100-20 DIODE Search Results

ML309

Contextual Info: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens

DO-213AA

Abstract: SGL1-100 SGL1-20 SGL1-30 SGL1-40 SGL1-50 SGL1-60 SGL1-90
Contextual Info: SGL1-20 . SGL1-100 SGL1-20 . SGL1-100 Surface Mount Schottky Rectifier Diodes Schottky-Gleichrichterdioden für die Oberflächenmontage Version 2006-04-20 0.4 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.100 V Plastic case Kunststoffgehäuse

30HFU400

Contextual Info: Fast Recovery Diodes International IQR Rectifier Discrete DO-2Q3AB DO-5 IRD3899 50 20 100 240 250 1.65 0.60 350 2 3 4 5 6 [RD3900 100 20 100 240 250 1.65 0.60 350 2 3 4 5 6 20092 IRD3901 200 20 100 240 250 1.65 0.60 350 2 3 4 5 6 20092 IRD3902 300 20 100

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

DO-213AA

Abstract: SGL34-100 SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 SGL34-90
Contextual Info: SGL34-20 . SGL34-100 SGL34-20 . SGL34-100 Surface Mount Schottky Rectifier Diodes Schottky-Gleichrichterdioden für die Oberflächenmontage Version 2011-10-10 0.4 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.100 V Plastic case

DO-213AA

Abstract: SGL34-100 SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 SGL34-90
Contextual Info: SGL34-20 . SGL34-100 SGL34-20 . SGL34-100 Surface Mount Schottky Rectifier Diodes Schottky-Gleichrichterdioden für die Oberflächenmontage Version 2006-04-24 0.4 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.100 V Plastic case

the light activated scr

Abstract: H11B255 photo interrupter module h13a1 GE SCR 1000 H11C1 H11C2 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVceo (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100

photo interrupter module h13a1

Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100

L303A

Abstract: OL303A100
Contextual Info: O K I SEMICONDUCTOR GROUP 53E D b?24240 0 0 0 ? m 5 T -4 1 -0 7 1,3/im High Power Laser Diode t OL301A-20, QL303A-20, OL301A-100, OL303A-100 • DESCRIPTION OKI OL301A-20, OL303A-20, OL301A-100 and OL303A-100 are 1.3jum InGaAsP/lnP high power laser diodes developed as light sources for fiber-optic communications and optical equipment.

in4305

Abstract: diode 1n4305 1n4148 D035 1N4532 JANTX 1N916 1N4148 1N4149 1N4151 1N4152 1N914
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

DE113 silicon diode

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

in4727

Abstract: 6RW51 pico amp meter 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

FMB-G16L

Abstract: FMB-2206 FMB-2306 FMB-26 FMB-26L FMB-36 SFPB-56 SFPB-66 SFPB-76 SPB-66S
Contextual Info: Schottky Barrier Diodes Part Number Rth j- Rth (j-c) (°C/W) Mass (g) 100 20 0.072 10 –40 to +150 0.62 0.7 1 SFPB-66 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 SFPB-76 2.0 40 –40 to +150 0.62 2.0 2 20 100 20 0.072 SPB-G56S 5.0 60 –40 to +150

rvb 602

Abstract: RBV-602 FMM26S FMM-26S FMM36S FMM-36S FMM22S rvb 406m RBV-406M FMM34S
Contextual Info: 4-1 Rectifier Diodes 4-1-2 2 Chip Part No. FMM-31S, R FMM-22S, R 4-1-3 VRM IF IFSM V (A) (A) 100 20 120 FM80 2 RBV-401 10 100 TO-220F 1 RBV-601 20 120 FM80 2 RBV-402 10 100 TO-220F 1 RBV-602 20 120 FM80 2 RBV-4102 10 100 TO-220F 1 RBV-404 20 120 FM80 2 RBV-604

OL301A

Abstract: OL301A-100 OL301A-20 OL303A-100 OL303A-20 100-140mA
Contextual Info: O K I SEMI CONDUCTOR GROUP 5 3E D b?24Z40 000?T7fci 2 T-4Ï-07 1,3/im High Power Laser Diode ’ t ' ' . , £vV -I OL301A-20, OL303A-20, OL301A-i00, OL303A-100 flÊ È Ê s M '- î DESCRIPTION OKI OL301A-20, OL303A-20, OL301A-100 and C5L303A-100 are 1.3//m InGaAsP/lnP high power laser

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

MIL-S-19500C

Abstract: IN4444 MIL-S-19500 1N4532 D035 in4445 1N4148 1N4149 IN4305 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N914A 1N914B BV @ 100/1A M in. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77SEC) Package Outline Package O utline Number 100 100 25 30 1.00 10 4 25 20 1.00 20 4 100