10 MARKING SOT23 Search Results

Z02W10V

Contextual Info: SEMICONDUCTOR Z02W10V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 10X No. 1 Item Marking Device Mark 10 Z02W10V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

2N7002 PHILIPS MARKING

Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.

DIN 6784

Abstract: GPS05991 GSO05553 GSO05554 GSO05561 GSO05796 SCT-595 DIN6784 DIN-6784
Contextual Info: Package Outlines All dimensions in mm, unless otherwise specified 0.13 1.6 ±0.1 ax 10˚ m cathode marking 1.2 ±0.1 1 7˚ 0.8 ±0.1 2 0.3 0.6 ±0.1 GPS05991 SCD-80 +0.2 0.9 -0.1 1 2.5 ±0.2 +0.15 acc. to DIN 6784 0 ±0.05 A +0.2 cathode marking 1.7 -0.1 +0.2

Contextual Info: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

Contextual Info: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

Contextual Info: BCR583 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

Contextual Info: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and

Comchip Technology

Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Contextual Info: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand

Q62702-C2262

Contextual Info: PNP Silicon Digital Transistor BCR 183 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 10 kΩ, R2 = 10 kΩ 2 3 1 Type BCR 183 Marking WMs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2262

330 marking diode

Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Contextual Info: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60

d2 SMD TRANSISTORs pnp npn

Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Contextual Info: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100

BCR583

Abstract: BCW66 AEC-Q101C
Contextual Info: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package

CRB 1.0 m

Abstract: CRB SERIES MARKING CODE S03
Contextual Info: CRA/CR Single T Filter Network Specifications: Resistor Tolerance TCR ppm/0C Resistor Power Rating (700C) Capacitor Tolerance Capacitor Voltage rating Operating Temp. Range (0C) +/-10% +/- 200 100mW +/-20% 20 v -55 ~ +150 Marking “CRA” or “ CRB “

BAS16

Abstract: BAS16D
Contextual Info: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6

toko T1

Abstract: TK11817M
Contextual Info: SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit _ 10.Pin Assignment 11.Block Diagram 12.Package Outline Dimensions/Marking

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

25CC

Abstract: G145 TK11819M K1181
Contextual Info: TK11819M SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Package Outline Dimensions/Marking

SMD Code 12W SOT-23

Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED

345M

Abstract: S0T23-5 TK71 TK71345M
Contextual Info: TK71345M SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking

Contextual Info: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking