1,048,576 16 BIT Search Results

32K 4K x 8 SDRAM

Abstract: SA11
Contextual Info: Preliminary BMC1020101S-AA 16 Mbits 2M x 8-Bit / 1M x 16-Bit Flash Memory + 64 Mbits (1M x 16 Bits x 4 Banks) Synchronous Dynamic RAM DISTINCTIVE CHARACTERISTICS MCP FEATURES • Organization Flash : 2,097,152 x 8 bits/ 1,048,576 x 16 bits SDRAM : 1,048,576 x 4 banks x 16 bits

AIT semicon

Contextual Info: GM71C16163C GM71CS16163CL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 16 B IT C M O S D Y N A M IC R A M Description Features T he G M 71C S 16163C /C L is the new generation d ynam ic RAM o rganized 1,048,576 x 16 bit. • 1,048,576 W ords x 16 B it O rganization

SOJ42-P-400-1

Abstract: MSM5118160F
Contextual Info: FEDD5118160F-01 1Semiconductor MSM5118160F This version: June. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MSM51V18160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD51V18160F-03 1Semiconductor MSM51V18160F This version: May 2001 Previous version : Jan. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version :  Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: HM51W16160A/AL Series Preliminary 1,048,576-word x 16-bit Dynamic Random Access Memory The Hitachi HM51W16160A/AL is a CMOS dynamic RAM organized 1,048,576 words × 16 bits. It employs the most advanced CMOS technology for high performance and low power.

CS8160

Abstract: GM71C18160
Contextual Info: GM71C18160C GM71CS1816ÛCL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C S 18160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 b it GM71C(S) 18160C/CL has realized

GM71V18163CJ-6

Contextual Info: GM71V18163CJ-6E 1,048,576 WORDS x 16 BIT EDO DRAM-ET Part Description Features The GM71V18163CJ-6E is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V18163CJ-6E has realized higher density, higher performance and various functions by utilizing advanced

MSM51V18160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD51V18160F-02 1Semiconductor MSM51V18160F This version: January. 2001 Previous version : Oct. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

MSM51V18160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD51V18160F-01 1Semiconductor MSM51V18160F This version: June. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

MSM5118160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD5118160F-01 1Semiconductor MSM5118160F This version: August. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: NM27LV210 1,048,576-Bit 64K x 16 Low Voltage EPROM SEMICONDUCTOR TM NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM General Description Features The NM27LV210 is a high performance Low Voltage Electrical Programmable read only memory. It is manufactured using

MSM51V16160F

Contextual Info: FEDD51V16160F-01 1Semiconductor MSM51V16160F This version: May 2001 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

GM71V18163CJ-6E

Contextual Info: GM71V18163CJ-6E 1,048,576 WORDS x 16 BIT EDO DRAM-ET Part Description Features The GM71V18163CJ-6E is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V18163CJ-6E has realized higher density, higher performance and various functions by utilizing advanced

Contextual Info: ADE-203-466 Z HN624416 Series 1,048,576-word x 16-bit / 2,097,152-word x 8-bit CMOS Programmable Mask ROM Preliminary |_ | i T n I I A The HN624416 is a 16-Mbit CMOS Programmable Mask ROM organized either as 1,048,576 words by 16 bits or 2,097,152 words by

27C210

Abstract: 27C220 27C240 NM27C210
Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for

MSM51V16165F

Contextual Info: FEDD51V16165F-02 1Semiconductor MSM51V16165F This version: May 2001 Previous version : Nov. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16

MSM5118160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD5118160F-02 1Semiconductor MSM5118160F This version: January. 2001 Previous version : August.2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSM53V1655F_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM53V1655F is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit

Contextual Info: GM71V16163C GM71VS16163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16163C/CL has realized higher density, higher performance and various functions by utilizing

SOJ42-P-400-1

Abstract: MSM5116160F
Contextual Info: FEDD5116160F-02 1Semiconductor MSM5116160F This version: August. 2002 Previous version : Sep.2001 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

GM71V16163C

Contextual Info: GM71V16163C GM71VS16163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16163C/CL has realized higher density, higher performance and various functions by utilizing

GM71C

Abstract: GM71C16163C
Contextual Info: GM71C16163C GM71CS16163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)16163C/CL has realized higher density, higher performance and various functions by utilizing