10 M OHM POWER MOSFET Search Results

1E14

Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has

Contextual Info: IRFD9110 Data Sheet Title FD 10 bt A, 0V, 00 m, July 1999 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

RFP22N10

Contextual Info: RFP22N10, RF1S22N10SM Data Sheet Title FP2 10, 1S2 10S bt A, 0V, 80 m, anwer OSTs utho eyrds ter- July 1999 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

Contextual Info: HUF76423P3, HUF76423S3S S e m iconductor March 1999 Advance Information 60V, 0.035 Ohm, 36A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innova­ File Number 4708.1 Features Ultra Low On-Resistance, rnq/nm = 0.030£2, Vfiq=10 V

ld12a

Contextual Info: HUF76409P3, HUF76409S3S S em iconductor December 1998 Advance Inform ation 60V, 0.088 Ohm, 17A, N-Channel, Logic Level UltraFET Power MOSFETs File Number 4666 Features Ultra Low On-Resistance, rn q in m = 0.075S2, Vf i c=10 V ?D S S These N-Channel power MOSFETs

Contextual Info: HUF76413P3, HUF76413S3S Semiconductor March 1999 Advance Inform ation 60V, 0.060 Ohm, 23A, N-Channel, Logic Level UltraFET Power MOSFETs File Number 4723 Features Ultra Low On-Resistance, rn q in m = 0.051 £1, Vf i c=10 V ?D S S These N-Channel power MOSFETs

F1S40N10

Abstract: RFP40N10
Contextual Info: H A R R IS sem iconductor R F G 4 0 N 10, R F P 4 0 N 10, R F 1S 4 0 N 10, R F 1S 4 0 N 10S M 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­

mtp10n35

Abstract: LT 3704
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sistor N-Channel Enhancem ent-M ode Silicon G ate TM O S TM O S POWER FETs 10 AMPERES rDS on = 0.55 OHM 350 and 400 VOLTS These TMOS Power FETs are designed fo r m e d iu m voltage,

Contextual Info: MOTOROLA O rder this docum ent by M TD10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD10N10EL TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM

10N05E

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode D PA K fo r Surface M o u n t or Insertion M ount TM O S POWER FETs 10 AMPERES rDS on = 0.1 OHM 50 VOLTS This advanced " E " series o f TM OS p o w e r MOSFETs is

mtd10n05et

Abstract: MTD10N05E 369A-10 AN569 MOTOROLA N-Channel MOSFET
Contextual Info: MOTOROLA SC XSTPS/R F bflE b3b72Si4 D DGTfl SEH SSS • M O T b M OTOROLA ■ I SEM ICONDUCTOR TECHNICAL DATA M T D 10N 05E Designer's Data Sheet T M O S IV P o w e r Field E ffe c t T ra n s is to r Motorola Preferred Device TMOS POWER FETs 10 AMPERES RDS(on) = 0 1 OHM

76629D

Abstract: TO-251AA
Contextual Info: HUF76629D3, HUF76629D3S in tefsil O c t o b e r 1999 D ata S h e e t 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging m File N u m b e r a & 4 6 9 2 .3 ~ Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance • rDS ON = 0.052Q , V GS = 10 V

TP10N25

Contextual Info: MOTOROLA SC CXSTRS/R F bftE D • b3fc.7ES4 GO' i f l TBl 557 « M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0 « OHM

76443p

Contextual Info: intefsil HUF76443P3, HUF76443S3S D ata S h e e t O c to b e r 1999 F ile N u m b e r 4784 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE • Ultra Low On-Resistance DRAIN ' rDS ON = 0.008£2, V q s = 10 V

221A-06

Abstract: AN569 MTP10N25 TMOS Power FET
Contextual Info: M O T O R O L A SC CX S T R S / R F bflE D • b3fc,7ES4 GO'iflTBl 557 « n O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0.45 OHM

76419s

Abstract: 76419P 29AUA
Contextual Info: HUF76419P3, HUF76419S3S in te fs il D a ta S h e e t A u g u s t 1999 F ile N u m b e r 4 6 6 9 .1 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TQ-220AB JEDEC TO-263AB • Ultra Low On-Resistance ' rDS ON = 0 035Q , VGS = 10 V

01e3

Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
Contextual Info: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models

Contextual Info: International lIORl Da,aSheetN°- pd-i .o22c Rectifier Series PVAZ1 Microelectronic Power IC Relay Single Pole, 1.0A 0-60V AC/DC M O S F E T P H O T O V O L T A IC R E L A Y 10 1« Operations 500 //Sec Turn-On Time 0.5 Ohm On-Resistance 0.2 //Volt Thermal Offset

mtp8n15l

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate L2 TM O S TMOS POWER FET LOGIC LEVEL 10 AMPERES rDS{on = 0-45 OHM 150 VOLTS T h is L o g ic L e v e l T M O S { L 2 T M O S ) P o w e r F E T is d e s ig n e d f o r

MARCON NH capacitor

Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
Contextual Info: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

1200 uF 63V capacitor

Abstract: 1200 uF 63V capacitor 2% SD2921 SD2921-10 VK200 m 404 g
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz . THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES DESCRIPTION

RD70HVF

Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers