0DS00 Search Results
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Bourns Inc ESD0D-S00-GC0006LROTARY ENCODER MECHANICAL 6PPR |
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ESD0D-S00-GC0006L | Tray | 191 | 1 |
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ESD0D-S00-GC0006L | 38 |
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ESD0D-S00-GC0006L | 289 |
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Littelfuse Inc PSR030DS0050ZFUSE SQUARE 50A 700VAC/600VDC |
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PSR030DS0050Z | Box | 3 |
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Vishay Sfernice RLP014R020DS00SFERNICE FIXED RESISTORS |
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RLP014R020DS00 | Bag | 10 |
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Vishay Sfernice RLP02100R0DS00SFERNICE FIXED RESISTORS |
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RLP02100R0DS00 | Bag | 10 |
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Vishay Sfernice RLP021R210DS00SFERNICE FIXED RESISTORS |
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RLP021R210DS00 | Bag | 10 |
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0DS00 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FEATURES • Low-power, high-performance CMOS process • Multiplexed address inputs • 262,144 words x 4-bit organization • Read-Modify-Write capabilities • 120/150 ns access time from RE • CE before RE auto refresh • 60/75 ns access time from CE |
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1024-bit M441024xK-12 20-Pin M441024PK-12 M441024PK-15 M441024HK-12 M441024HK-15 | |
Contextual Info: Data Sheet August 1996 mi c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations • Four 10 Mbits/s Ethernet transceivers and MACs integrated together with separate transmit and receive port FIFOs and a single DMA interface simplity the design of a frame-switching hub. Each |
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ATT1MX10 208-Pin ATT1MX10-SC | |
ATIC 64Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT AIPD29F008AL 8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 1M-WORD BY 8-BIT Description The ^¡PD29F008AL is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory organized as 8,388,608 bits (1,048,576 |
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uPD29F008AL PD29F008AL 40-pin 14157EJ1V 0DS00 PD29F008AL PD29F008AL. PD29F008ALGZ-LJH ATIC 64 | |
Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿XPD29F016L 16M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 2M-WORD BY 8-BIT Description The ^¡PD29F016L is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory organized as 16,777,216 bits (2,097,152 |
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uPD29F016L 16M-BIT PD29F016L 40-pin J1V0DS00 | |
Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 6 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1856 is a switching device which can be driven directly by a 2.5 V power source. |
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uPA1856 D13808EJ1V0DS00 PA1856 13808EJ1V 0DS00 | |
Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems. |
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NE960R5 NE961R500 NE960R500 NE960R575 NE962R575 P14387E | |
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT LCD CONTROLLER/DRIVER WITH ON-CHIP 1/65 DUTY RAM DESCRIPTION The ,uPD16682 is a LCD driver that includes enough RAM capacity to drive full-dot LCD displays. Each chip can drive a full-dot LCD display consisting of up to 132 x 65 dots. |
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uPD16682 S13368E J1V0DS00 | |
Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB, |
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2SC5508 2SC5508-T2 Rn/50 13865E J1V0DS00 0DS00 | |
uss-620Contextual Info: Advance Data Sheet, Rev. 4 October 1997 microelectronics group Lucent Technologies Bell Labs Innovations USS-620 USB Device Controller with DMA Bridge Features 5 V tolerant I/O buffers allows operation in 3 V or 5 V system environment • Full compliance with the Universal Serial Bus |
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USS-620 100-pin 16-bit DS97-108CMPR-04 uss-620 | |
Direct-Rambus-RIMM
Abstract: MC-4R256CEE6B MC-4R256CEE6C uPD488448
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MC-4R256CEE6B, 4R256CEE6C 256M-BYTE 128M-WORD 16-BIT) 4R256CEE6C uPD488448 600MHz, 800MHz Direct-Rambus-RIMM MC-4R256CEE6B MC-4R256CEE6C | |
ITE 8512
Abstract: jrm A45 RD2 earth leakage relay TN2E-5V T7903FC 2768B tm4101 Aromat tn2e STT 3 SIEMENS T7903
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T7903 poT7903 15-bit SN74LS32) SN74LS04) T7903. CY7C199. SN74LS174 005002b ITE 8512 jrm A45 RD2 earth leakage relay TN2E-5V T7903FC 2768B tm4101 Aromat tn2e STT 3 SIEMENS | |
dis 5261 b
Abstract: f 4556 la 4548 T7630 T7690 T7698 Z915
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T7698 CB119 TR-54016 TR-TSY-000170 TR-TSY-000009 TR-TSY-000499, TR-TSY-000253; 005002b 100-Pin dis 5261 b f 4556 la 4548 T7630 T7690 Z915 | |
WEDSP32CContextual Info: — * Microelectronics WE DSP32C Digital Signal Processor Introduction Description AT&T is the industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted standard in the speech, signal processing, |
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DSP32C DSP32 32bit, DSP32, DS91-051D 005002b WEDSP32C | |
Contextual Info: Data Sheet May 1995 a A T S T ~= ^ ar Microelectronics DSP1618 Digital Signal Processor Features • Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at |
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DSP1618 005002b DSP1618 100-Pin | |
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Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. |
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256K-WORD 16-BIT PD444016L 44-pin | |
Contextual Info: PRELIMINARY DATA SHEET NEC O C M O S FET PS7221A-2A 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7 221 A -2A is a solid state relay con ta in in g G aA s LED s on the light em ittin g sid e (in pu t side) and M O S FETs on the o u tp u t side. |
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PS7221A-2A P14400EJ1V0D | |
Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES |
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2SK3366 2SK3366 O-251 2SK3366-Z O-252 14256EJ1V 0DS00 | |
0829AContextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jUPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ,uPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II). |
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jUPD444004 uPD444004 32-pin PD444004LE-10 PD444004LE-12 0829A | |
Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ ¿¿PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 FEATURES |
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PA1759 PA1759G 13622EJ1V 0DS00 | |
transistor NEC D 586
Abstract: NEC D 586
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NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586 | |
ATT2405
Abstract: ATT2405ABI
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ATT2405ABI DS94-004HVIC DS93-091HVIC) ATT2405 | |
ATT ORCA fpgaContextual Info: Preliminary Data Sheet March 1995 i t A 1 ÏX I " 181, Microelectronics ÄTT1700A Series Serial ROM Features Description • 32K, 64K, and 128K x 1 Serial ROMs for configura tion of ATT3000 and ORCA Series FPGAs The ATT1700A Series Serial ROM family provides |
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TT1700A ATT3000 XC1700' 20-pin current--100 current--10 0DS002b 0D177Sb ATT1736A ATT1736A; ATT ORCA fpga | |
CW025ABK-M
Abstract: lucent DC-DC POWER MODULE CW025ACL-M A1117 kelvin 1102 lucent DC-DC s4 6ca LUCENT ECS
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CW025 CW025Triple-Output-Series MHSTxxx45 MHSLxxx45 5002b CW025ABK-M lucent DC-DC POWER MODULE CW025ACL-M A1117 kelvin 1102 lucent DC-DC s4 6ca LUCENT ECS | |
Contextual Info: Datasheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations JC050H, JC075H, JC100H Power Modules: dc-dc Converters; 18 to 36 Vdc Input, 24 Vdc Output; 50 W to 100 W Features • Small size: 61.0 mm x 57.9 mm x 13.1 mm 2.40 in. x 2.28 in. x 0.52 in. |
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JC050H, JC075H, JC100H JC100H JC100H1 JC100H8 |