100-C12 10 Search Results

SC7461-103

Abstract: K20-K21 SC7461 SC7461-100 SC7461-101 SC7461-104 C1210100 4966 MOS
Contextual Info: SC7461 7461 SC7461 CMOS 32 13 SC7461 3 24 * CMOS * * 32+3 * * * * * SC7461 64 SOP-24-375-1.27 * * DVD VCD * * ROM SC7461-100 SOP-24-375-1.27 C6~C12=1000000 SC7461-101 SOP-24-375-1.27 C6~C12=0000000 SC7461-103 SOP-24-375-1.27 C6~C12=0010000 SC7461-104 SOP-24-375-1.27

EDGE-CON-100

Abstract: DC1369A R4801 LT1763CDE 65c52 PCF8574T D1011 8ac22 FIN1108 D1213
Contextual Info: 5 4 3 L1 EXT REF C17 VOUT R39 24.9 1% T2 MABAES0060 R17 D 100 U3 FIN1108 0.01uF C13 C10 8.2pF 8.2pF C12 C7 R40 24.9 1% 0.1uF ENABLE R16 100 1 0.01uF R18 100 1uF C23 R19 100 1uF VDD 4 7 VDD 32 31 D10_11- 34 33 D10_11+ D12_13- 36 37 35 D12_13+ OF- OF+ 38 D6_7-

Contextual Info: This information is given as an indication. In the continual goal to improve our products, ve reserve the right to make any modifications judged necessary §391 RADI ALL Microwave components 3GHz TECHNICAL DATA SHEET SMC FAILSAFE R5 7 0 C12 100 S.P.D.T.

op627

Abstract: .47uf 2C266 ad840 pn4250 opa27gp
Contextual Info: 2.94K R1 +14V R4 .47uF 1 1K 33uF C2 Q1 2K C3 +15_FE Q2 1uF AD840J Q_AMP_OUT 2A 2B 10 2C Y 6A 100 D1 33uF + 100 1N758A C7 R8 + V- 3 + 33uF .47uF 100 -15_FE - 2 2.2m 1uF_P 8 T2 Y 6 T1 OP627GP U2 R11 7A 7B .47uF -15_FE 6C 7C .47uF C11 4 6 1uF 6B R13 2.8K C12

CY7C68013A-128

Abstract: A10128 CY7C68013A 7910 12NF 47UF 74LVC14A 74LVC541A ETC1-1-13 8C38
Contextual Info: 1 2 3 4 REVISIONS GND DESCRIPTION REV APPROVED DATE C11 GND GND OPT R62 C57 0.1UF OUT1 D R40 25 R42 OPT R61 OPT OPT R66 J3 C5 GND C14 D C59 OUT2 R44 100 0.1UF J5 B1 C6 J1 R45 100 0.1UF J4 R64 C60 0.1UF OUT2B OPT GND ETC1-1-13 A0 3 C12 3.3V_2 4 R41 OPT A1 SEC

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

TG110-AE050N5

Contextual Info: 3 R29 LED5 475 1% B R41 33 2512 R25 LED1 475 1% R37 33 2512 Q4 RQJ0303PGDQALT 18 19 21 S4 R51 110 2 2 JP2 JP1 1 Q3 RQJ0303PGDQALT 1 2 1 2 JP3 2 3 JP4 4 A0 VCC A1 WP S3 2 A2 SCL VSS SDA Q2 RQJ0303PGDQALT R14 3.3k R1 100 1% 2 V+ IHP C12 IHM S12 ICMP C11 IBIAS

TB215

Abstract: bn432402
Contextual Info: 2 1 +28 V C5 10uF R3 3.9k C4 10nF C8 10nF D1 5.6V D2 5.6V P1 10k B C11 10uF L6 D3 5.6V P3 10k P2 10k C23 10uF R10 3.9k C18 10nF R5 1k B L7 L5 L3 R4 150 R8 150 C7 100nF T1 COAX SP201 C3 100nF COAX R6 9.1k C6 10nF R13 100 L4 C12 10nF C9 100nF C13 100nF COAX

capacitor 1000 MF 25v

Abstract: 4.7 MF 50v CAPACITOR TMK316BJ105KL ceramic capacitor 1uf 600v electrolytic capacitor 1uF 600v ceramic capacitor 4.7 mf 50v T1 2A 250V 1uF 250V 0805 capacitor 30 mf of 1000 mf capacitor
Contextual Info: MAX1856 15VIN to -200Vout @0.03A Table 1: BILL OF MATERIALS DESIGNATION C1 QTY 1 C3,C4 2 C6 2 C8 C9 1 1 C10,C13 2 C11 1 C12 1 D2 1 D1, D3 N1 2 1 R2 R3 R4 R5 R6 1 1 1 1 1 R7 R8 R9 R10 R11 R12 T1 JU1 U1 1 1 1 1 1 1 1 1 1 DESCRIPTION 100 mF 250V electrolytic capacitor

HTSS242150

Abstract: HTSS372125 HTSS242125 Hi-Tech Fuses
Contextual Info: Trans-Guard OS Shorty Fuse C A ⁄4-20 threaded hole 1 ⁄2" deep both ends 1 Dimensional Information NOMINAL FUSE VOLTAGE RATING (KV) 8.3 17.2 15.5 23.0 38.0 CURRENT RATING (AMPS) FUSE CAT. NO. 40 HTSS232040 50 65 80 100 125 150 165 200 30 40 50 65 80

Contextual Info: HVF Series • High Voltage, Long Life, Low ESR, Large Capacitance 105 105℃, 3000 hours. NEW ■ Ultra Low ESR, high ripple current capability ■ Applications: DC/DC Converter, Switching Power Supply, LED power etc. HVF ■ RoHS Compliant High voltage, Long life

CD136

Abstract: 015E-10
Contextual Info: Suntan ALUMINUM ELECTROLYTIC CAPACITOR 105℃, LONGLIFE FEATU R E S TS13D CD136 ‧ ‧ ‧ ‧ Load life of 2000 hours at 105℃ Size may be selected High ripple current Used for computers, communication powers Hi-ripple circuit of electric vehicle, electric

Contextual Info: Aluminum Electrolytic Capacitor – JML FEATURES  Load life of 2000 hours at 105℃  Size may be selected  High ripple current  Used for computers, communication powers Hi-ripple circuit of electric vehicle, electric train, general-purpose inverter

Contextual Info: Aluminum Electrolytic Capacitor – JML FEATURES Ø Load life of 2000 hours at 105℃ Ø Size may be selected Ø High ripple current Ø Used for computers, communication powers Hi-ripple circuit of electric vehicle, electric train, general-purpose inverter

040 d10

Abstract: 000E-12 8B10 KMH Series KME Series 470 d10-42
Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Standard screw terminals, 105C KMH @Downsized from KME series @Endurance with ripple current : 105C 2000 hours 105C SME ?SPECIFICATIONS Items Characteristics Category Temperature Range Rated Voltage Range

Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Standard screw terminals, 85C KMH @Endurance with ripple current : 85C 2000 hours 105C SME ?SPECIFICATIONS Items Characteristics Category Temperature Range Rated Voltage Range Capacitance Tolerance Leakage Current

A12C

Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS KMH • Endurance wnh npple current : S5°C 2000 hours 105« ♦SPECIFICATIONS Ite m s C h a ra c te ris tic s Category Temperature Range -4 0 to + 8 5 ^ 10 to 10 0 V * Rated Voltage Range Capacitance Tolerance

Nippon chemicon CE Aluminum Electrolytic Capacitors

Abstract: NIPPON CAPACITORS M5x08
Contextual Info: I J S ohJ la r g e capacitance aluminum electrolytic capacito rs •N e w ly line-uped up to 525Vcfc •L o a d life with ripple current: 105“C 5000 hours 2000 hours for 500Vdc & 525V<fc •H ig h reliability products ♦SPECIFICATIONS Item s C h a ra c te ris tic s

Contextual Info: \ LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS | C H E M rC O H I • D o w n s iz e d fro m K M E s e rie s ice« • E n d u ra n c e w ith rip p le c u r r e n t: 105°C 2 0 0 0 hours SME ♦SPECIFICATIONS Items C h a ra cteristics Categoiy Temperature Range

mosfet Marking Code b3

Abstract: diode c12 marking c12
Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

TSM13N50CI

Contextual Info: TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

N-Channel mosfet 400v

Abstract: S M 685 13A
Contextual Info: TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

1504B

Abstract: QFP60-P-1519-1 MSM64152A MSM64152AL MSM64P155 QFP60
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株