09-5 DIODE Search Results
09-5 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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09-5 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3.7V Li-Ion battery charge controller
Abstract: gsm mobile jammer GM862-QUAD Cell Phone Jammers project kit diode C726 Molex 53748-0504 jammer gsm gsm mobile jammer using microcontroller mobile jammer diode C725
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GM862-QUAD GM862-QUAD-PY, 1vv0300748 3.7V Li-Ion battery charge controller gsm mobile jammer Cell Phone Jammers project kit diode C726 Molex 53748-0504 jammer gsm gsm mobile jammer using microcontroller mobile jammer diode C725 | |
gsm mobile jammer using microcontroller
Abstract: gsm modem sim 300 interface with microcontroller EXAMPLE FOR SEND DATA BY GPRS jammer of sar gsm mobile jammer construction of subscriber identity module RJ11 6 pin connector cell phone jammer mobile phone jammer circuit operation sim 300 processor gsm modem for project
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EZ10-QUAD-PY 80269ST10024a gsm mobile jammer using microcontroller gsm modem sim 300 interface with microcontroller EXAMPLE FOR SEND DATA BY GPRS jammer of sar gsm mobile jammer construction of subscriber identity module RJ11 6 pin connector cell phone jammer mobile phone jammer circuit operation sim 300 processor gsm modem for project | |
SID01-03
Abstract: SIE01-01
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SID01-01 SID01-03 SID01-06 SID01-09 SIDSIE01-03 SIE01-06 SIE01-09 SIE01-12 ERE51-01 ERE51-03 SIE01-01 | |
P30-P33
Abstract: P2M TRANSISTOR
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ZLR64400 P30-P33 P2M TRANSISTOR | |
LM1575
Abstract: 5962-9167201QEA
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MNLM1575-X-5 LM1575 J16ARL KA04BRA 5962-9167201QEA | |
MX25L6406EM2I-12G
Abstract: MX25L6406 25l6406e MX25L6406E MX25L6406EMI-12G MX25L6406EM MX25L6406em2 mxic mx25l6406e MX25L6406EZNI-12G mx25l6406em2i
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MX25L6406E PM1577 MX25L6406EM2I-12G MX25L6406 25l6406e MX25L6406E MX25L6406EMI-12G MX25L6406EM MX25L6406em2 mxic mx25l6406e MX25L6406EZNI-12G mx25l6406em2i | |
Contextual Info: MX25L6408E MX25L6408E DATASHEET P/N: PM1643 1 REV. 1.4, DEC. 09, 2013 MX25L6408E Contents FEATURES. 5 |
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MX25L6408E PM1643 | |
Contextual Info: GBI25A . GBI25M GBI25A . GBI25M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2014-09-09 ±0.2 2.2 11 ±0.2 20 ±0.2 Type Typ 5 ±0.2 3.6 2.7 1.0 10 ±0.2 4.6 ±0.2 Nominal current Nennstrom 50.1000 V Plastic case Kunststoffgehäuse |
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GBI25A GBI25M UL94V-0 E1754 GBI25K 12a-1v) | |
Contextual Info: GBI20A . GBI20M GBI20A . GBI20M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2014-09-09 ±0.2 2.2 11 ±0.2 20 ±0.2 Type Typ 5 ±0.2 3.6 2.7 1.0 10 ±0.2 4.6 ±0.2 Nominal current Nennstrom 50.1000 V Plastic case Kunststoffgehäuse |
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GBI20A GBI20M UL94V-0 E1754 GBI20K 10a-1 | |
MX25L3255DXCI-10G
Abstract: MX25L3255D MX25L3255 MX25L3255DXCI MXIC MX MX25L3235D IN3064 24ball-BGA MX d 368 MX25L3255DXCI-10
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MX25L3255D PM1431 MX25L3255DXCI-10G MX25L3255D MX25L3255 MX25L3255DXCI MXIC MX MX25L3235D IN3064 24ball-BGA MX d 368 MX25L3255DXCI-10 | |
alu 74F382
Abstract: F381 F382 MC74F382 MC74FXXXDW
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DL121CH4 MC74F382 MC54/74F382 MC54/74F382 alu 74F382 F381 F382 MC74F382 MC74FXXXDW | |
transistor 808
Abstract: 808 nm 1000 mw
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MIL-PRF-19500 Ratio-150% transistor 808 808 nm 1000 mw | |
rtl8111* Reference
Abstract: KB910QF ICH8M 676 ICS9LP505 .s79 antenna switch foxconn MS14141 R5C832 RT9173BPS 0821c
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MS-1313 TPS51120 25VRUN APL5913 965GM-1 965GM-2 965GM-3 965GM-4 965GM-5 965GM-6 rtl8111* Reference KB910QF ICH8M 676 ICS9LP505 .s79 antenna switch foxconn MS14141 R5C832 RT9173BPS 0821c | |
Contextual Info: 66099 RADIATION TOLERANT TO-5 OPTOCOUPLER MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/09/03 Features: Applications: • • • • • • • • • Meets or exceeds MIL-PRF-19500 radiation requirements Current Transfer Ratio-150% typical 1kVdc electrical input to output isolation |
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MIL-PRF-19500 Ratio-150% | |
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IR7309
Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
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MAX1640 MAX1641 MAX1640EEE+ MAX1641C/D MAX1641EEE+ MAX1640C/D MAX1641) MAX1640) 16-Pin IR7309 EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE | |
SK30GH123Contextual Info: SK30GH123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 .D : # 3 ;9 4 0/ : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK30GH123 SK30GH123 | |
SK30GD123Contextual Info: SK30GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK30GD123 SK30GD123 | |
SK30GH123Contextual Info: SK30GH123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 .D : # 3 ;9 4 0/ : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK30GH123 SK30GH123 | |
SK20GD123Contextual Info: SK20GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 0. : # 3 ;9 4 8/ : .9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK20GD123 SK20GD123 | |
diode 5cContextual Info: SK10GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 8- : # 3 ;9 4 88 : 8- : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 8; : # 3 ;9 4 80 : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK10GD123 diode 5c | |
SK30GD123Contextual Info: SK30GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK30GD123 SK30GD123 | |
SK20GD123Contextual Info: SK20GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 0. : # 3 ;9 4 8/ : .9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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SK20GD123 SK20GD123 | |
SK30GD123
Abstract: SK30
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SK30GD123 SK30GD123 SK30 | |
Contextual Info: High -P erf or manc e Dr BL AD E 5 mm x 5 mm x 0.6 mm IQFN TD A21 310 Dat a She et Revision 2.1, 2013-09-05 Po wer Ma nage m ent and M ulti M ark e t Edition 2013-09-05 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG |
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TDA21310 LG-UIQFN-32-2 |