10 GHZ PIN DIODE Search Results

DSC10ER

Abstract: DSC40S DSC10H DSC20H DSC30S DSC50S DSC50 dsc30 dsc40
Contextual Info: HI G H Wide Bandwidth InGaAs PIN Diodes RE MODEL DSC10ER DSC10H DSC20H DSC30S DSC30 DSC40S DSC40 DSC50S DSC50 ACTIVE AREA DIAMETER 10 10 20 30 30 40 40 50 50 m m m m m m m m m -3 dB BANDWIDTH typ. min. 55 60 GHz 42 45 GHz 32 35 GHz 18 22 GHz 10 11 GHz 14 16 GHz

10 GHz pin diode

Abstract: 60 GHz PIN diode gaas 20 GHz PIN diode PIN diode 12 GHz 60 GHz PIN diode 836 DIODE
Contextual Info: HSCH-9161 GaAs Detector Diode Sensitivity 10 GHz and 30 GHz RL = 10Kohms; Diode mounted in a 2.4mm HP detector package. 30 GHz 10 GHz Pin dBm Vdet (mV) Vdet (mV) -40 0.07 0.07 -30 0.36 0.38 -20 3.2 3.4 -10 28.7 30 -5 71 73 160 163 2 216 219 3 250 253 5 334

1010* diode

Contextual Info: HICRONETICS INC 34E 0000341 D b IÎ1R0 Single Pole Single Throw HIGH BAND 1 GHz to 18.5 GHz PIN Diode •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed •Operates from -55”C to +125°C •Wide bandwidth: 10 MHz to 18.5 GHz

ma4agsw1a

Abstract: J1 diode SN62 PB36 ag2 Microwave PIN diode
Contextual Info: MA4AGSW1A AlGaAs SPST Non-Reflective PIN Diode Switch Features V 1.00 MA4AGSW1A Layout Ultra Broad Bandwidth: 18 GHz to 50 GHz Functional Bandwidth : 10 GHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs

SN62 PB36 ag2

Abstract: sp4t switch die PIN Diode Switch for frequencies up to 10 GHz IRL 1530
Contextual Info: MA4AGSW4 AlGaAs SP4T PIN Diode Switch Features V 1.00 MA4AGSW4 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 1.0 dB Insertion Loss, 32 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation

MA4AGSW3

Abstract: 20 GHz PIN diode SN62 PB36 ag2 SN62 PB36 ag2 gold
Contextual Info: MA4AGSW3 AlGaAs SP3T PIN Diode Switch Features V 1.00 MA4AGSW3 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.8 dB Insertion Loss, 31 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation

MA4AGSW2

Abstract: SN62 PB36 ag2
Contextual Info: MA4AGSW2 AlGaAs SP2T PIN Diode Switch Features V 1.00 MA4AGSW2 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation

92256

Abstract: 44750 7432 truth table 90087
Contextual Info: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs

TUNNEL DIODE

Contextual Info: 10 Bit Programmable 60 dB Attenuator 0.5 GHz to 18.0 GHz 4.5 dB IL 0.06 dB Step 15 dBm P1dB TECHNICAL DATA SHEET PE70A6000 The PE70A6000 is a Non-Reflective 10 Bit Programmable 60 dB Pin Diode Attenuator with Step Resolution as Low as 0.06 dB over the Operating Frequency Range from 0.5 GHz to 18 GHz. The PE70A6000 is offered in a slim line housing measuring

spst switch

Abstract: MA4AGSW900-287T
Contextual Info: MA4AGSW900-287T AIGaAs PIN Diode High Isolation SPST Switch SOT-23 Package Outline Topview Features n n n n V 1.00 31 dB Isolation @ 0 Volts @ 3 GHz 0.8 dB Loss @ 10 mA @ 3 GHz < 10 nS Switching Speed Useable from 50 MHz to 6.0 GHz GND Description M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST

5965-8882E

Abstract: POWER12 diode ph-150
Contextual Info: That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data Features • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

Contextual Info: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA

M513

Abstract: MASW-000822-12770T S2803
Contextual Info: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA

equivalent 3140

Abstract: a 3140 HP 5082-3140 AN929 hp 3140
Contextual Info: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

Contextual Info: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

antenna wimax 3500

Contextual Info: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA

schematic WELDER

Abstract: als38a PIN Diode Driver Circuit PIN DIODE SPDT DRIVER CIRCUITS
Contextual Info: MA4GP900 Series & GaAs Beam Lead PIN Diodes Features • SUPERIOR HIGH SPEED MICROWAVE SWITCHING DIODE ■ 2-3 NANOSECOND SWITCHING WHEN DRIVEN FROM TTL LOGIC ■ CAPACITANCE AS LOW AS 0.025 pF SPECIFIED AT 10 GHz ■ SERIES RESISTANCE AS LOW AS 2 OHMS SPECIFIED AT 10 GHz

MADL-011023-14150T

Abstract: MADL-011023
Contextual Info: MADL-011023-14150T PIN Diode Limiter 10 MHz - 12 GHz Rev. V2 Features •        Functional Schematic 3 Terminal LPF Broadband Shunt Structure 10 MHz - 12 GHz Broadband Frequency >50 dBm Peak Power Handling >40 dBm CW Power Handling <0.2 dB Insertion Loss

Contextual Info: MADL-011021-14150T PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz Features •       Rev. V1 Functional Schematic 3 Terminal LPF Broadband Shunt Structure 10 MHz - 6 GHz Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 dB Shunt Insertion Loss

TUNNEL DIODE

Contextual Info: 30 dB With 10 Bit Programmable TTL Controlled Attenuator, 2.4mm Female To 2.4mm Female, 0.03 dB Steps From 18 GHz To 40 GHz TECHNICAL DATA SHEET PE70A6001 The PE70A6001 is 10 Bit Programmable 30 dB Pin Diode Attenuator with Step Resolution as Low as 0.03 dB over the

7728A

Abstract: i 7822 7722A 7720A
Contextual Info: Series 77, 10 Bit Digital an d Series '78 360° Phase Shifters & Frequency Translators , Both Series, 77 and 78, comprise a family of eight solid-state PIN diode phase shifters covering the frequency range from 0.5 to 18 GHz in four bands; 0.5 to 2 GHz, 2 to 6 GHz, 4 to 12 GHz and 6 to 18 GHz.

MMIC code D

Abstract: MMIC code 61 J10003 mmic code R mmic code h
Contextual Info: MICRONETICS INC 34E D 61 blll742 Q00034? 7 H M R O Single Pole Four Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) DES6 EH0 f l f f e .Si. j. •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed

j6 diode

Abstract: J1 DIODE J3 diode MA4BN1840-1 J2 diode J4 diode
Contextual Info: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state

Contextual Info: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state