10 K RESISTOR 3 PIN Search Results
10 K RESISTOR 3 PIN Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG80C196KB |
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80C196KB - Microcontroller, 16-bit, MCS-96, 68-pin Pin Grid Array (PGA) |
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PAL16L8B-4MJ/BV |
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PAL16L8B - 20 Pin TTL Programmable Array Logic |
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PAL16L8-7PCS |
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PAL16L8 - 20-Pin TTL Programmable Array Logic |
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54F191/Q2A |
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54F191 - Up/Down Binary Counter with Preset and Ripple Clock. Dual marked as DLA PIN 5962-90582012A. |
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10 K RESISTOR 3 PIN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PEMB1Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages. |
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PEMB11; PUMB11 PEMB11 PUMB11 OT666 OT363 SC-88 PEMH11 PUMH11 AEC-Q101 PEMB1 | |
PEMB1Contextual Info: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages. |
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PEMB11; PUMB11 PEMB11 OT666 OT363 PEMH11 SC-88 PUMH11 PEMB11 PEMB1 | |
Contextual Info: 83B PDTA114EMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA114EMB DFN1006B-3 OT883B) PDTC114EMB AEC-Q101 | |
Contextual Info: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTC114EMB DFN1006B-3 OT883B) PDTA114EMB. AEC-Q101 | |
PDTA123YContextual Info: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number Package |
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PDTA123Y PDTA123YE OT416 SC-75 PDTC123YE PDTA123YK OT346 SC-59A O-236 PDTC123YK | |
t8 smd transistorContextual Info: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTC114EMB DFN1006B-3 OT883B) PDTA114EMB. AEC-Q101 t8 smd transistor | |
Q62702-C2262Contextual Info: PNP Silicon Digital Transistor BCR 183 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 10 kΩ, R2 = 10 kΩ 2 3 1 Type BCR 183 Marking WMs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2262 |
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Q62702-C2262 OT-23 Q62702-C2262 | |
Contextual Info: 83B PDTA114EMB SO T8 PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA114EMB DFN1006B-3 OT883B) PDTC114EMB AEC-Q101 | |
PDTC144VContextual Info: PDTA144V series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement |
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PDTA144V PDTA144VE OT416 SC-75 PDTC144VE PDTA144VK OT346 SC-59A PDTC144VK PDTA144VM PDTC144V | |
PDTA123YE
Abstract: PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SC-101 SC-43A SC-59A SC-75
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PDTA123Y PDTA123YE OT416 SC-75 PDTC123YE PDTA123YK OT346 SC-59A O-236 PDTC123YK PDTA123YE PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SC-101 SC-43A SC-59A SC-75 | |
PDTA144VE
Abstract: PDTA144VK PDTA144VM PDTA144VS PDTA144VT PDTA144VU SC-101 SC-43A SC-59A SC-75
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PDTA144V PDTA144VE OT416 SC-75 PDTC144VE PDTA144VK OT346 SC-59A PDTC144VK PDTA144VM PDTA144VE PDTA144VK PDTA144VM PDTA144VS PDTA144VT PDTA144VU SC-101 SC-43A SC-59A SC-75 | |
Contextual Info: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings |
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BCR533 EHA07184 | |
Contextual Info: BCR583 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings |
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BCR583 EHA07183 | |
Contextual Info: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings |
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BCR533 EHA07184 | |
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PUMD9Contextual Info: PEMB9; PUMB9 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Rev. 3 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages. |
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OT666 OT363 SC-88 AEC-Q101 PUMD9 | |
Contextual Info: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 |
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BCR533 EHA07184 | |
BCR583
Abstract: BCW66 AEC-Q101C
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BCR583 EHA07183 BCR583 BCW66 AEC-Q101C | |
Contextual Info: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23 |
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BCR583 EHA07183 | |
Contextual Info: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23 |
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BCR583 EHA07183 | |
Contextual Info: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 |
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BCR533 EHA07184 | |
BCR533
Abstract: BCW66
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BCR533 EHA07184 BCR533 BCW66 | |
PDTA144
Abstract: PDTC144VMB PDTC144V
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PDTC144VMB DFN1006B-3 OT883B) PDTA144VMB. AEC-Q101 PDTA144 PDTC144VMB PDTC144V | |
PDTC114YMB
Abstract: PDTA114YMB
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PDTA114YMB DFN1006B-3 OT883B) PDTC114YMB. AEC-Q101 PDTC114YMB PDTA114YMB | |
PDTC144VContextual Info: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA144VMB DFN1006B-3 OT883B) PDTC144VMB. AEC-Q101 PDTC144V |