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th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

avnet

Abstract: MSP430X15X
Contextual Info: MSP430x15x, MSP430x16x, MSP430x161x MIXED SIGNAL MICROCONTROLLER SLAS368D− OCTOBER 2002− REVISED MARCH 2005 D Low Supply-Voltage Range, 1.8 V . . . 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D D D − Active Mode: 330 µA at 1 MHz, 2.2 V

Contextual Info: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455C − MARCH 2005 − REVISED AUGUST 2005 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA

MX25L1635D

Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Contextual Info: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5

Contextual Info: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each

MX25U4035

Abstract: MX25U8035 PM1394 land pattern for Uson
Contextual Info: MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 1 REV. 1.0, MAR. 09, 2009 MX25U4035 MX25U8035 Contents FEATURES. 5

Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

MSP430

Abstract: cc cg1 100 278
Contextual Info: MSP430FG42x0 MIXED SIGNAL MICROCONTROLLER SLAS556A − JULY 2007 − REVISED AUGUST 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

XC56303PV80

Abstract: pcr1a XC56303PV66 DSP56000 DSP56300 DSP56303 HA10 msc 1697 XC56303GC100 MCE Semiconductor
Contextual Info: MOTOROLA Order this document by: DSP56303/D SEMICONDUCTOR TECHNICAL DATA DSP56303 Advance Information 24-BIT GENERAL PURPOSE DIGITAL SIGNAL PROCESSOR The DSP56303 is a member of the DSP56300 core family of programmable CMOS Digital Signal Processors DSPs . This family uses a high performance, single-clock-cycle-per-instruction

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

Architecture of TMS320C54XX

Abstract: data addressing modes of TMS320C54xx digital TLV2772 STK 3 channel amp STK 5 channel amp STK power amplifier module overview C5402 TLV2272 TLV2544 TLV2548
Contextual Info: Application Report SLAA093A - October 2000 Interfacing the TLV2544/TLV2548 ADC to the TMS320C5402 DSP Lijoy Philipose AAP Data Conversion ABSTRACT This application report presents a hardware and software solution for interfacing the TLV2544/TLV2548 12-bit, 200-ksps, 4/8-channel, low-power, serial analog-to-digital converters to the

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion