1 R 10E 3C, DIODE Search Results

1 R 10E 3C, diode

Contextual Info: Philips Semiconductors Product specification Octal buffer/tine driver with 5-volt tolerant inputs/outputs 3-State _ vr9d1 » FEATURES DESCRIPTION • 5-Volt tolerant inputs/outputs, for interfacing with 5-volt logic. The 74LVC241A is a high-performance, low-power, low-voltage,

t994i

Contextual Info: Philips Semiconductors Product specification 7a a r t 994i Octal buffer with 30£2 series termination resistors 3-State FEATURES DESCRIPTION • Octal bus interface The 74ABT2241 high-performance BICMOS device combines low static and dynamic power dissipation with high speed and high

1 R 10E 3C, diode

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q

Contextual Info: NATIONAL SEMICOND -CLOGIO 1QE D | bSQllHH ODbTbMa Q | CO <0 O J £ |N a t io n a l Æ !â S e m i c o n d u c t o r 54F/74F968 1 Mbit Dynamic RAM Controller General Description Features The ’F968 is a high performance memory controller, replac­ ing many SSI and MSI devices by grouping several unique

1 R 10E 3C, diode

Contextual Info: Philips Semiconductors Product specification Octal buffer/line driver with 5-volt tolerant inputs/outputs 3-State 74LVC244A 74LVCH244A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC244A/74LVCH244A is a high-performance, low-power,

INMOS G171 G176

Abstract: ims g171 p712c G-176 G176 G176P-50 G176P-40 G176J-40 G171 RS170
Contextual Info: IN M O S ID E CORP J D 4ß02bäa DOOBGET T '^ c P - 3 3 □ | -¿ 7 ^ 31 IMS G176 High performance C M O S colour look-up table m m o Designed to be compatible with IBM P S /21, VGA graphics systems s PCLK- Po —P7 Timing generator Pixel latch & mask - VDD

inmos t212 transputer

Abstract: inmos transputer reference manual series T212 data IMST212 INMOS 0D0341C Inmos T212
Contextual Info: INHOS CORP GOUriOS • 10E D I Chapter 5 4fl05baa 0DD3M0fl fl | j 'T - ¥ 1 - / 7 - S ’ / IMS T212 engineering data 165 INMOS CORP 7- W -/?.&/ IDE D § 4ö0Sböfl 0DD340C1 0 | 166 1 _ Introduction R e s e tA n a ly s e E r r o i"

PM50RHA120

Abstract: Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200
Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM50RHA120 FLAT-BASE TYPE INSULATED PACKAGE PM 50RHA120 • 3 0 5OA, 1200V Current-sense IGBT type inverter • M onolithic gate drive & protection logic • Detection, protection & statusincication circuits fo r over-current, short-circuit,

1 R 10E 3C, diode

Contextual Info: Philips Sem icon d u ctors Prelim inary specification 16-bit transceiver with direction pins; inverting; with 3012 series termination resistors; 3-State FEATURES 74LVC162640A 74LVCH162640A PIN CONFIGURATION 5 volt tolerant inputs/outputs for interfacing with 5V logic

Contextual Info: P hilips S em iconductors P ro du ct specification 16-bit buffer/line driver; 3-State 74LVCH16241 FEATURES PIN CONFIGURATION • Wide supply voltage range of 1.2V to 3.6V • Complies with JEDEC standard no. 8-1A • CMOS low power consumption • MULTIBYTE flow-through standard pin-out architecture

Contextual Info: Technical Data File N um ber CD54/74HC253 CD54/74HCT253 1673 High-Speed CMOS Logic Dual 4-Input Multiplexer -Ü — _5 _ SEL/MUX -L _ - 3— 14 Type Features: • C om m on select inpu ts • Separate output-enable inputs • 3-state ou tputs 2 11 I T " 1SEL/MUX

Contextual Info: Philips Semiconductors Product specification 16-bit bus transceiver with direction pin 3-State FEATURES 74ALVC16245/ 74ALVCH16245 PIN CONFIGURATION • W ide supply voltage range of 1 2V to 3.6V • C om plies w ith JE D E C standard no. 8-1A 48 ] 1ÖE 1D IR rT

Q0142

Abstract: Philips diode 33J NOBA
Contextual Info: Philips Semiconductors Preliminary specification 16-bit transceiver with dual enable 3-State 74ALVCH16623 FEATURES DESCRIPTION • Complies with JEDEC standard no. 8-1A The 74ALVCH16623 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

pj 4d smd diode

Contextual Info: MCP3901 and PIC18F65J90 Energy Meter Reference Design User’s Guide 2012 Microchip Technology Inc. DS51968A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

IMST800

Abstract: IMS T800 T800 transputer inmos transputer inmos T414 T800 IMS T414 inmos transputer reference manual Transputer T414 T800 equivalent
Contextual Info: INMOS CORP IDE D | MfiOBbaa QDQ32fia 5 I DffimoS Chapter 3 T - 4 1 - 1 7 -5 7 • IMS T800 engineering data 45 iNnos T - * ¿ 4 - /? - & corp / ioE d | M a o 2 t,aa □ o o 3 5 a ci m | 46 1 Introduction vcc GND C a p P lu s C a p M in u s R eset A n a ly s e

Contextual Info: LT1Q24 Dual, Matched Picoampere, Microvolt Input Low Noise Op Amp KfVTURCS D C SC R IPTIO fl • Guaranteed Offset Voltage 5QpV Max. ■ Guaranteed Bias Current 25°C 120pAMax. ~55°Cto125°C 700pA Max. 1.5^V/°CMax. ■ Guaranteed Drift ■ LowNoise,0.1Hzto10Hz

Contextual Info: V23818-K305-V10 Small Form Factor Multimode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver w ith VF-45 Volition Connector Prelim inary D im ension s in (m m ) inches dEr-; dEr-; he:-; 0O.3&.O14 i8 ) | a | B(M)|C I ->.0 0 .3 ^ .0 1 4 (8 ) |0 0.10/.004(M)

3101-B

Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Contextual Info: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •

inmos T414

Abstract: IMS T414 Transputer T414 IMST414 T414 inmos transputer reference manual transputer 7FFFFF84 22FC
Contextual Info: INMOS CORP 10E D | 4aG2b0fl 00G33S0 3 1 Ö nm oS C h a p te r 4 T - ^ ? -/7 -5 7 9 IMS T414 engineering data 107 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IN M O S CORP "T-Vf-/7 * £ 7 40 02 1, 68 0 0 0 3 3 5 1 I I s I

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

zener SMD MARK A9

Contextual Info: MCP6L2 and PIC18F66J93 Energy Meter Reference Design  2012-2013 Microchip Technology Inc. DS52088B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

signetics 10116

Abstract: NE5212 Signetics ne5212 NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320
Contextual Info: NE/SA/SE5212 Signetics Transimpedance Amplifier 140MHz Product Specification Linear Products DESCRIPTION FEATURES The NE/SA/SE5212 is a 14ki2 transim­ pedance, wideband, low noise differen­ tial output amplifier, particularly suitable for signal recovery in fiber optic receiv­

3dd 209

Abstract: adb 748 ADB 728 30f 124 F-91018 lm 6561 EB-63 motorola
Contextual Info: MCM6560 MCM6561 MCM6562 § > MOTOROLA MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES (N -C H A N N E L , LO W T H R E S H O L D 8K BINARY ADDRESSABLE READ ONLY MEMORIES T h e M C M 6 5 6 0 is a mask o ro g ra m m a b le 8 1 9 2 -b it s ta tic Read O n ly M e m o ry fa b ric a te d w ith N -C hannel m e ta l gate te c h n o lo g y . A