0G01 Search Results

Contextual Info: EUPEC blE D • 3 40 32 e!? 0G011b3 5S1 H U P E C TT 60 F, TD 60 F, DT 60 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

KA 2261

Contextual Info: S-M 0 S SYSTEMS INC SbE D • 7^32^0^ 0G01b25 225 H S N O SED1681F 7 ^ r ^ - /J - o 7 CMOS LCD DRIVER • 80 LCD Segment Driver Outputs • Display Duty Cycles Ranging From 1/8 to 1/32 • Expansion Driver The SED1681 is a dot-matrix LCD segment driver for small, high-contrast display panels with duty cycles ranging

oms 450

Abstract: 606C
Contextual Info: 4bflfc>22b 0G01b3fl 30 ^ • IXY □IXYS DSEI 60 Fast Recovery Epitaxial Diode ^FAV t v ' km VRR* Type > ■ 800 1000 DSEI60-08A DSEI 60-10 A i \ * • H - 0 Maximum ratings Sym bol Test conditions 'm e TVJ = T vjm Tc = 606C; rectangular, 6 - 0.5 tp < 10 jis; rep. rating, puise width limited by TVJU

Contextual Info: 2bE D LOGIC DEVICES INC • SSbSTQS 0G0127S 3 ■ T -9 B -Û 7 12-bit Cascadable Multiplier-Accumulator MM • LMS12 DESCRIPTION The LMS12 is a high speed 12 x 12-bit of the dock in the 12-bit A and B input combinatorial multiplier integrated register, respectively. These registers

CI983

Abstract: 1S53 P33PCT374A P33PCT374B PCT374 1374B
Contextual Info: PERFORMANCE SEMICO NDUCTOR 20E & P33PCT374A/B OCTAL D FLIP-FLOPS WITH 3-STATE OUTPUTS Wt 70bSS*ì7 0G0127A 1 • ADVAMCE IMreSäMATOSM T ~ n - o ? - n xh FEATURES 3.3V + 0.2V Power Supply Center Power and Ground Pins 250 MHz Typical Toggle Rate Function, Speed and Drive Compatible with the

Contextual Info: INDUSTRIAL DEVICES I NC bôE D 474133B 0G01E40 SUPER BRITE 5X5mm SQUARE OUTLINE DIMENSIONS .20 ± .007 sq. 5.0 ±0.2 • Square surface for modern appearance • Bright, even illumination • Can be side-stacked • Tinted diffused lens / ALL DIMENSIONS ARE IN INCHES (MM).

Contextual Info: ÛUALITY SEMICONDUCTOR INC bSE J> • 74bfc.ñG3 0G013Ô3 bbD « Ú S I QS3251 Advanced Information High-Speed CMOS QuickSwitch 8:1 Mux / Demux Ô FEATURES/BENEFITS • • • • 5 0 switches connect inputs to outputs Pin compatible to the 74F251, 74FCT251, and

1.2 volt RS-343

Abstract: HDAC97000 330 ohm resistor ALI 3101 C 6ca DIODE
Contextual Info: .SIGNAL PROCESSING 2SE D • SIGNAL PROCESSING TECHNOLOGIES 0 2 ^ 1 7 0G013b7 3 HDAC97000 8-BIT, HIGH SPEED RASTER D/A CONVERTER FEATURES: APPLICATIONS: • 125 M W PS Conversion Rate • PIn-Compatlble with AD9700 with Improved Performance • Color or Monochrome Displays

Contextual Info: n/A-CON SEMICONDnBRLNGTON 11 D S b l4 2 S m 0G0134Û b • MIC / - O 7 ^ -6 7 /M W Zero Bias Detector Diodes Features ■ CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS

J 24C02 SI

Abstract: L24C02 do ic 24C02 free
Contextual Info: ROHM C O R P / E X E L EXEL m MELECS ~ bbE • 702^014 0G01572 RQ7 _ XL24C02 Advance Information 2,048-Bit Serial Electrically Erasable PROM 3 Volt and 5 Volt Operation FEA TU R ES ■ D PIN CONFIGURATIONS Low Power CMOS — Active current le ss than 1mA

20302

Abstract: EB 203 D 0G013M3
Contextual Info: 8 368602 SOLITRON DEVICES SOLITRON DEVICES INC D 61C 01343 INC t.1 SDM SDM SDM SDM 5 AMP FAST SWITCHING T-33-29 B E § a3tat,G2 0G013M3 4 M~~ miTiNpypsvicES SEMICONDUCTOR GROUP L>] r 20301 20302 20303 20304 N PN DARLBNGTON POWER TRANSISTORS Û % ñ p'.ä &

FF100R10KN

Abstract: Eupec fz 1200 r 12 fz 300 r 12 kf2 eupec module igbt FZ200
Contextual Info: EUPEC IGBT m odules b lE 34032^7 0G01345 3Efl D IUPEC Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C, typ. tv¡ A V US US us °C/W °c 150 59 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50 100 3 0,45

Contextual Info: PUR] Y UH J)/ AND; A N » »IV LED Lamps 3flE D B 743275=] 0G01Ô33 T QAND STRIKING BRIGHT _ FEA TU R ES • • • • • • • Striking Bright High brightness for outdoor applications Low drive current Solid state reliability, long life

IC PRICE LIST

Abstract: QQQ1053 343AG
Contextual Info: F D K AMERICA INC 14E D • 343ÔGÔ4 0G0102E 2 THICK FILM HYBRID ICs T-MZ-S 1. Application 2. Circuit circuit diagram and materials & compo­ nents list), power consumption, frequency, and other specifications 3. Test conditions 4. Quality assurance conditions (for environmental

ESJA57-04

Abstract: ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA88-06 ESJA88-08
Contextual Info: CÔLLMER SEM IC ONDUCTOR INC 25E D 52367TB 0G0133S 5 High Voltage Silicon Rectifiers & High Power Rectifier Assemblies Part Number VRRM lo KV (mA) ; VF (V) Trr (jusec) Pkg. L (in) Pkg. Dia. (in) Wire Dia. (in) .256 .256 .394 .394 .394 .472 .472 .472 .591

Contextual Info: SANKEN ELECTRIC CO LTD SSE D 2SG4467 • 7^0741 0G01G04 2fl4 H S A K ü Silicon NPN Triple Diffused Planar ☆Com plem ent to type 2 S A 1 6 9 4 Application Example : • Outline Drawing 2 . M T-100ÍT03P Audio and General Purpose Ta=25°C) Electrical Characteristics

VTT3323LA

Abstract: VTT3324LA VTT3325LA
Contextual Info: SbE D 3G3DbOT .025" NPN Phototransistors 0G01172 14T • VCT VTT3323LA , 4 LA, 5 LA Clear Long T-1 Plastic Package T-41-61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .2 2 < 5.6) .0 6 ( 1 .5 ) .0 2 3 (0 - 5 8 ) .0 1 7 (0 .4 5 ) ■1 6 0 ( 4 .0 6 ) .1 4 0 ( 3 .5 6 )

32S00

Abstract: JE 33
Contextual Info: 3M032R7 blE D EUPEC 0G01252 bfl? • l U P E C DD 105 N Elektrische Eigenschaften Electrical properties M axim um rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tv] = - 40',C . tv| m s* Stoßspitzenspannung non repetitive peak

manual modem QAM HALF DUPLEX

Abstract: RJ11C 20D5 CH1775 INS8250 V130LA10A Modem basic circuit diagram modem circuit echo S161A
Contextual Info: CERMETEK MIC ROELECTRONICS 3ÛE D • 20DSÔ03 0G01105 5 * C E R “ i'"p -7 S -3 CH1775 Modem Module INTRODUCTION FEATURES The Cermetek CH1775 Modem Module offers the design engi­ neer a quick and easy way of integrating a high performance modem into a product. Integration consists of mounting the

0G015

Abstract: X2816BMB
Contextual Info: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa­ rameters are the same as those for normal operation.

1n5190

Contextual Info: SOLID STATE DEVICES INC 1BE D |ñ3bbDll 0G01fll3 7 | _ T - 0 1 - \ £ ' 1N5186 THRU SPD5192 3 AMP FAST RECOVERY RECTIFIER 1 0 0 -1 0 0 0 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396

pj 899 diode

Abstract: pj 899 2sk mosfet DD01 it900
Contextual Info: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S

Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced