100-10L XD Search Results

Contextual Info: IW* VITELIC V 5 3 C 4 6 4 FA M ILY H IG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT FA ST PAGE M O D E C M O S D Y N A M IC R A M 7 0 /7 0 L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns

Contextual Info: bSE ]> m o s e l -vi tel ic MOSEL- VITELIC • bBSBBTl DGQnñS V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y T E W R ITE C M O S D Y N A M IC R A M V53C664 P R E L IM IN A R Y 80/80L 10/10L Max. RAS Access Time, tRAn 80 ns 100 ns Max. Column Address Access Time, (tr s 4)

Contextual Info: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)

8L-10L

Contextual Info: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit

Contextual Info: 8,192 WORD X 8 BIT CMOS STATIC RAM Id e s c r i p t i o n I The TC5563APL is a 65,536 bit static random access m emory organized as 8,192 words by 8 bits u sin g CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features w ith a m axim um operating current of 5mA7MHz

Contextual Info: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64AKD -8,-10,-8L,-10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AKD is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight

l64324

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: SONY. CXK58257ATM/AYM -7 5L L/1 -7 0 0L L /8 L /8 5/1 L L0 /1 0 L2 LL /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM D escription C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up

Contextual Info: So n y , CXK58110OTM/YMiïStw&u. 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581 1 0 0 T M /Y M is a IM bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by

Contextual Info: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT

DG417

Abstract: DG418 MAX4655 MAX4656 MAX4658 MAX4655ETA
Contextual Info: 19-1984; Rev 2; 2/04 High-Current, 10Ω, SPST, CMOS Analog Switches Maxim’s MAX4655–MAX4658 are medium-voltage CMOS analog switches with low on-resistance of 10Ω max, specifically designed to handle large switch currents. With a switch capability of up to 400mA peak current and 300mA continuous current MAX4655/

Contextual Info: OL/12L SONY. CXK58267ATM/AYM -70LV85L/1 -70LL/85LL71OLL/12LL 32768-word X 8-bit High Speed C M O S Static RAM D escription C X K 582 67A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996

SKY77733

Abstract: sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435
Contextual Info: Product Selection Guide November 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet

SKY77709

Abstract: SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T
Contextual Info: Product Selection Guide June 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet

Contextual Info: TO SH IBA 2SK2882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tz-M O S V 2SK2882 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source On Resistance : Rd S (ON) = 0.08 il (Typ.)

bourns torque angle sensor

Abstract: 4116r resistor pack H 7555 4116R chassis level sensor c650 diode ptc fuel level sensor bourns fuel card BOURNS MF-LSMF PROTE TUBE
Contextual Info: Bourns Product Profile Automotive Sensors Circuit Protection Solutions Magnetics Products Microelectronic Modules Precision Potentiometers Panel Controls & Encoders Resistive Products Bourns® Product Profile Table of Contents Components Trimpot® Trimming

4116r resistor pack

Abstract: bourns fuel card chip resistors bourns bourns torque angle sensor 0201-size Battery chargers for portable dvd china rs485 fuel level sensor "steering Angle Sensor" chassis PT90 bourns 3549
Contextual Info: Bourns Product Profile Automotive Sensors Circuit Protection Solutions Magnetics Products Microelectronic Modules Precision Potentiometers Panel Controls & Encoders Resistive Products Bourns® Product Profile Table of Contents Components Trimpot® Trimming

iC4013BP

Contextual Info: TC4013BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC IC4013BP/TC4013BF DUAL D-TYPE FLIP FLOP T C 4 0 1 3 B P / B F contains two independent circuits of D type flip-flop. The input level applie'd to D A TA input are transferred to Q and Q" output by r is­

Contextual Info: MOSEL- VITELIC PRELIMINARY V104J232, V104J236 512K x 32, 512K x 36 SIMM Features Description m 524,288 x 32 bit or 524, 288 x 36 bit The V 104J232 Memory Module is organized as 52 4 ,2 8 8 x 32 bits in a 72-lead single-in-line module. The 51 2K x 32 memory module uses 16 MoselVitelic 256K x 4 DRAMs. The V104J236 is organized

MAJORITY LOGIC

Abstract: dual 5-Input Majority Logic Gate TC4530BP TC45 Dual 5 input majority logic gate
Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4530BP TC4530BP DUAL 5-INPUT MAJORITY LOGIC GATE The TC45 30BP i s g ate. dual 5 -in p u t m a jo rity Each m a j o r i t y not th e in p u t a t le v e l. lo g ic g ate "H " l e v e l i s T he p o l a r i t y

TC5563APL-12

Contextual Info: 8,192 WORD X 8 BIT CMOS STATIC RAM [DESCRIPTION The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz

Contextual Info: SDRAM Rev.1.0 May '98 64M bit Synchronous DRAM MITSUBISHI LSls M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 1048576-WORD x 16-BIT)

6V400

Abstract: LR7L
Contextual Info: Preliminary CMOS SRAM KM616V4000C, KM616U4000C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.1 History Draft Date Remark Initial draft January 1 3 ,1998 Advance June 12, 1998 Preliminary Revised