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    BUK445

    Abstract: BUK445-200A BUK445-200B
    Contextual Info: bTE D N AMER PHI LIPS/DISCRETE • ^53^31 0G30SbQ fiTT ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    0G30SbD BUK445-200A/B -SOT186 BUK445 -ID/100 BUK445-200A BUK445-200B PDF