1 AMP FET SWITCH Search Results
1 AMP FET SWITCH Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCWA1225G |
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High Power Switch / SPDT / WCSP14 |
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TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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BAV99W |
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Switching Diode, 100 V, 0.15 A, USM |
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1 AMP FET SWITCH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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G3VM-61GR1
Abstract: g3vm61gr1
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G3VM-61GR1 G3VM-61GR1 X302-E-1 g3vm61gr1 | |
Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant |
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G3VM-61GR1 G3VM-61GR1 X302-E-1 | |
Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant |
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G3VM-61GR1 G3VM-61GR1 K178-E-01 | |
G3VM-61GR1Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant |
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G3VM-61GR1 G3VM-61GR1 X302-E-1 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M F T 1 N 1 0 E Motorola Preferred Device M EDIUM POW ER TM O S FET 1 AMP 100 VOLTS This advanced E-FET is a TMOS Medium Power MOSFET |
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OT-223 MMFT1N10E | |
Contextual Info: IVC102 B U R R -B R O W N I 1 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION • PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for |
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IVC102 IVC102 | |
Contextual Info: Ordering number : EN 2 3 9 1 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer |
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4237TA 2SK771 | |
2SK303Contextual Info: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and |
OCR Scan |
EN856F 2SK303 2SK303 | |
DS21912
Abstract: MCP1601 MCP1612 MCP1630 charger buck MHz "network interface cards" MCP7384
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MCP1612 MCP1612 DS21924A DS21912 MCP1601 MCP1630 charger buck MHz "network interface cards" MCP7384 | |
K 3264 fet transistor
Abstract: KA 3264 c 3262 K 3264 transistor V1KJ yc 428 transistor LF400
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LH4105/LH4105C LH4105 tl/k/9159â TL/K/9159-8 TL/K/9159-9 Wr-10kà TL/K/9159-11 TL/K/9159-10 K 3264 fet transistor KA 3264 c 3262 K 3264 transistor V1KJ yc 428 transistor LF400 | |
Contextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V |
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Contextual Info: HTMOSTM High Temperature Products Advanced Information HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics |
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et 1102
Abstract: downhole
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downhole
Abstract: HTNFET
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Contextual Info: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics |
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KSK30OBUContextual Info: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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KSK30 KSK30OBU | |
Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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KSK117 | |
KSK30
Abstract: NF05
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KSK30 KSK30 NF05 | |
KSK117Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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KSK117 KSK117 | |
KSK30Contextual Info: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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KSK30 KSK30 | |
downholeContextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V |
OCR Scan |
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Contextual Info: Single-Supply, Low Power, Precision FET Input Quad Buffer AD8244 Data Sheet FEATURES PIN CONFIGURATION IN D 9 OUT D +VS 3 8 –VS OUT B 4 7 OUT C IN B 5 6 IN C 11689-001 10 OUT A 2 Figure 1. 10 TYPICAL MISMATCH BETWEEN ANY TWO CHANNELS IN-AMP 1 1/2 0.1 AD8244 |
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AD8244 AD8244BRMZ AD8244BRMZ-R7 10-Lead RM-10 | |
2SK1069
Abstract: 2SK771
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2SK1069-applied 2SK1069 2SK771 | |
Contextual Info: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1 |
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HA21001MS |