10 A POWER MOSFET Search Results

FDMC8030

Contextual Info: FDMC8030 Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 mΩ Features General Description „ Max rDS on = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

Contextual Info: FDMC8030 Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 mΩ Features General Description „ Max rDS on = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

Contextual Info: FDMC8030 Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 mΩ Features General Description ̈ Max rDS on = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

K10N06FM

Abstract: sot82fm vnd10n06 SGS-Thomson mosfet ipak
Contextual Info: VND10N06/VND10N06-1 VNP10N06FI/K10N06FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM Vclamp 60 60 60 60 V V V V R DS on 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 • ■ ■ ■ ■ ■ ■ ■

VND10N06

Abstract: VND10N06-1 VNK10N06FM VNP10N06FI SGS-Thomson mosfet ipak
Contextual Info: VND10N06/VND10N06-1 VNP10N06FI/K10N06FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM Vclamp 60 60 60 60 V V V V R DS on 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 • ■ ■ ■ ■ ■ ■ ■

SGS-Thomson mosfet ipak

Contextual Info: VND10N06/VND10N06-1 VNP10N06FI/K10N06FM ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM V cl amp 60 60 60 60 V V V V R DS on 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 • ■ ■ ■ ■ ■

VND10

Abstract: VND10N06 VND10N06-1 VNK10N06FM VNP10N06FI SGS-Thomson mosfet ipak
Contextual Info: VND10N06/VND10N06-1 VNP10N06FI/K10N06FM ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM V cl amp 60 60 60 60 V V V V R DS on 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 • ■ ■ ■ ■ ■

VND10N06-1

Abstract: ncl 039 VND10N06 VNK10N06FM VNP10N06FI
Contextual Info: VND10N06/VND10N06-1 VNP10N06FI/K10N06FM ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM V cl amp 60 60 60 60 V V V V R DS on 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 • ■ ■ ■ ■ ■

Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A

Contextual Info: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe

Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code VDS STL40C30H3LL N-channel RDS(on) max ID 0.021 Ω @ 10 V 10 A

11NM60N

Contextual Info: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A

11NM60N

Abstract: f11nm60n p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
Contextual Info: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A

Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

Contextual Info: STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on max ID Pw STB11NK50Z 500 V < 0.52 Ω 10 A 125 W STP11NK50ZFP 500 V < 0.52 Ω 10 A 30 W STP11NK50Z

w12nk60z

Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

Contextual Info: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION

Contextual Info: FDA8440 N-Channel Logic Level PowerTrench MOSFET 40 V, 100 A, 2.1 mΩ Features Application • RDS on = 1.46 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Power tools • QG(tot) = 345 nC (Typ.) @ VGS = 10 V • Motor drives and Uninterruptible Power Supplies

Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

VNB10N07

Abstract: VNK10N07FM VNP10N07FI VNV10N07
Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

VNB10N07-VNK10N07

Abstract: vnb10n07
Contextual Info: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A

STP10P6F6

Abstract: STD10P6F6 10P6F6 1040 TO-252
Contextual Info: STD10P6F6, STP10P6F6 P-channel 60 V, 0.15 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages Datasheet — preliminary data Features Order codes VDSS RDS on max ID STD10P6F6 60 V 0.18 Ω 10 A STP10P6F6 60 V 0.18 Ω 10 A •

13N95K3

Abstract: STF13N95K3 STP13N95K3 DT313 B2 marking code Zener STW13N95K3
Contextual Info: STP13N95K3, STF13N95K3 STW13N95K3 N-channel 950 V, 0.68 Ω, 10 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw STP13N95K3 950 V < 0.85 Ω 10 A 190 W STF13N95K3 950 V < 0.85 Ω 10 A STW13N95K3 950 V