1000 CLASS AB POWER AMPLIFIER Search Results

SG9156AC

Contextual Info: GAE GREAT AMERICAN ELECTROINCS SG9156AC Silicon NPN power UHF push-pull transistor SG9156AC is designed for wide band power transmitter equipment 600-1000 Mhz frequency band. Suitable for Class AB high power TV amplifiers bands IV or V . Output Power: Frequency Range:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics:

RAC012-03

Contextual Info: RF100140 - 1000 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations and 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

MRA0510-50H

Contextual Info: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400X425 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES: • Omnigold Metalization System • Diffused Ballast Resistors.

MOTOROLA POWER TRANSISTOR

Abstract: motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers

RF Transistor impedance matching

Abstract: MRA05
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Pow er Transistor M RA0510-50H Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range, • Designed for Class AB Linear Power Amplifiers

Contextual Info: 3.6V 1.1W RF Power Amplifier IC for N-PCS/ISM900 ITT2106BD Applications PRELIMINARY Features Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Class AB Bias 800 to 1000 MHz Operation Single Element Input Match Single Element Output Match

100B102JT50XT

Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
Contextual Info: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio

MRF8P9040N

Abstract: mrf8p ATC100B820JT RO4350B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

MRF8P9040N

Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

motorola sps transistor

Abstract: MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers

transistor j241

Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base

CRCW120610R0JNEA

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base

MRA0510-50H

Contextual Info: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. E FEATURES: B C B C • Omnigold Metalization System • Diffused Ballast Resistors.

Contextual Info: 3.6V 1.2W RF Power Amplifier 1C for N-PCS/ISM900 ITT2104BD Applications PRELIMINARY Features Two-Way Paging Wireless Modems • • • • • • • • Cordless Telephones Telemetry 900 MHz ISM Single Positive Supply Class AB Bias 800 to 1000 MHz Operation

Contextual Info: 3.6V 1.1W RF Power Amplifier IC for N-PCS/ISM90C ITT2106BD Applications PRELIMINARY Features Two-Way Paging • • • • • • • Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Class AB Bias 800 to 1000 MHz Operation Single Element Input Match

itt333104bd

Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications PRELIMINARY Features IS-54/IS-136 Digital AMPS Cellular Telephones • • • • • • Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 £2 Input Impedance

04 ow

Contextual Info: 4.6V 1.0W RF Power Amplifier IC for ISM900 ITT333103BD Applications Features 900 MHz ISM • • • • • • • Cordless Telephones Wireless Modems N-PCS — Class AB Bias 850 to 1000 MHz Operation 50 £2 Input Impedance Simple 2 Element Output Match

Contextual Info: 5.8V 1.2W RF Power Amplifier IC for ISM900 ITT334104BD Applications Features • • • • • • • 900 MHz ISM Cordless Telephones Wireless Modems N-PCS +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND Class AB Bias 850 to 1000 MHz Operation

itt333104bd

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S IS-54
Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications Features IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) • • • • • • Class AB Bias 800 to 1000 MHz Operation 50 Ω Input Impedance Simple 2 Element Output Match

Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match

ITT333104BD

Contextual Info: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match

ITT333105BD

Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Contextual Info: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation