100 AMP POWER TRANSISTOR Search Results

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

ZTX453

Contextual Info: ZTX452 Not Recommended for New Design Please Use ZTX453 ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain %

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -MARCH 1994 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,„,= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX452 ZTX453 UNIT v CBO 100 120 V VCEO 80 100 V Collector-Base Voltage Collector-Em itter Voltage

2N6284

Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage

Bvn 10k

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FEATURES * * 100 Volt VCE0 Gain of 8k at lc=250mA * lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 100 V Collector-Emitter Voltage

LH0041 equivalent

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)

TIP127 equivalent

Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
Contextual Info: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:

TIP120

Abstract: TIP121 TIP122 TIP125 TIP126 TIP127 TIP127 circuit
Contextual Info: TIP125,126, TIP127 PNP POWER DARLINGTON TRANSISTORS -60 - -100 VOLTS -5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP120, TIP121, TIP122 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features:

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)

Contextual Info: industrial power transistors 135 SILICON NPN TRANSISTORS 15 Amp TYPE NUMBERS RATED BREAKDOWN VOLTAGES 2N 3055 SOT 9201 SOT 9202 SOT 9203 SOT 9204 SOT 9205 SOT 9206 SOT 9207 SOT 9208 SOT 9209 SOT 9210 Vea 100 55 100 120 140 55 80 100 120 140 40 VeE 60 45

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)

transistor 1 j42

Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation

2N3055H

Abstract: 2N3055H+RCA
Contextual Info: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package

UF28156

Abstract: UF2815B L5 mosfet
Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation

pmd10K80

Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB

transistor TT 3043

Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
Contextual Info: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device

BC372

Abstract: ic-250mA CTO-92
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 – SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage

3F TRANSISTOR

Abstract: F2801
Contextual Info: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration

Transistor Equivalent list

Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

25 ohm semirigid

Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
Contextual Info: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l