1 147 212 037 Search Results

0 280 130 085

Abstract: ptc temperature sensor bosch 0 280 130 085 bosch 0 280 130 037 bosch ptc temperature sensor bosch 1 237 000 036 bosch 0 280 130 039 bosch NTC C 280 202 294 A 0 280 212 037 bosch
Contextual Info: ""Ul 44 qi<TO n i ' BOSCH Temperature sensors NTC/PTC temperature sensors Measurement of air temperatures between -4 0 °C and +130 °C • Measurement with tempera­ ture-dependent resistors • Broad temperature range Offer PTC temperature sensor Design: PTC thermistor in waterproof

microsemi die

Contextual Info: MICROSEMI DIE GEOMETRIES FIGURE 4 PLANAR FIGURE 1 FIGURE 2 Double Pad FIGURE 3 k— B— H Top View FIGURE 5 Hexagonal (Top View) (Top View) Square (Anode Top Contact) PLANAR SQUARE DIE SIZE .020 .025 .037 060 .120 .180 .225 .320 A 020 .025 .037 .060 .120

Contextual Info: TERMINALS X-05 10-133-X-01 10-107-X-01 L -*• 0 2 0 -*■ .043 020 036 |»- .010 -.020 J T t =£050 t 047 ♦ 002 .032 = T045]1 r - l _ V 1 RECOMMENDED MOUNTING HOLE .033 DIA #66 DRILL NO. I0 -I3 3 -IA 1 0 -1 3 3 -1 1 0 -1 3 3 -2 1 0 -1 3 3 -3 M A T E R IA L

17CT3

Abstract: 6586F a6W16 ETX 75 EA 250 301cl pn 0 273 003 210 D852 BD 266 S B536 FUS-040
Contextual Info: Table C-2. ASCII/EBCDIC Code Conversion Table Cont. AS C II TO EBCDIC HEX GPH OCT HEX 42 3 302 C2 43 C 303 C3 44 D 304 C4 45 E 305 C5 46 F 306 C6 47 G 307 C7 48 H 310 C8 49 I 311 C9 4A J 321 Ol 4ri K 322 D2 4C L 323 D3 4D M 324 D4 4E N 325 D5 4F O 326 D6

ATF-10735

Abstract: ATF-20135 ATF20135
Contextual Info: AVANTEK INC Ot.E D J A A V A N T E IC •E l\ U M lU h DDGSTbfl 1 | ATF-20135 ATF-10735 2-12 GHz General Purpose Gallium Arsenide FET T-31-25 Avantek micro-X Package Features .085 • High Associated Gain 12.5 dB typical at 4 GHz • Low Bias Vd s =2V, lDs =20 mA

intel 8279

Contextual Info: Frequency Range Chart Millitary Aerospace Electronic Warfare Satcom uplink Telecommunications Airport Search Radar Test & Measurement Datacom Cable TV Mobile Radio Body Scanners 18 GHz Ku 12 GHz X 8 GHz C 4 Ghz S 2 GHz L 1 GHz UHF Broadcast TV LAN K 7/16

Contextual Info: TOSHIBA Oct. 1997 T P M 1 9 1 9 -4 0 -3 1 1 Ta= 25°C 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS CONDITION SYMBOL MIN. TYP. MAX. UNIT 46.0 47.0 — dBm 12.0 13.0 — dB O utput Power at ldB Com pression Point PldB Power G ain a t ldB Com pression Point

Contextual Info: • Type THF Solid Tantalum Capacitors M GENERAL SPECIFICATIONS High R ipple C urrent Low E SR DC Leakage: A t +25°C - S ee T a b le Lim it A t +85°C - 10 x T a b le Lim it A t +125°C - 12.5 x T a ble Lim it O pe ratin g T e m pe ratu re: -55°C to +125°C

12525X

Abstract: 10331X 10-137-X-01 10-214XXX itt 9013 10308x
Contextual Info: TERMINALS 10-107-X-01 10-133-X-01 .0 9 3 - L — ^ -125- pOZO r .0 3 6 -_L-T .i _ N Ir' 047 - 002 .0 32 J R E C O M M E N D E D M O U N T IN G H O L E .0 3 3 D IA # 6 6 D R IL L .0 3 7 1 /6 4 •0 -1 3 3 -1 1 0 -1 3 3 -2 .0 5 3 .0 6 4

Micro-D connectors

Abstract: 10-6P Bendix 22-23 15000 microfarad capacitor BENDIX 12 M35X1 MIL-DTL-83513 high speed f85 bp diode MIL-C-26482 QUADRAX AMPHENOL ARINC 600 CONNECTOR
Contextual Info: Amphenol EMI Filter/Transient Protection Connectors 12-120-13 High Technology Connector Products That Protect Sensitive Circuits • Protection in VHF, UHF, HF and other filter ranges • Tubular Contact Assemblies • Planar Array Assemblies • Diodes, MOV’S, Adapters

ge 130l10

Abstract: GE capacitors 150l20 GE 47Z7 15a h3 fuse sf thermistor 420l40 GE 150L10 GE 100z15 GE 130L20B DIN 13715 2011 576-V100ZA15P
Contextual Info: CIRCUIT PROTECTION Varistors AVX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546, 547 Epcos. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .548, 549

fch 191

Abstract: SIS 648 si 6821 fr 608 ci 4018 CI 4017 6844 619
Contextual Info: S C IE N T IF IC / M IN I-C IR C U IT S 4SE » „ iD b m i plug-in, surface-mount " scc Frequency Mixers I C\ /Cl “7 ' LbVtL / + 7 dBm LO, up to + 1 dBm RF Models T- 7 4 - 0 9 - 0 1 TUF-1 tuf-ism J ^ l computer-automated performance data ~ typical production unit / for data of other models consult factory

PFTV07

Abstract: amphenol 77820 7000 audio JN1034 faraday formula f85 bp diode EMI gaskets for d-sub K932 MIL-DTL-83513 bendix 6 pin
Contextual Info: Table of Contents Description Page Amphenol EMI/EMP Filter Protection Connectors for Protection of Sensitive Circuits . 1 EMI Capabilities . 2, 3

Contextual Info: TOSHIBA Oct. 1997 TPM 1919-40-311 1. R F PERFORM ANCE SPEC IFIC A TIO N S CHARACTERISTICS SYMBOL CONDITION Output Power at ld B Compression Point PldB Power Gain at ldB Compression Point GldB Drain Current Power Added Efficiency V ds= 10V f = 1.9 GHz I ds

amplifier CV 203

Abstract: TRANSISTOR a45
Contextual Info: u u U A45 / SMA45 1 to 4 GHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN 17.5 dB TYP. LOW NOISE 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Outline Drawings A45 Specifications* Characteristic

TPM1919-40

Abstract: SO47 TPM1919-40-311
Contextual Info: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point

Transistor C G 774 6-1

Abstract: C G 774 6-1 1041T060
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

ISC-1812

Contextual Info: Model ISC-1812 Vishay Dale Inductors Surface Mount, Molded, Shielded FEATURES • Molded construction provides superior strength and moisture resistance. • Tape and reel packaging for automatic handling, 2000/reel, EIA 481. • Compatible with vapor phase and infrared reflow soldering.

MM-212-031

Abstract: MA40024 CTM124
Contextual Info: AirBorn Cable to Board Rear Panel Mount .050" 9 thru 100 Contacts Rugged Board Mount MK Rugged Cable MM, MN go §8 80 I8s POSITION #1- RECEPTACLE PLUG SIZE CONTACT ROWS B DIMENSIONS E POTTING WELL MAX A PLUG MAX RCPT MAX C D 9 .775 .334 .400 .390 .565 .957

Contextual Info: • Fully compatible with Quickie Female Connector line with strain relief. • 4-Walled shielding protects pins in unmated condition and prevents misalignment. • Automatic locking and quick eject of latching. • Dual polarization by use of two polarization keys and the Quickie

Contextual Info: • Fully compatible with Quickie Female Connector line with strain relief. • Shielding protects pins in unmated condition. • Automatic locking and quick eject of latching. • Dual polarization by use of two polarization keys and the Quickie Female II.

MS16624

Abstract: MS16625 MS35489 MIL-G-3036 AN931-2-9 ms35489-2 9300 0019 901 704 16 08 55 AN931 AN-931
Contextual Info: MS35489 ELASTIC GROMMETS DIMENSIONS inches MS DASH No. OLD “AN” No. A B D T -1 -2 -3 -134 AN931-2-9 -2-16 -3-9 1/8 1/8 1/8 3/16 11/32 3/4 1 1/4 3/4 1/4 9/16 1 9/16 3/16 3/16 1/4 3/16 -4 -5 -6 -7 -3-5 -3-10 -4-7 -4-12 3/16 3/16 1/4 1/4 7/16 7/8 5/8 1

ne8004 FET

Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY