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collect

Abstract: MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232
Contextual Info: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 P b Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value 50 VCBO

Contextual Info: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 * “G” Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value

MUN5111

Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Contextual Info: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol

6a mun2111

Abstract: MUN2112 MUN2111 transistor mun2111 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Contextual Info: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 2 R2 1 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating

MUN2111

Abstract: MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Contextual Info: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 1 R2 2 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating

50K MARKING SOT23

Contextual Info: MMBTA70LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous

Contextual Info: BCW29/30LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Base Voltage

TW88

Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
Contextual Info: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol

BCW60ALT1

Contextual Info: BCW60LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Collector Current: Ic= 100mA * High Total Power Dissipation:Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃

transistor M7A

Abstract: M7A transistor
Contextual Info: General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage V –5.0 Vdc –100

mdp1403

Abstract: 330 ohm resistor pack MDP1801 MDP1405 MDP1603 MDP18 MDP1401 MDP1601 MDP1605 MDP18-01
Contextual Info: MODELS MDP14, MDP16, MDP18 Thick Film Resistor Networks Dual-ln-Line, Molded 01, 03, 05 Schematics FEATURES • .160“ [4.06] maximum seated height •Reduces total assembly costs • Rugged, molded case construction ■Compatible with automatic inserting equipment

BCW29

Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage

MPS3904

Abstract: 1N916 MMBTA20LT1 MPS390
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage

ATIC 91

Abstract: ATIC 62 MDP1405
Contextual Info: MODELS MDP14 and MDP16 Thick Film Resistor Networks Dual-In-Line, Molded DIP 01, 03, 05 Schematics FEATURES .160" [4.06mm] maximum seated height Reduces total assembly costs Rugged, molded case construction Compatible with automatic inserting equipment Highly stable thick film

2N6258

Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Contextual Info: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN

1N916

Abstract: BCW72LT1 MPS3904
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW72LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage V CBO 50 Vdc Emitter–Base Voltage V EBO

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCX70GLT1 BCX70JLT1 BCX70KLT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage

diode MARKING M16

Abstract: 1N916 BCX70G BCX70GLT1 BCX70J BCX70JLT1 BCX70K BCX70KLT1 MPS3904
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCX70GLT1 BCX70JLT1 BCX70KLT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage

Contextual Info: General Purpose Transistors NPN Silicon BCW72LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage V CBO 50 Vdc Emitter–Base Voltage V EBO 5.0 Vdc IC 100 mAdc 1 2 CASE 318–08, STYLE 6

Contextual Info: General Purpose Transistors PNP Silicon BCW61BLT1 BCW61CLT1 BCW61DLT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 32 Vdc Collector–Base Voltage V CBO – 32 Vdc Emitter–Base Voltage

1N916

Abstract: BCW60A BCW60ALT1 BCW60B BCW60BLT1 BCW60D BCW60DLT1 MPS3904
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW60ALT1 BCW60BLT1 BCW60DLT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 32 Vdc CASE 318–08, STYLE 6

KIA6451P

Abstract: KIA6419 rcd 160 5 120 ohm KIA6419P
Contextual Info: SEMICONDUCTOR KIA6419P/F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT LOW POWER AUDIO AMPLIFIER W L G H D P d T 5 1 4 FEATURES Wide Operating Supply Voltage Range 2-16 volts -Allows Q DIM MILLIMETERS _ 0.2 A 9.6 + _ 0.2 B 6.45 + _ 0.1 D 1.52 + _ 0.1 d

SOT-23 MARKING M101

Abstract: MPS3905 BCW61 BCW61B BCW61BLT1 BCW61C BCW61CLT1 BCW61D BCW61DLT1 SOT M10
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW61BLT1 BCW61CLT1 BCW61DLT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 32 Vdc Collector–Base Voltage V CBO – 32