08NOV Search Results

Contextual Info: 4 RELEASED ROR PUBLICATION TH IS DRAWING IS U N P U B LIS H E D . C COPYRIGHT 19 2 3 BY AMP INCORPORATED. ,19 LOC A LL RIGHTS R E S E R V E D . CE REVISIONS D IS T 17 D ESC R IPTIO N A REV PER EC 0 A 0 0 —0 4 5 1 —01 ADB 08NOVO D 1. MAXIMUM INSERTION LOSS: 0 .5 d B RANOOM MATE

Contextual Info: 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR L A REF B SPACES A V y V y 1 _ TV TV TV y \ 2.54 [.1 0 0 APVD BSV JLG 08NOV05 THE NOTED DIMENSIONS APPLY AT THE INTERSECTION OF THE POST AND THE HOUSING

Contextual Info: 4 TH IS DRAWING IS 2 4 U N P U B L IS H E D . RELEASED FOR PUBLICATION NOV ,2011- R E V IS IO N S ALL RIGHTS RESERVED. 201 1 By Tyco E le c tro n ic s Ja p a n G.K. P LTR D E S C R IP TIO N A DATE RELEASED DWN 08NOV2011 D APVD O COPYRIGHT CD T.K D ± 0.05

EIA-364-66

Contextual Info: Product Specification 108-2169-1 08Nov07 Rev A Metal Shell Micro Circular Connector System 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Gigabit Ethernet Threaded version of the Metal Shell Micro Circular Connector System. This system is used

microsd adapter

Contextual Info: 107-68717 Packaging Specification 08Nov07 Rev C MICRO SD ADAPTER 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MICRO SD ADAPTER. 订定 MICRO SD ADAPTER. 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

Contextual Info: 8 TH IS DRAWING 7 15 U N P U B LIS H E D . RELEASED FOR 2 3 PUBLICATION A L L RIGHTS COPYRIGHT 4 LOC RESERVED. CM BY TYCO ELECTRONICS CORPORATION. D IS T R E V IS IO N S LTR C1 D E SC RIPTIO N REVISED PER DATE 08NOV05 E C O -0 5 -0 1 2730 DWN APVD KW DB 2.16+0.25

network analyzer connector 7 mm

Abstract: 7 mm connector network analyzer cat 5e cable EIA-568-B-2
Contextual Info: 501-664-1 Qualification Test Report 08Nov07 Rev A Metal Shell Micro Circular Connector System 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Metal Shell Micro Circular Connector System to determine its conformance to the requirements of Product Specification 108-2169-1 Revision A.

Contextual Info: OBSOLETE 4 PERMITTED FLASH 0.01 INCH MAX Y3 ADDED NOTE 4 AND OBSOLESCENCE OF P/N 1 280358 0 & 1 280359 0 SP 08NOV 2012 Y3

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 1.00 1 20 REVISIONS ALL RIGHTS RESERVED. BY - 5.08 2 3 P 2.54 0.05 0.02 LTR A 0.02 DESCRIPTION DATE REVISED PER ECO-13-017516 DWN APVD KH 08NOV2013 MB 3.31 REF D D 22.1 1 C MATERIALS AND FINISH

SUP90P06-09L

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

2060CT

Contextual Info: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: MBR F,B 735 thru MBR(F,B)760 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

2-1926736-3

Abstract: DVSB DC DC Converter SNP-OP-BOARD-01 PFE1100 2-1926733-5 784p Power-On ps_kill
Contextual Info: PFE1100-12-054NA Short Form Data Sheet 1100 Watts, 12 VDC Output Features • • • • • • • • • • Best-in-class, 80 PLUS certified “Platinum” efficiency Wide input voltage range: 90-264 VAC AC input with power factor correction Always-On 16.5W programmable standby output 3.3/5 V

IRFD9024

Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion

STP13NM60

Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N

MBR1550CT

Abstract: Diode MBR 1045 MBR1535
Contextual Info: MBR F,B 1535CT thru MBR(F,B)1560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

mbr304

Contextual Info: New Product MBR F,B 3035CT & MBR(F,B)3045CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

3035CT

Abstract: 3045CT MBR3035CT MBR3045CT MBRB3035CT MBRF3035CT MBRF3045CT diode 1
Contextual Info: New Product MBR F,B 3035CT & MBR(F,B)3045CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

IRLD120

Contextual Info: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion

IRLZ24L

Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Contextual Info: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive

Contextual Info: M24SR64-Y Dynamic NFC/RFID tag IC with 64-Kbit EEPROM, NFC Forum Type 4 Tag and I²C interface Datasheet - production data Package • 8-lead small-outline package SO8 ECOPACK 2 SO8 (MN) UFDFPN8 (MC) TSSOP8 (DW) • TSSOP8 ECOPACK®2 • UFDFPN8 ECOPACK®2

Device Orientation

Abstract: device QFN12 QFN-12 QFN16 QFN-16 qfn 12
Contextual Info: Device Orientation Vishay Siliconix Device Orientation for QFN-12/QFN-16 DEVICE ORIENTATION PACKAGE METHOD QFN-12 T1 QFN-16 T1 User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification-PACK-0007-15 Document Number: 72725

IRL640S

Abstract: SMD-220 S10 SMD MARKING
Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition