08MAX Search Results

K2040

Abstract: 2SK807
Contextual Info: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-M O S F E T Package Dimensions • Features • Low ON resistan ce Rds on : R ds (on) = 1.1ft (typ.) Unit: mm • High sw itching ra te : tf= 7 0 n s (typ.) 5.2max. 15.5max • No secondary breakdow n

Contextual Info: HB561008 Series 262,144-word x 8-bit Dynamic Random Access Memory Module The H B 5 6 1 0 0 8 A R / B is a 2 M dynam ic random-access m em ory module organized as 262,144 x 8 bits in a 30-pin single in-line package com prising eight H M 5 0 2 5 6 C P , 262,144 x 1 bit dynam ic R A M s in 18-pin Plastic

THM92500AS80

Abstract: TC514256Aj THM92500AS
Contextual Info: T H M 9 2 5 0 0 A S - 7 0 , 80, 262,144 WORDS x 9 BIT DYNAMIC RAH MODULE ' d e s c r ip t io n The 7KM92500AS is a 262,144 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514256AJ and 1 pcs of TMM51256T on the printed circuit board. The THM92500AS is optimized for application to the systems which are required high

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

2SK1223

Contextual Info: Power F-MOS FET 2SK1223 2SK1223 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R d s on : R DS (on) 1 = 0 .0 2 il (typ.) Unit: mm • High switching ra te : t( = 350ns (typ.) 5.3max. 20.5max. 3.0- • No secondary breakdown

Contextual Info: XC3020B Military Logic Ceil Array Product Specification. S ee Note 1. FEA TU R ES Part Number Logic Capacity gates Configurable Logic Blocks User l/Os XC3020 2000 64 64 • M IL-S T D -883 Class B Processing. Complies with paragraph 1.2.1 • Field-programmable gate array

network resistor

Abstract: SC5202 RESISTOR NETWORK BI L
Contextual Info: T H I C K F I L M NETWORK THICK FILM • NETWORK RESISTOR RESISTOR FEATURES Miniature, high density assembly. Stable electrical capability, high reliabil Combinations of different ohmic va lue are avai lable * wifi'J^ftlæffl^û HOW TO 08 A ORDER 4 7 2 / BPïËft^

ECG1055

Abstract: T-77-05-07 ECG1036 AM radio 30jUV AM TRANSISTOR RADIO RECEIVER
Contextual Info: PHILIPS E C G INC 17E bhSBTSa D FM/AM-IF AMPLIFIER AND AM CONVERTER The ECG1055 is a monolithic integrated circuit designed as a combined FM/AM-IF amplifier and AM converter for use in high performance FM/AM radio receivers. The device is equipped with a built-in bias

Contextual Info: m g C C R A/ew Concepts in Capacitors • V MATSUO since 1949 SOLID TANTALUM CAPACITORS TANCHIP" SERIES Type 269 ZZZZ* Epoxy resin molding TYPE 269 is built-in fuse tantalum chip capacitors Suitable for filtering of supply with low im pedance circuit and bypassing of

SJ111288

Contextual Info: m i w s c o n 6.5 ±0.2 □Ik UJ 1 ± 0.1 0.8 ±0.1 1.4 ±0.1 4. 65 ± 0 .12 DETAIL OF SMT TERMINAL SHAPE 19-0.15 ±0.03 < y- 0 . 12 M B A . 0.3 ±0.1 (STRAIGHT AREA) 0.48 ±0.1 (RADIUS END) <Ri>K») 0 .3 ±0.1 (STRAIGHT AREA) UM/-H&P) 0 .5 ±0.1 (RADIUS END) (Ri>K»)

TC5118160

Abstract: TC51181
Contextual Info: TOSHIBA THM3210BQAS/ASG-70 PRELIMINARY 1,048,576 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM3210B0AS/ASG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118160AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 16 bits dynamic RAM module, by

Contextual Info: 10 NOTES 1. A2 A ^ S f t / 2 M A T E R IA L : ^ bbb ^ 'j v - (l c p W A F E R : LIQ UID C R Y S T A L P O L Y M E R UL94-V-0 (C O LO R:B LACK) 4. (G L A S S F IL L E D ) Mn O A f ^ ( t = 0 .1 2 ) : 501527 > U- X M A T E W ITH : 5 0 1 5 2 7 S E R IE S .