1.8V SRAM Search Results

Contextual Info: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

Contextual Info: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

Contextual Info: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

PIC16F1503

Contextual Info: PIC16 L F1503 14-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC16LF1503): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

Contextual Info: PIC16 L F1507 20-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC16LF1507): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

PIC12 example pwm

Contextual Info: PIC12 L F1501 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC12LF1501): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

CY7C1305BV18

Abstract: CY7C1307BV18
Contextual Info: CY7C1305BV18 CY7C1307BV18 PRELIMINARY 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305BV18/CY7C1307BV18 are 1.8V Synchronous

QRMM0010

Contextual Info: QRMM0010 QUALIFICATION REPORT M36DR864CB/DB: 64 Mbit x16, Burst Flash Memory and 8 Mbit (x16) SRAM, 1.8V Multiple Memory Product INTRODUCTION The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM components have separate power supplies and grounds and are distinguished by three chip enable inputs.

CY7C1305AV18

Abstract: CY7C1307AV18
Contextual Info: CY7C1305AV18 CY7C1307AV18 PRELIMINARY 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305AV18/CY7C1307AV18 are 1.8V Synchronous

CY7C1305BV18

Abstract: CY7C1307BV18
Contextual Info: CY7C1305BV18 CY7C1307BV18 PRELIMINARY 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305BV18/CY7C1307BV18 are 1.8V Synchronous

CY7C1305AV18

Abstract: CY7C1307AV18
Contextual Info: CY7C1305AV18 CY7C1307AV18 PRELIMINARY 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 1.8V core power supply with HSTL Inputs and Outputs The CY7C1305AV18/CY7C1307AV18 are 1.8V Synchronous

ECHO schematic diagrams

Abstract: IS61NSCS25672 IS61NSCS25672-250B IS61NSCS25672-300B IS61NSCS25672-333B IS61NSCS51236 IS61NSCS51236-250B
Contextual Info: IS61NSCS25672 IS61NSCS51236 ISSI Σ RAM 256K x 72, 512K x 36 ADVANCE INFORMATION JUNE 2001 18Mb Synchronous SRAM Features • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V

Contextual Info: IS61LSCS25672 IS61LSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V

32-PIN

Contextual Info: LINVEX TECHNOLOGY, CORP. LX62VL1001 CMOS SRAM 128K x 8 Bit Very-Low Voltage Operating Static Ram FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 1.8 V to 3.6 V • Fast Access Time LX62VL1001-15 LX62VL1001-70 1.8V : ≤ 80ns 1.8V : ≤ 200ns 3.0V : ≤ 15ns

Contextual Info: MX65U28F64/MX65U64F32 1.8V MXSMIO SERIAL MULTI I/O FLASH MEMORY MCP WITH MULTIPLEXED, BURST MODE, PSEUDO SRAM MX65U28F64 MX65U64F32 DATASHEET P/N:PM1730 REV. 1.0, JUL. 22, 2013 1 MX65U28F64/MX65U64F32 128M-BIT/64M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO

av339

Abstract: ECHO schematic diagrams AO36 IS61LSCS25672-250B IS61LSCS25672-300B
Contextual Info: IS61LSCS25672 IS61LSCS51236 ISSI Σ RAM 256K X 72, 512K X 36 ADVANCE INFORMATION NOVEMBER 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VDD : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VDDQ): 1.8V

IS61NSCS25672

Abstract: av339 ECHO schematic diagrams AO36 IS61NSCS25672-200B IS61NSCS25672-225B IS61NSCS51236
Contextual Info: IS61NSCS25672 IS61NSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V

Contextual Info: STATIC SRAM RAM Random Access Memory 1.8V IndustrialTemp LowVoltage LowPower TSOP LH51V256HT-85SL 256K

MB82DBS04163C

Abstract: MT45W4MW16B Micron 256MB NOR FLASH micron vccp MT45W4MW
Contextual Info: TN-45-16: CellularRAM Replacing Fujitsu 1.8V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

OneNAND

Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

KFW4G16Q2M-DEB5

Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
Contextual Info: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)

samsung "nor flash" sensing

Abstract: 63FBGA KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2