0E0000 Search Results

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

MX25L1635D

Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Contextual Info: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5

Contextual Info: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each

MX25U4035

Abstract: MX25U8035 PM1394 land pattern for Uson
Contextual Info: MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 1 REV. 1.0, MAR. 09, 2009 MX25U4035 MX25U8035 Contents FEATURES. 5

Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

M68681

Abstract: 53c90 53c90 NCR MPC505 AN947 MC68681 MPC505EVB NCR SCSI M68MPCBUG M-6868
Contextual Info: Freescale Semiconductor, Inc. CONTENTS CHAPTER 3 FUNCTIONAL DESCRIPTION Freescale Semiconductor, Inc. 3.1 3.2 3.3 INTRODUCTION. 3-1 EVB DESCRIPTION. 3-1

AT25DF081A

Abstract: AT25DF081A-SH AT25DF081A-SSH-T 8715a
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • • • • • • • • • • • • • • • • – Supports SPI Modes 0 and 3 – Supports RapidS Operation – Supports Dual-Input Program and Dual-Output Read

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

MB91F467EA

Contextual Info: MB91460E-DS705-00002-1v3-E.fm Page 1 Wednesday, September 29, 2010 9:47 AM FUJITSU SEMICONDUCTOR DATA SHEET DS705-00002-1v3-E 32-bit Microcontroller CMOS FR60 MB91460E Series MB91F467EA • DESCRIPTION MB91460E series is a line of general-purpose 32-bit RISC microcontrollers designed for embedded control

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

Contextual Info: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

lv8011

Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Contextual Info: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout