09MAY05 Search Results

Contextual Info: r 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ R E V IS IO N S DIST 16 LTR DESCRIPTION RELEASED PER EC 0 S 1 4 - Q 1 6 1 - 0 5 DATE DWN APVD 09M AY05 BM JL 1\ P O L Y E S T E R , PBT, BLACK, P E R M I L - M - 2 4 5 1 9 .

ic MARKING QG

Contextual Info: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5

ic MARKING QG

Abstract: TB-17 SUR50N025-05P
Contextual Info: SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS

SUU50N025-05P

Abstract: ic MARKING QG TB-17
Contextual Info: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS

sud*50n025-06p

Abstract: SUD50N025-06P-E3
Contextual Info: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5

c0730

Contextual Info: c a t a l S cT W I M I C R O SWI TCH I mm* « wwwm tmm [ Ï ] EX-Q800 SWITCH - ENCLOSED MMMOT. MMH I S R nin ^ - »««a* F E D . M FR . CODE 3.66 Oi-O 30- •MT6 HOLE ANO SLOT FOR .2 9 0 DIA SCREW -HOLE FOU « a 10 PAN HEAO SCREW • ± .0 0 8 2.750-

Contextual Info: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5

sud*50n025-06p

Abstract: SUD50N025-06P SUD50N025-06P-E3
Contextual Info: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5

EXD-Q26-2

Abstract: J780 DT-2R-A7 AK 2015
Contextual Info: MICRO SWITCH FREEPORT IL L IN O IS A OF D IV IS IO N FCO. M FG . C A T A L O G L IS T IN G U S A SWITCH-ENCLOSED HONEYW ELL MTG HOLE AND SLO T FOR . 2 5 0 DIA SCREW EXD-Q2 6 - 2 HOLE FOR NO. 10 PAN HEAD SCREW 6 5.250 ±.030 COOK 3.660±.0302.750 ±.008-

Contextual Info: 173D Vishay Sprague TANTALEX Solid-Electrolyte Capacitors, Axial-Leaded, Molded-Case FEATURES • Miniature axial-lead capacitors available in 5 sizes • Precision molded in gold colored, flame retardant, thermosetting epoxy resin • Laser marked for improved legibility and tapered end of

173D107X9020Y

Contextual Info: 173D Vishay Sprague TANTALEX Solid-Electrolyte Capacitors, Axial-Leaded, Molded-Case FEATURES • Miniature axial-lead capacitors available in 5 sizes • Precision molded in gold colored, flame retardant, thermosetting epoxy resin • Laser marked for improved legibility and tapered end of

MLP33-10

Abstract: MLP44-16 SiP2213 SiP2213DLP-AA-T1 SiP2213DMP-XZ-T1
Contextual Info: SiP2213 New Product Vishay Siliconix Dual Output Low Dropout Regulator FEATURES D D D D D D D D APPLICATIONS 2.25-V to 5.5-V Input Voltage Range Two Outputs − 150 mA and 300 mA Low Ground Current Open Drain Driver Output POR Current Limit Thermal Shutdown

Contextual Info: MICRO SWITCH F R £ E °0*T ILLINOIS A OF D»V>S»ON EXD-Q-3 C A T A L O G LIS T IN G SWITCH-ENCLOSED U S A HONEYWELL FCO MFG- COOC •MTG HOLE AND SLOT FOR 250 DIA SCREW 3 .6 6 0 Jb.0 3 0 ■HOLE FOR NO. 10 PAN HEAD SCREW S 2 .7 5 0 1 .0 0 8 - .5 3 - »

TB-17

Contextual Info: SUU50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

33-Df

Abstract: EX-Q800
Contextual Info: c a t a l S cT W M I C R O SWI TCH « nmsh> * km um w mm WWW. MMÜ I B ! F E D . M F » . COOC EX-Q800 SWITCH - ENCLOSED fjg | R nin ^ - »««S * . 3 6 6 0± -0 3 0 -MT6 HOLE ANO SLOT FOR .2 9 0 DIA SCREW -HOLE FOI* « » .IO PAM HEAO SCREW « - ± .0 0 8

EX-N15

Abstract: 1032L U-173
Contextual Info: " S 3 âl8î TS t!n? M I C R O SWITCH SWITCH“ ENCLOSED I NWW* Of »«"HWW HCNlTwiH UWt««« OUti«» i j j j j Muwti. HkutoM. T H I S D R A W IN G C O V E R S A P R O P R IE T A R Y ITEM 'A N D I S T H E P R O P E R T Y O P M IC R O S W I T C H . A D IV IS IO N O F

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. kPD COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS 16 P LTR DESCRIPTION A POLYESTER, PBT, BLACK, 2\ POLYMETHYLPENTENE 3\ ZINC 4\ PHOSPHOR PER DWN

MIL-M-24519

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 16 AJ LTR DESCRIPTION A POLYESTER, 2\ BLACK, POLYMETHYLPENTENE ZINC D PBT, PER PER GENERAL PHOSPHOR È\ BRASS

TB-17

Abstract: SUR50N025-05P
Contextual Info: SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS

SUD50N024-06P

Abstract: SUD50N024-06P-E3
Contextual Info: SUD50N024-06P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

Contextual Info: C A T A L O G L IS T IN G M ICRO SWITCH FREEPORT ILLINO IS A DIVISION OF FCO. M FG . U S A SWITCH-ENCLOSED HONEYWELL MTG HOLE AND SLO T FOR . 2 5 0 DIA SCREW EXD-Q26-2 HOLE FOR NO. 10 PAN HEAD SCREW 6 5 .2 5 0 ± .0 3 0 COOK 3 .6 6 0 ± .0 3 0 2.750 ± .0 0 8 -

Contextual Info: SiP2214 New Product Vishay Siliconix Dual Output Low Dropout Regulator FEATURES D D D D D D D D APPLICATIONS 2.25-V to 5.5-V Input Voltage Range Two Outputs − 150 mA and 300 mA Low Ground Current Open Drain Driver Output POR Current Limit Thermal Shutdown

SI5475BDC

Contextual Info: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated