62 2X 0.1 2 6 (2X )

AN1995

Abstract: M25P M25P10-A marking 2S8
Contextual Info: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features „ 1 Mbit of Flash memory „ Page Program up to 256 bytes in 1.4 ms (typical) „ Sector Erase (256 Kbit) in 0.65 s (typical) „ Bulk Erase (1 Mbit) in 1.7 s (typical) SO8 (MN) 150 mil width

0425-205-0000

Abstract: 0425-015-0000
Contextual Info: R E V 1S I O N S REV NC 0460-204-12H SYM NC D E S C R 1 P T 1O N DATE APPROVED NEW RELEASE PER E.O. PI8855 . 1 4. FOR CONTACT PERFORMANCE AND APPLICATION CHARACTERISTICS SEE DRAWING 0425-015-0000. SIGNATURE 3. 2. FOR CRIMPING INFORMATION SEE DRAWING 0425-205-0000.

MAG45

Abstract: IEC60825-1
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA DIST R E V IS IO N S 22 LTR DESCRIPTION B .850 DATE ECO —05 —01 3676 DWN APVD CG DH IN O V 2 0 0 5 MAX MECHANICAL:

F25NM50N

Contextual Info: STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS @TjMAX ID STB25NM50N-1 STF25NM50N STP25NM50N

W25NM50N

Abstract: f25nm50n p25nm50n B25NM50N STP25NM50 STF25NM50N STW25NM50N STB25NM50N
Contextual Info: STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE VDSS @TjMAX ID STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N

12H3LL

Abstract: tc100 le 12h3l JESD97 STS12NH3LL
Contextual Info: STS12NH3LL N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID STS12NH3LL 30 V <0.0105 Ω 12 A • Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Switching losses reduced ■ Low input capacitance

12H3LL

Contextual Info: STS12NH3LL N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID STS12NH3LL 30 V <0.0105 Ω 12 A ) s ( t c u d o ) r s ( P t Application c e t u e d l o o r s Description P b e O t e l ) o s

B25NM50N

Abstract: W25NM50N F25NM50N p25nm50n STP25NM50N STB25NM50N STB25NM50N-1 STF25NM50N STW25NM50N p25nm50
Contextual Info: STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE VDSS @TjMAX ID STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N

AN1995

Abstract: VDFPN8 package M25P10-A vdfpn8
Contextual Info: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features • 1 Mbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (1 Mbit) in 1.7 s (typical) ■ 2.3 to 3.6 V single supply voltage

AN1995

Abstract: M25P10-A ST10
Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (256 Kbit) in 0.8s (typical) Bulk Erase (1 Mbit) in 2.5s (typical)

STS12NH3LL

Contextual Info: STS12NH3LL N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET Figure 1: Package Table 1: General Features TYPE STS12NH3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.0105 Ω 12 A TYPICAL RDS(on) = 0.008 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V

STS12NH3LL

Contextual Info: STS12NH3LL N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STS12NH3LL • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 30 V < 0.0105 Ω 12 A TYPICAL RDS(on) = 0.008 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V

MAG45

Abstract: 6605424-1
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 6 5 - ALL RIGHTS RESERVED. By - MECHANICAL: .850 MAX 645 .oj > D .105 .145 + .010 C .425 .660 ELECTRICAL: 426 SERIES MAGNETIC CIRCUIT + .0 1 5 -.0 0 0 3\ / 5 0.O62 2X Û o: cl © Q a: -.0 0 0

W25NM50N

Abstract: p25nm50n B25NM50N F25NM50N B25NM50N-1 p25nm50 STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N
Contextual Info: STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM50N 550V <0.140Ω 22A STB25NM50N-1 550V <0.140Ω

JESD97

Abstract: S12NH3LL STS12NH3LL ISD12A
Contextual Info: STS12NH3LL N-channel 30V - 0.008Ω - 12A - SO-8 Ultra low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STS12NH3LL 30V <0.0105Ω 12A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Switching losses reduced ■ Low input capacitance