100 RESISTOR Search Results

Contextual Info: TCR’s for MSI Resistors TEMPERATURE COEFFICIENT OF RESISTANCE RESISTANCE RANGE IN OHMS Type 96 84 66 98 91 10 20 81 56 19 82 93 61 86 5 83 90 87 94 97 80 88 85 89 68 30 28 26 0.1 to < 1 400 300 300 300 100 100 300 100 100 100 100 100 100 100 500 100 100

Contextual Info: TCR’s for MSI Resistors TEMPERATURE COEFFICIENT OF RESISTANCE RESISTANCE RANGE IN OHMS Type 96 84 66 98 91 10 20 81 56 19 82 93 61 86 5 83 90 87 94 97 80 88 85 89 68 30 28 26 0.1 to < 1 400 300 300 300 100 100 300 100 100 100 100 100 100 100 500 100 100

CR1206 vishay

Contextual Info: CR Vishay Techno Thick Film Chip Resistors FEATURES • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL RESISTANCE RANGE Ohms 100 - 500K 100 CR5050 100 - 500K 100 100 - 1M 200 CR3 100 - 1M 250 CR1010 100 - 1M 450 CR1206 100 - 1M 300 CR4

CR1206 vishay

Abstract: CR1206 108D CR2010
Contextual Info: CR Vishay Techno Thick Film Chip Resistors FEATURES • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL RESISTANCE RANGE Ohms 100 - 500K 100 CR5050 100 - 500K 100 100 - 1M 200 CR3 100 - 1M 250 CR1010 100 - 1M 450 CR1206 100 - 1M 300 CR4

CR1206 vishay

Abstract: CR1010
Contextual Info: CR Vishay Techno Thick Film Chip Resistors FEATURES • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS RESISTANCE RANGE Ohms POWER RATING* (mW) CR1 100 - 500K 100 CR5050 100 - 500K 100 CR2 100 - 1M 200 CR3 100 - 1M 250 CR1010 100 - 1M 450 CR1206

Contextual Info: VISHAY MILWAUKEE www.vishay.com Resistive Products Application Note Grid Resistors: Determining Nominal Resistance By Daniel Featherstone SCENARIO The customer wants to dissipate 100 V at a rate of 100 A continuously. 100 V x 100 A = 10 kW 100 V / 100 A = 1 

CR1206 vishay

Abstract: SN62 PB36 ag2 CR0002 vishay cr1206 5050-0002 SN62 PB36 ag2 gold CR1206 CR2010 Sn62Pb36Ag2 CR0003
Contextual Info: CR Vishay Techno Thick Film Chip Resistors FEATURES • Flow solderable • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL RESISTANCE Ω POWER RATING1) (mW) CR0001 100 - 500K 100 CR5050 100 - 500K 100 CR0002 100 - 1M 200 CR0003 100 - 1M

CR1206 vishay

Contextual Info: Model CR Vishay Techno Thick Film Chip Resistors FEATURES • • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS POWER RATING* mW RESISTANCE RANGE (Ohms) MODEL CR1 100 - 500K 100 CR5050 100 - 500K 100 CR2 100 - 1M 200 CR3 100 - 1M 250 CR1010

ERJ3RBD

Abstract: ERJ3EKF panasonic datasheet RM73B2H MCR01MZsF mks4 MCR50EZH RK73K2A SR73H ERJ6BQ RK73K2B
Contextual Info: CROSS REFERENCE - FILM CAPACITORS / RESISTORS Film Capacitors Series/Type ECQV ECQB ECHS Z ECQP(Z) ECQP(U) ECQF Rated Voltage (Vdc) 50 63 100 50 63 100 200 50 100 50 100 200 400 630 200 400 630 100 ECQE(B) ECWF ECWH(V) ECQUL ECQUG ECQUV ECQUN ECQEW ECQUY

PDTC115EE

Abstract: SC-75 MGA893 equivalent transistor k MAM346 marking 08 philips M3D173
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC115EE NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Product specification 2002 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

KRC102

Abstract: KRC110 kra102 m KRC101 KRC101M KRC104 KRC105 KRC106 KRC107 KRC108
Contextual Info: ^ Transistor with Bias Resistors BRT Series Package Polarity SOT-23 R, (KQt R; <KQ) VM ° (m A) KRC101 KRC101M KRC101S 4 7 4 7 50 100 KRC102 KRC102M KRC102S 10 10 50 100 KRC103S 22 22 50 100 KRC104S 47 47 50 100 KRC105 KRC105M KRCI05S 22 47 50 100 KRC106

RFP-100200-4W100-2

Abstract: RFP-050100-2W100-2 RFP-100200-4Z50-2 RFP100200-4
Contextual Info: SURFACE MOUNT RESISTORS & TERMINATIONS PART# CASE VALUE STYLE OHMS RFP-100200-4Y100-2 Y 100 RFP-250250-4Y100-2 Y 100 RFP-250250-6Y100-2 ¥ 100 RFP-250375-4Y100-2 Y 100 RFP-375375-6Y100-2 100 Y RFP-100200-4Z50-2 * Z 50 RFP-250250-4Z50-2 Z 50 RFP-250250-6Z50-2 *

E192

Abstract: E192 RESISTORS 619 305
Contextual Info: EIA Standard Resistance Values - Thin Film Chip Resistors E6 100 150 220 E12 100 120 150 180 220 E24 100 110 120 130 150 160 180 200 220 0.1% (0.5%) (0.1%) (0.5%) E48 100 105 110 115 121 127 133 140 147 154 162 169 178 187 196 205 215 E96 100 102 105 107

PUMH24

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product specification 2003 Oct 16 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

00Power

Abstract: SMK CORPORATION
Contextual Info: PCN RESISTORS Diagram of pulse energy and power derating SMK 10k 1k 100 1k 10 100 1 100k power [W] pulse energy [J] power [W] 10 0.1 1 0.01 0.1 0.01 1 s 0.001 10 s 100 s 1 ms 10 ms pulse width PCN Corporation 100 ms Yokohama Business Office 1s 10 s 100 s PCN RESISTORS

pulse

Abstract: 10K100 s100
Contextual Info: PCN RESISTORS Diagram of pulse energy and power derating BVS power [W] 1M 100k 100k 1k 10k 100 10M 1k 10 100 1 10 0.1 1 1 s 10 s 100 s 1 ms 10 ms pulse width PCN Corporation 100 ms 1s Yokohama Business Office 10 s 100 s power [W] pulse energy [J] 10k PCN RESISTORS

Contextual Info: MICROWAVE CHIP RESISTORS MECHANICAL AND ELECTRICAL DATA vW V SERIES LENGTH WIDTH THICKNESS OHMIC VALUE NiCr OHMIC VALUE Ta2N 110 112 115 118 119 120 121 122 124 .040" .050" .050" .021" .100" .100" .100" .020" .150" .020" .050" .025" .017" .020" .050" .100"

Ta2N

Contextual Info: MICROWAVE CHIP RESISTORS MECHANICAL AND ELECTRICAL DATA w WW SERIES LENGTH WIDTH THICKNESS OHMIC VALUE NiCr OHMIC VALUE Ta2N 110 112 115 118 119 120 121 122 124 .040" .050" .050" .021" .100'' .100" .100" .020" .150" .020" .050" .025" .017" .020" .050" .100"

PDTA115EE

Contextual Info: DISCRETE SEMICONDUCTORS DAT PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

PDTA115EE

Abstract: PDTA115E PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 May 05 2004 Jul 30 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

PDTC115ES

Abstract: PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM PDTC115ET PDTC115EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 Apr 06 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Contextual Info: MN2200 i. HIGH-PERFORMANCE INSTRUMENTATION AMPLIFIER , MICRO NETWORKS DESCRIPTION FEATURES • Internal Gain Setting Resistors tor G=1, 10, 100, 1000 • Excellent Gain Accuracy: ±0.1% G =100 +25°C ±0.16% G =100 +85°C ± 0 .3 % G =100 +125°C • Low Offset Voltage

PDTA115EE

Contextual Info: DISCRETE SEMICONDUCTORS DAT PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 Apr 06 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Contextual Info: BULK ON BOX PACKING Resistor in Poly Bag Q’ty TYPE Q ’TY 12 500 25 200 50 100 100 100 200 100 Dimension mm TYPE W± 3 H+2 L±5 Q ’TY PER BOX 12 75 30 75 1000 25 75 30 150 1000 50 75 65 150 1000 100 130 85 150 1000 200 130 85 150 1000 HIGH MEG. OHM RESISTOR